Apparatus for monitoring particles and method of doing the same

• US 7,006,682 B1
• Filed: 09/07/2000
• Issued: 02/28/2006
• Est. Priority Date: 09/09/1999
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Uesugi, Fumihiko, Ito, Natsuko, Moriya, Tsuyoshi
• Primary Examiner(s): Mehta, Bhavesh M.
• Assistant Examiner(s): Seth, Manav
• Application Number:
  US09/656,713
• Time in Patent Office: 2,000 Days
• Field of Search: 382/141, 382/145, 382/190, 382/192, 382/194, 382/205, 382/271, 382/273, 348/86, 348/87, 700/95, 700/108, 700/109, 700/121, 438/16, 356335-337, 356/237.3, 356/237.5
• US Class Current: 382/145
• CPC Class Codes: G01N 15/1433 using image recognition
• CPC Class Codes: G01N 2015/1493 Particle size

Abstract

There is provided an apparatus for monitoring a size of a particle, including (a) a laser beam source which radiates a laser beam to an area in which particles exist, (b) a photodetector which receives the laser beam having been scattered by the particles, and outputs image data including brightness of pixels, (c) an area detector which detects pixels corresponding to an area on which the scattered laser beam is incident, based on the image data, (d) a maximum brightness detector which detects a maximum brightness among brightness of the pixels detected by the area detector, and (e) a measurement unit which compares the maximum brightness to a predetermined threshold brightness to thereby measure a relative size of the particles.

Claims

1. An apparatus for monitoring a size of a particle, comprising:

a laser beam source which radiates a laser beam to an area in which particles exist;

a photodetector which is comprised of a plurality of pixels, which receives said laser beam having been scattered by said particles, and outputs image data including brightness of pixels; and

an area detector which determines as a group only pixels that are simultaneously irradiated by said laser beam scattered by one of said particles, that are located adjacent to each other, and that have a brightness equal to or greater than a predetermined threshold brightness.

2. The apparatus as set forth in claim 1, further comprising:

a maximum brightness detector which detects a maximum brightness among levels of brightness of pixels in said group; and

a measurement unit which compares said maximum brightness to said predetermined threshold brightness to thereby measure a relative size of said particles.

3. The apparatus as set forth in claim 1, further comprising:

a maximum brightness detector which detects a maximum brightness among levels of brightness of pixels in said group; and

a measurement unit which measures an intensity of said scattered laser beam, based on said maximum brightness, and measures a relative size of said particles, based on said intensity of said scattered laser beam, in accordance with an equation which defines a relation between an intensity of a scattered laser beam and a relative size of particles.

4. The apparatus as set forth in claim 3, wherein said particles are generated in fabrication of a semiconductor device, and further comprising a third measurement unit which judges whether a relative size of said particles is greater than a predetermined threshold size in order to judge whether said particles would exert harmful influence on a semiconductor device, and which ceases fabrication of a semiconductor device, if said relative size of said particles has been judged to be greater than said predetermined threshold size.

5. The apparatus as set forth in claim 1, further comprising a scanner which scans said laser beam emitted from said laser beam source.

6. The apparatus as set forth in claim 1, wherein said photodetector includes a charge coupled device camera comprised of a plurality of light-receiving devices arranged in a matrix.

7. The apparatus as set forth in claim 2, further comprising a counter which counts up a number of said groups.

8. The apparatus as set forth in claim 1, further comprising a heater for heating a chamber in which said particle is generated, to remove by-products from said chamber.

9. The apparatus as set forth in claim 1, further comprising:

a counter which counts a number of pixels in said group; and

a measurement unit which compares said number to a predetermined threshold number to thereby measure a relative size of said particles.

10. The apparatus as set forth in claim 1, further comprising a counter which counts up a number of said groups.

11. The apparatus as set forth in claim 9, further comprising a scanner which scans said laser beam emitted from said laser beam source.

12. The apparatus as set forth in claim 9, wherein said photodetector includes a charge coupled device camera comprised of a plurality of light-receiving devices arranged in a matrix.

13. The apparatus as set forth in claim 9, further comprising a counter which counts up a number of said groups.

14. The apparatus as set forth in claim 9, further comprising a heater for heating a chamber in which said particle is generated, to remove by-products from said chamber.

15. The apparatus as set forth in claim 1, further comprising:

a calculator which calculates a total of brightness of pixels in said group; and

a measurement unit which compares said total to a predetermined threshold total to thereby measure a relative size of said particles.

16. The apparatus as set forth in claim 1, further comprising:

a maximum brightness detector which detects a maximum brightness among levels of brightness of pixels in said group;

a counter which counts a number of pixels in said group; and

a measurement unit which compares said maximum brightness or said number to a predetermined threshold brightness or a predetermined threshold number to thereby measure a relative size of said particles.

