Dual axis magnetic sensor

• US 7,005,958 B2
• Filed: 06/14/2002
• Issued: 02/28/2006
• Est. Priority Date: 06/14/2002
• Status: Expired due to Fees

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Wan, Hong
• Primary Examiner(s): Easthom, Karl D.
• Application Number:
  US10/171,884
• Publication Number:
  US 20030231098A1
• Time in Patent Office: 1,355 Days
• Field of Search: 338/32.R, 324/252
• US Class Current: 338/32.00R
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00

Abstract

A two-axis magnetic field sensor includes a substrate, a first sensor having at least one magnetoresistive element formed of GMR material on the substrate has a free layer having an easy axis of effective anisotropy field in a first direction. The first sensor is sensitive to magnetic field components perpendicular to the first direction. A current is caused to flow through the first sensor and variations in the resistivity of the first sensor due to the first magnetic field components are sensed. A second sensor having at least one magnetoresistive element formed of GMR material on the substrate has a free layer having an easy axis of effective anisotropy field in a direction substantially perpendicular to the first direction. The second sensor is sensitive to second magnetic field components perpendicular to its easy axis of effective anisotropy. A current is caused to flow through the second sensor and variations in the resistivity of the second sensor due to second magnetic field components are sensed.

Claims

1. A magnetic field sensing device comprising:

a first sensor and a second sensor formed in a common plane on a single semiconductor substrate;

said first sensor having a first bridge arrangement comprising GMR material formed on said substrate, said GMR material having a free layer having a crystal anisotropy field and having an easy axis of effective anisotropy field in a first direction, said first sensor being sensitive to first magnetic field components perpendicular to said first direction;

means for producing a current flow through said first sensor and sensing variations in the resistivity of said first sensor due to said first magnetic field components with an output of said first bridge arrangement representing said first magnetic field components;

said second sensor having a second bridge arrangement comprising said GMR material formed on said substrate, said GMR material having a free layer having said crystal anisotropy field and having an easy axis of effective anisotropy field in a second direction substantially perpendicular to said first direction, said second sensor being sensitive to second magnetic field components perpendicular to a sensitive direction of said first sensor,

means for producing a current flow through said second sensor and sensing variations in the resistivity of said second sensor due to said second magnetic field components with an output of said second bridge arrangement representing said second magnetic field components.

2. The magnetic field sensing device of claim 1 wherein said free layer of said first sensor has a crystal anisotropic easy axis, a shape anisotropic field, and a shape anisotropic easy axis, with said shape anisotropic field being dominant and said first sensor is constructed with said shape anisotropic easy axis rotated in a clockwise direction away from said crystal anisotropic easy axis direction;

and

said free layer of said second sensor has said crystal anisotropic easy axis, a shape anisotropic field and a shape anisotropic easy axis, with said shape anisotropic field being dominant and said sensor is constructed with said shape anisotropic easy axis rotated in a counterclockwise direction away from said crystal anisotropic easy axis direction.

3. The magnetic field sensing device of claim 1 wherein said free layer of said first sensor has a crystal anisotropic easy axis, a shape anisotropic field and a shape anisotropic easy axis, with said shape anisotropic field being dominant and said first sensor is constructed with said shape anisotropic easy axis along said crystal anisotropic easy axis;

and

said free layer of said second sensor has said crystal anisotropic easy axis, a shape anisotropic field and a shape anisotropic easy axis, with said shape anisotropic field being dominant and said second sensor is constructed with said shape anisotropic easy axis substantially perpendicular to said crystal anisotropic easy axis.

4. The magnetic field sensing device of claim 3, wherein said free layer of said first sensor has a width and said free layer of said second sensor has a width that is selected to result in said second sensor having a sensitivity approximately equal to a sensitivity of said first sensor.

5. The magnetic field sensing device of claim 1 wherein said current through said first sensor and said second sensor is in a direction parallel to said substrate.

6. The magnetic field sensing device of claim 1 wherein said current through said first sensor and said second sensor is in a direction substantially perpendicular to said substrate.

