Gallium-nitride-based compound semiconductor device
First Claim
1. A gallium-nitride-based compound semiconductor device, comprising:
- a substrate;
a GaN-based buffer layer formed on said substrate; and
a GaN-based compound semiconductor layer formed on said GaN-based buffer layer, wherein said GaN-based buffer layer comprises AlxGa1-xN1-yPy (0≦
x≦
1, 0<
y<
0.01).
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Accused Products
Abstract
A GaN-based compound semiconductor device formed by sequentially forming, on a substrate, a GaN-based buffer layer and a GaN-based compound semiconductor layer. AlxGa1-xN1-yPy or AlxGa1-xN1-yAsy (0≦x≦1, 0<y<1) is used as the GaN-based buffer layer. N in AlxGa1-xN is partially substituted by P or As, whereby a buffer layer is grown at a high temperature. Thus, a difference in processing temperature between the process for growing a buffer layer and processes before and after the process is reduced. The GaN-based compound semiconductor layer formed on the buffer layer comprises a GaN-based layer, an n-type clad layer, a light-emitting layer, and a p-type clad layer. A multiple quantum well (MQW) layer formed from GaNP or GaNAs and GaN is inserted between the GaN-based layers, thereby reducing a dislocation density of the GaN-based layers.
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Citations
16 Claims
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1. A gallium-nitride-based compound semiconductor device, comprising:
-
a substrate;
a GaN-based buffer layer formed on said substrate; and
a GaN-based compound semiconductor layer formed on said GaN-based buffer layer, wherein said GaN-based buffer layer comprises AlxGa1-xN1-yPy (0≦
x≦
1, 0<
y<
0.01). - View Dependent Claims (2, 3, 4, 5)
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6. A gallium-nitride-based compound semiconductor device, comprising:
-
a substrate;
a GaN-based buffer layer formed on said substrate; and
a GaN-based compound semiconductor layer formed on said GaN-based buffer layer, wherein said GaN-based buffer layer comprises AlxGa1-xN1-yAsy (0≦
x≦
1, 0<
y<
0.01). - View Dependent Claims (7, 8, 9, 10)
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11. A gallium-nitride-based compound semiconductor device, comprising:
-
a substrate;
a GaN-based buffer layer formed on said substrate;
a first GaN-based layer formed on said GaN-based buffer layer;
a multiple quantum well (MQW) layer formed on said first GaN-based layer by alternately stacking plurality of GaN1-yPy (0.0001<
y<
0.005) layers with a plurality of GaN layers; and
a second GaN-based layer formed on said MQW layer. - View Dependent Claims (12)
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13. A gallium-nitride-based compound semiconductor device comprising:
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a substrate;
a GaN-based buffer layer formed on said substrate;
a first GaN-based layer formed on said GaN-based buffer layer;
a multiple quantum well (MQW) layer formed on said first GaN-based layer by alternately stacking a plurality of GaN1-yPy (0<
y<
1) layers with a plurality of GaN layers;
a second GaN-based layer formed on said MQW layer;
a GaN-based clad layer of a first conductivity type formed on said second GaN-based layer;
a GaN-based light-emitting layer formed on said GaN-based clad layer of the first conductivity type; and
a second GaN-based clad layer of a second conductivity type formed on said light-emitting layer.
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14. A gallium-nitride-based compound semiconductor device, comprising:
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a substrate;
a GaN-based buffer layer formed on said substrate;
a first GaN-based layer formed on said GaN-based buffer layer;
a multiple quantum well (MQW) layer formed on said first GaN-based layer by alternately stacking a plurality of GaN1-yAsy (0.0001<
y<
0.005) layers with a plurality of GaN layers; and
a second GaN-based layer formed on said MQW layer. - View Dependent Claims (15)
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16. A gallium-nitride-based compound semiconductor device comprising:
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a substrate;
a GaN-based buffer layer formed on said substrate;
a first GaN-based layer formed on said GaN-based buffer layer;
a multiple quantum well (MQW) layer formed on said first GaN-based layer by alternately stacking a plurality of GaN1-yAsy (0<
y<
1) layers with a plurality of GaN layers;
a second GaN-based layer formed on said MQW layer;
a GaN-based clad layer of a first conductivity type formed on said second GaN-based layer;
a GaN-based light-emitting layer formed on said GaN-based clad layer of the first conductivity type; and
a second GaN-based clad layer of a second conductivity type formed on said light-emitting layer.
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Specification