17. The apparatus as set forth in claim 1, further comprising:

a maximum brightness detector which detects a maximum brightness among levels of brightness of pixels in said group;

a counter which counts a number of pixels in said group;

a calculator which calculates a total of brightness of pixels in said group; and

a measurement unit which uses at least one of said total and said maximum brightness and said number in order to measure a relative size of said particles.

18. The apparatus as set forth in claim 15, further comprising a scanner which scans said laser beam emitted from said laser beam source.

19. The apparatus as set forth in claim 15, wherein said photodetector includes a charge coupled device camera comprised of a plurality of light-receiving devices arranged in a matrix.

20. The apparatus as set forth in claim 15, further comprising a counter which counts up a number of said groups.

21. The apparatus as set forth in claim 15, further comprising a heater for heating a chamber in which said particle is generated, to remove by-products from said chamber.

22. The apparatus as set forth in claim 1, further comprising:

a first measurement unit which measures an intensity of said scattered laser beam, based on brightness of pixels in said group; and

a second measurement unit which measures a relative size of said particles, based on said intensity of said scattered laser beam, in accordance with an equation which defines a relation between an intensity of a scattered laser beam and a relative size of particles.

23. The apparatus as set forth in claim 22, wherein said first measurement unit comprises a maximum brightness detector which detects a maximum brightness among levels of brightness of pixels in said group, and said first measurement unit measures an intensity of said scattered laser beam, based on said maximum brightness.

24. The apparatus as set forth in claim 22, wherein said particles are generated in fabrication of a semiconductor device, and further comprising a third measurement unit which judges whether a relative size of said particles is greater than a predetermined threshold size in order to judge whether said particles would exert harmful influence on a semiconductor device, and which ceases fabrication of a semiconductor device, if said relative size of said particles has been judged to be greater than said predetermined threshold size.

25. The apparatus as set forth in claim 22, further comprising a scanner which scans said laser beam emitted from said laser beam source.

26. The apparatus as set forth in claim 22, wherein said photodetector includes a charge coupled device camera comprised of a plurality of light-receiving devices arranged in a matrix.

27. The apparatus as set forth in claim 22, further comprising a counter which counts up a number of said groups.

28. The apparatus as set forth in claim 22, wherein said second measurement unit includes a memory which stores a software program used for calculating a size of a particle in accordance with the equation of Rayleigh scattering, and a threshold size to which a calculated size is to be compared.

29. The apparatus as set forth in claim 28, wherein said threshold size is equal to or smaller than a minimum diameter among diameters of wirings in a semiconductor device to be fabricated.

30. The apparatus as set forth in claim 22, further comprising a heater for heating a chamber in which said particle is generated, to remove by-products from said chamber.

31. A method of monitoring a size of a particle, comprising:

radiating a laser beam to an area in which particles exist;

receiving said laser beam having been scattered by said particles with a photodetector comprised of a plurality of pixels, and creating image data including brightness of said pixels; and

determining as a group only pixels that are simultaneously irradiated by said laser beam scattered by one of said particles, that are located adjacent to each other, and that have a brightness equal to or greater than a predetermined threshold brightness.

32. The method as set forth in claim 31, further comprising:

detecting a maximum brightness among levels of brightness of pixels in said group; and

comparing said maximum brightness to a predetermined threshold brightness to thereby measure a relative size of said particles.

33. The method as set forth in claim 31, further comprising:

detecting a maximum brightness among levels of brightness of pixels in said group; and

measuring an intensity of said scattered laser beam based on said maximum brightness.

34. The method as set forth in claim 33, wherein said particles are generated in fabrication of a semiconductor device, and further comprising the steps of:

judging whether a relative size of said particles is greater than a predetermined threshold size in order to judge whether said particles would exert harmful influence on a semiconductor device; and

ceasing fabrication of a semiconductor device, if said relative size of said particles has been judged to be greater than said predetermined threshold size.

35. The method as set forth in claim 34, further comprising the step of heating a chamber in which said particles are generated, for removing by-products from said chamber.

36. The method as set forth in claim 31, further comprising the step of scanning said laser beam.

37. The method as set forth in claim 32, further comprising:

counting up a number of said groups.

38. The method as set forth in claim 31, comprising:

counting a number of pixels in said group; and

comparing said number to a predetermined threshold number to thereby measure a relative size of said particles.

