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Semiconductor memory device and method for programming and erasing a memory cell

  • US 7,006,371 B2
  • Filed: 11/25/2003
  • Issued: 02/28/2006
  • Est. Priority Date: 12/04/2002
  • Status: Active Grant
First Claim
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1. A semiconductor memory device comprisinga memory cell having a variable resistive element whose electrical resistance is varied,programming means for programming data into said memory cell using the variation of the electrical resistance of said variable resistive element,programming state detection means for detecting variation in the electrical resistance at the time of programming operation carried out by said programming means, andprogramming control means for stopping the programming operation by said programming means when the electrical resistance is varied to a predetermined reference value.

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