Method of manufacturing inorganic nanotube

• US 7,005,391 B2
• Filed: 06/19/2003
• Issued: 02/28/2006
• Est. Priority Date: 06/19/2002
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Cho, Young-jin, Min, Yo-sep, Lee, Jung-hyun, Choi, Won-bong, Bae, Eun-ju
• Primary Examiner(s): LE, THAO P
• Application Number:
  US10/464,860
• Publication Number:
  US 20050202684A1
• Time in Patent Office: 985 Days
• Field of Search: 438/778
• US Class Current: 438/778
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 2202/08 Aligned nanotubes
• CPC Class Codes: C01B 32/162 characterised by catalysts
• CPC Class Codes: C01G 55/00 Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
• CPC Class Codes: C01P 2004/03 obtained by SEM
• CPC Class Codes: C01P 2004/04 obtained by TEM, STEM, STM or AFM
• CPC Class Codes: C01P 2004/13 Nanotubes
• CPC Class Codes: C01P 2004/64 Nanometer sized, i.e. from 1-100 nanometer
• CPC Class Codes: C30B 25/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
• CPC Class Codes: C30B 29/605 Products containing multiple oriented crystallites, e.g. columnar crystallites
• CPC Class Codes: Y10S 977/893 Deposition in pores, molding, with subsequent removal of mold

Abstract

A method of manufacturing an inorganic nanotube using a carbon nanotube (CNT) as a template, includes preparing a template on which a CNT or a CNT array is formed, forming an inorganic thin film on the CNT by depositing an inorganic material on the template using atomic layer deposition (ALD), and removing the CNT to obtain an inorganic nanotube or an inorganic nanotube array, respectively.

Claims

1. A method of manufacturing an inorganic nanotube, comprising:

preparing a template on which a carbon nanotube (CNT) or a CNT array is formed;

forming a ruthenium (Ru) thin film on the CNT by depositing ruthenium on the template using atomic layer deposition (ALD) at a temperature below 300°

C.; and

removing the CNT to obtain a ruthenium nanotube or ruthenium nanotube array.

2. The method as claimed in claim 1, wherein preparing the template comprises:

forming a porous material layer on a substrate; and

growing a CNT from a pore in the porous material layer.

3. The method as claimed in claim 2, wherein the porous material layer is a porous alumina layer.

4. The method as claimed in claim 2, wherein forming the porous material layer comprises:

forming an aluminum thin film on the substrate; and

oxidizing the aluminum thin film to form a porous alumina layer.

5. The method as claimed in claim 3, wherein forming the porous material layer comprises:

forming an aluminum thin film on the substrate; and

oxidizing the aluminum thin film to form the porous alumina layer.

6. The method as claimed in claim 1, wherein removing the CNT comprises ashing and oxidizing the ruthenium thin film while supplying oxygen or ozone.

7. The method as claimed in claim 2, wherein removing the CNT comprises ashing and oxidizing the ruthenium thin film while supplying oxygen or ozone.

8. The method as claimed in claim 3, wherein removing the CNT comprises ashing and oxidizing the ruthenium thin film while supplying oxygen or ozone.

9. The method as claimed in claim 1, wherein removing the CNT comprises etching using plasma.

10. The method as claimed in claim 2, wherein removing the CNT comprises etching using plasma.

11. The method as claimed in claim 3, wherein removing the CNT comprises etching using plasma.