39. The method as set forth in claim 38, further comprising the step of scanning said laser beam.

40. The method as set forth in claim 38, further comprising counting up a number of said groups.

41. The method as set forth in claim 31, comprising:

calculating a total of brightness of pixels in said group; and

comparing said total to a predetermined threshold brightness to thereby measure a relative size of said particles.

42. The method as set forth in claim 41, wherein said particles are generated in fabrication of a semiconductor device, and further comprising the steps of:

judging whether said relative size of said particles is greater than a predetermined threshold size in order to judge whether said particles would exert harmful influence on a semiconductor device; and

ceasing fabrication of a semiconductor device, if said relative size of said particles has been judged to be greater than said predetermined threshold size.

43. The method as set forth in claim 41, further comprising the step of heating a chamber in which said particles are generated, for removing by-products from said chamber.

44. The method as set forth in claim 41, further comprising the step of scanning said laser beam.

45. The method as set forth in claim 41, further comprising counting up a number of said groups.

46. The method as set forth in claim 41, further comprising storing a software program used for calculating a size of a particle in accordance with the equation of Rayleigh scattering, and a threshold size to which a calculated size is to be compared.

47. The method as set forth in claim 46, wherein said threshold size is equal to or smaller than a minimum diameter among diameters of wirings in a semiconductor device to be fabricated.

48. The method as set forth in claim 31, comprising:

measuring an intensity of said scattered laser beam, based on brightness of pixels in said group; and

measuring a relative size of said particles, based on said intensity of said scattered laser beam, in accordance with an equation which defines a relation between an intensity of a scattered laser beam and a relative size of particles.

49. The method as set forth in claim 48, wherein said particles are generated in fabrication of a semiconductor device, and further comprising the steps of:

judging whether said relative size of said particles is greater than a predetermined threshold size in order to judge whether said particles would exert harmful influence on a semiconductor device; and

ceasing fabrication of a semiconductor device, if said relative size of said particles has been judged to be greater than said predetermined threshold size.

50. The method as set forth in claim 49, further comprising the step of heating a chamber in which said particles are generated, for removing by-products from said chamber.

51. The method as set forth in claim 48, further comprising the step of scanning said laser beam.

52. The method as set forth in claim 48, further comprising counting up a number of said groups.

53. The method as set forth in claim 48, further comprising the step of storing a software program used for calculating a size of a particle in accordance with the equation of Rayleigh scattering, and a threshold size to which a calculated size is to be compared.

54. The method as set forth in claim 53, wherein said threshold size is equal to or smaller than a minimum diameter among diameters of wirings in a semiconductor device to be fabricated.

55. A recording medium readable by a computer, storing a program therein for causing a computer to act as an apparatus for monitoring a size of a particle, said apparatus comprising:

a laser beam source which radiates a laser beam to an area in which particles exist;

a photodetector which is comprised of a plurality of pixels, wherein said photodetector receives said laser beam having been scattered by said particles, and outputs image data including brightness of pixels; and

an area detector which determines as a group only pixels that are simultaneously irradiated by said laser beam scattered by one of said particles, that are located adjacent to each other, and that have a brightness equal to or greater than a predetermined threshold brightness.

56. The recording medium as set forth in claim 55, wherein said apparatus further comprises:

a maximum brightness detector which detects a maximum brightness among levels of brightness of pixels in said group; and

a measurement unit, which compares said maximum brightness to a predetermined threshold brightness to thereby measure a relative size of said particles.

57. The recording medium as set forth in claim 55, wherein said apparatus further comprises:

a maximum brightness detector which detects a maximum brightness among levels of brightness of pixels in said group; and

a measurement unit which measures an intensity of said scattered laser beam, based on said maximum brightness, and measures a relative size of said particles, based on said intensity of said scattered laser beam, in accordance with an equation which defines a relation between an intensity of a scattered laser beam and a relative size of particles.

58. The recording medium as set forth in claim 55, wherein said particles are generated in fabrication of a semiconductor device, and wherein said apparatus further includes a measurement unit which judges whether a relative size of said particles is greater than a predetermined threshold size in order to judge whether said particles would exert harmful influence on said semiconductor device, and which ceases fabrication of said semiconductor device, if said relative size of said particles has been judged to be greater than said predetermined threshold size.

59. The recording medium as set forth in claim 55, wherein said apparatus further includes a particle counter which counts up each time said particle counter receives a signal from said area detector, and transmits a signal indicative of a count, to a measurement, unit.

60. The recording medium as set forth in claim 55, wherein said apparatus further includes a heater for heating a chamber in which said particle is generated, to remove by-products from said chamber.

61. The recording medium as set forth in claim 55, wherein said apparatus further includes a counter which counts up a number of said groups.