17. The magnetic field sensing device of claim 5 wherein said free layer of said first sensor has a width and said free layer of said second sensor has a width that is selected to result in said second sensor having a sensitivity approximately equal to a sensitivity of said first sensor.

18. The magnetic field sensing device of claim 1 wherein said free layer of said first sensor has a direction of magnetization and an adjacent ferromagnetic layer has an opposite direction of magnetization and said directions of magnetization rotate toward said first magnetic field components;

and

said free layer of said second sensor has a direction of magnetization and an adjacent ferromagnetic layer has an opposite direction of magnetization and said directions of magnetization rotate toward said second magnetic field components.

19. The magnetic field sensing device of claim 1 wherein said free layer of said first sensor has a direction of magnetization and an adjacent ferromagnetic layer is pinned in a direction perpendicular to said direction of magnetization and said direction of magnetization of said free layer rotates in response to said first magnetic field components;

said free layer of said second sensor has a direction of magnetization and an adjacent ferromagnetic layer is pinned in a direction perpendicular to said direction of said magnetization of said free layer and said direction of magnetization rotates in response to said second magnetic field components; and

a direction of said current flow through said first sensor and a direction of current flow through said second sensor is in the plane of said first sensor and said second sensor.

20. The magnetic field sensing device of claim 1 wherein said free layer of said first sensor has a direction of magnetization and an adjacent ferromagnetic layer is pinned in a direction perpendicular to said direction of magnetization and said direction of magnetization of said free layer rotates in response to said first magnetic field components;

said free layer of said second sensor has a direction of magnetization and an adjacent ferromagnetic layer is pinned in a direction perpendicular to said direction of said magnetization of said free layer and said direction of magnetization rotates in response to said second magnetic field components; and

a direction of said current flow through said first sensor and a direction of current flow through said second sensor is perpendicular to the plane of said first sensor and said second sensor.

7. A magnetic field sensing device comprising:

a first sensor and a second sensor formed in a common plane on a single semiconductor substrate;

said first sensor formed on said substrate and comprising at least one magnetoresistive element having a first and a second thin film layer of ferromagnetic material separated by a thin film layer of non-magnetic material with said second thin film layer of ferromagnetic material having a crystal anisotropy field and having an easy axis of effective anisotropy field in a first direction, with said first thin film layer having a direction of magnetization and said second thin film layer having a direction of magnetization at zero applied field;

means for producing a current flow through said magnetoresistive element of said first sensor;

means for sensing variations in the resistivity of said magnetoresistive element of said first sensor due to the difference in rotation of said magnetization in said first and said second layers as a function of first magnetic field components being sensed;

said second sensor formed on said substrate and comprising at least one magnetoresistive element having a first and a second thin film layer of ferromagnetic material separated by a thin film layer of non-magnetic material with said second thin film layer of ferromagnetic material having said crystal anisotropy field and having an easy axis of effective anisotropy field in a direction substantially perpendicular to said first direction, with said first thin film layer having a direction of magnetization and said second thin film layer having a direction of magnetization at zero applied field;

means for producing a current flow through said magnetoresistive element of said second sensor; and

means for sensing variations in the resistivity of said magnetoresistive element of said second sensor due to the difference in rotation of said magnetization in said first and said second layers as a function of second magnetic field components being sensed wherein said second magnetic field components are perpendicular to said first magnetic field components.

8. The magnetic field sensing device of claim 7 wherein said first thin film layer direction of magnetization and said second thin film layer direction of magnetization of said first sensor are opposite directions at zero applied field and said first thin film layer direction of magnetization and said second thin film layer direction of magnetization rotate toward said first magnetic field components being sensed;

and

wherein said first thin film layer direction of magnetization and said second thin film layer direction of magnetization of said second sensor are opposite directions at zero applied field and said first thin film layer direction of magnetization and said second thin film layer direction of magnetization rotate toward said second magnetic field components being sensed.

9. The magnetic field sensing device of claim 8 wherein said at least one magnetoresistive element of said first sensor and said second sensor comprise repeated layers of a first and a second thin film layer of ferromagnetic material separated by a thin film layer of non-magnetic material and said non-magnetic material is selected from the group consisting of Cu, Cr, Ag, Zn, Pd and Ti.