62. The recording medium as set forth in claim 55, wherein said apparatus further includes:

a counter which counts a number of pixels in said group; and

a measurement unit which compares said number to a predetermined threshold number to thereby measure a relative size of said particles.

63. The recording medium as set forth in claim 55, wherein said apparatus further includes a scanner which scans said laser beam emitted from said laser beam source.

64. The recording medium as set forth in claim 55, wherein said photodetector includes a charge coupled device camera comprised of a plurality of light-receiving devices arranged in a matrix.

65. The recording medium as set forth in claim 55, wherein said apparatus further includes:

a calculator which calculates a total of brightness of pixels in said group; and

a measurement unit which compares said total to a predetermined threshold total to thereby measure a relative size of said particles.

66. The recording medium as set forth in claim 55, wherein said apparatus further includes:

a maximum brightness detector which detects a maximum brightness among levels of brightness of pixels in said group;

a counter which counts a number of pixels in said group; and

a measurement unit which compares said maximum brightness or said number to a predetermined threshold brightness, or a predetermined threshold number, to thereby measure a relative size of said particles.

67. The recording medium as set forth in claim 55, wherein said apparatus further includes:

a maximum brightness detector which detects a maximum brightness among levels of brightness of pixels in said group;

a counter which counts a number of pixels in said group;

a calculator which calculates a total of brightness of pixels in said group; and

a measurement unit which uses at least one of said total and said maximum brightness and said number in order to measure a relative size of said particles.

68. The recording medium as set forth in claim 55, wherein said apparatus further includes:

a first measurement unit which measures an intensity of said scattered laser beam, based on brightness of pixels in said group; and

a second measurement unit which measures a relative size of said particles, based on said intensity of said scattered laser beam, in accordance with an equation which defines a relation between an intensity of a scattered laser beam and a relative size of particles.

69. The recording medium as set forth in claim 68, wherein said first measurement unit comprises a maximum brightness detector which detects a maximum brightness among levels of brightness of pixels in said group, and said first measurement unit measures an intensity of said scattered laser beam, based on said maximum brightness.

70. The recording medium as set forth in claim 68, wherein said second measurement unit includes a memory which stores a software program used for calculating a size of a particle in accordance with the equation of Rayleigh scattering, and a threshold size to which a calculated size is to be compared.

71. A recording medium readable by a computer, storing a program therein for causing a computer to carry out a method of monitoring a size of a particle, said method comprising:

radiating a laser beam to an area in which particles exist;

receiving said laser beam having been scattered by said particles; and

determining as a group only pixels that are simultaneously irradiated by said laser beam scattered by one of said particles, that are located adjacent to each other, and that have a brightness equal to or greater than a predetermined threshold brightness.

72. The recording medium as set forth in claim 71, wherein said method further includes:

detecting a maximum brightness among levels of brightness of pixels in said group; and

comparing said maximum brightness to a predetermined threshold brightness to thereby measure a relative size of said particles.

73. The recording medium as set forth in claim 71, wherein said method further includes:

detecting a maximum brightness among levels of brightness of pixels in said group; and

measuring an intensity of said scattered laser beam, based on said maximum brightness.

74. The recording medium as set forth in claim 71, wherein said particles are generated in fabrication of a semiconductor device, and wherein said method further includes:

judging whether a relative size of said particles is greater than a predetermined threshold size in order to judge whether said particles would exert harmful influence on said semiconductor device; and

ceasing fabrication of said semiconductor device, if said relative size of said particles has been judged to be greater than said predetermined threshold size.

75. The recording medium as set forth in claim 74, wherein said method further includes heating a chamber in which said particles are generated, for removing by-products from said chamber.

76. The recording medium as set forth in claim 71, wherein said method further includes counting up a number of said groups.

77. The recording medium as set forth in claim 71, wherein said method further includes:

counting a number of pixels in said group; and

comparing said number to a predetermined threshold number to thereby measure a relative size of said particles.

78. The recording medium as set forth in claim 71, wherein said method further includes scanning said laser beam.

79. The recording medium as set forth in claim 71, wherein said method further includes:

calculating a total of brightness of pixels in said group; and

comparing said total to a predetermined threshold brightness to thereby measure a relative size of said particles.

80. The recording medium as set forth in claim 71, wherein said method further includes storing a software program used for calculating a size of a particle in accordance with the equation of Rayleigh scattering, and a threshold size to which a calculated size is to be compared.

81. The recording medium a set forth in claim 71, wherein said method further includes:

measuring an intensity of said scattered laser beam, based on brightness of pixels in said group; and

measuring a relative size of said particles, based on said intensity of said scattered laser beam, in accordance with an equation which defines a relation between an intensity of a scattered laser beam and a relative size of particles.