10. The magnetic field sensing device of claim 7 wherein said second thin film layer direction of magnetization of said first sensor is substantially perpendicular to said first thin film layer direction of magnetization of said first sensor at zero applied field and only said second thin film layer direction of magnetization rotates in response to said first magnetic field components;

and

wherein said second thin film layer direction of magnetization of said second sensor is substantially perpendicular to said first thin film layer direction of magnetization of said first sensor at zero applied field and only said second thin film layer direction of magnetization rotates in response to said second magnetic field components.

11. The magnetic field sensor of claim 10 further comprising a current carrying conductor for fixing a direction of magnetization in said first thin film layer of said first sensor and said first thin film layer of said second sensor.

12. A magnetic field sensing device comprising:

a first sensor and a second sensor formed in a common plane on a single semiconductor substrate;

said first sensor comprising first, second, third and fourth magnetoresistive elements formed on said substrate and connected in a bridge arrangement having a first output, each of said magnetoresistive elements having a free magnetic layer having a crystal anisotropy field and having an easy axis of effective anisotropy field oriented in a first direction at zero applied magnetic field, a pinned magnetic layer, a spacer of non magnetic material between said free layer and said pinned layer, and a layer of antiferromagnetic material adjacent said pinned layer and pinning said pinned layer in a direction generally perpendicular to said easy axis of effective anisotropy field;

said second sensor comprising fifth, sixth, seventh and eighth magnetoresistive elements formed on said substrate and connected in a bridge arrangement having a second output, each said magnetoresistive elements having a free magnetic layer having said crystal anisotropy field and having an easy axis of effective anisotropy field substantially perpendicular to said first direction at zero applied magnetic field, a pinned ferromagnetic layer, a spacer of non magnetic material between said free layer and said pinned layer and a layer of antiferromagnetic material adjacent said pinned layer and pinning said pinned layer in a direction generally perpendicular to said easy axis of effective anisotropy field;

means for setting a direction of magnetization of said pinned layer of said magnetoresistive elements of said first sensor and of said second sensor so that a first pair of diagonally opposite bridge elements are pinned in one direction and a remaining pair of diagonally opposite bridge elements are pinned in a direction opposite said one direction; and

wherein said first output is representative of first magnetic field components at said first sensor and substantially perpendicular to said first direction and said second output is representative of second magnetic field components at said second sensor and substantially perpendicular to said first magnetic field components.

13. The magnetic field sensing device of claim 12 wherein said means for setting a direction of magnetization comprises a conductor extending over said magnetoresistive elements of said first sensor and said second sensor for conducting a fixing current during fabrication of said device.

14. The magnetic field sensing device of claim 13 wherein said free layer of said first sensor has a crystal anisotropic easy axis, a shape anisotropic field, and a shape anisotropic easy axis, with said shape anisotropic field being dominant and said first sensor is constructed with said shape anisotropic easy axis rotated in a clockwise direction away from said crystal anisotropic easy axis direction;

and

said free layer of said second sensor has said crystal anisotropic easy axis, a shape anisotropic field and a shape anisotropic easy axis, with said shape anisotropic field being dominant and said sensor is constructed with said shape anisotropic easy axis rotated in a counterclockwise direction away from said crystal anisotropic easy axis direction.

15. The magnetic field sensing device of claim 13 wherein said free layer of said first sensor has a crystal anisotropic easy axis, a shape anisotropic field and a shape anisotropic easy axis, with said shape anisotropic field being dominant and said first sensor is constructed with said shape anisotropic easy axis along said crystal anisotropic easy axis;

and

said free layer of said second sensor has said crystal anisotropic easy axis, a shape anisotropic field and a shape anisotropic easy axis, with said shape anisotropic field being dominant and said second sensor is constructed with said shape anisotropic easy axis substantially perpendicular to said crystal anisotropy easy axis.

16. The magnetic field sensing device of claim 15 wherein said first sensor has a first sensitivity and said second sensor has a second sensitivity different from said first sensitivity.