High resolution resists for next generation lithographies
First Claim
1. A nanocomposite resist comprising:
- a nanoparticle component; and
a polymer component wherein the nanoparticle component comprises a polyhedral oligosilsesquioxane and the polymer component comprises poly(α
-chloroacrylate-co-α
-methyl styrene).
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Accused Products
Abstract
The present invention provides new high resolution resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite resists comprising nanoparticles in a polymer matrix are provided in this invention. New chemically amplified resists that incorporate inorganic moieties as part of the polymer are presented herein, as are new chemically amplified resists that incorporate photoacid generating groups within the polymeric chain. Novel non-chemically amplified yet photosensitive resists, and new organic-inorganic hybrid resists are also provided herein. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.
43 Citations
75 Claims
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1. A nanocomposite resist comprising:
-
a nanoparticle component; and a polymer component wherein the nanoparticle component comprises a polyhedral oligosilsesquioxane and the polymer component comprises poly(α
-chloroacrylate-co-α
-methyl styrene). - View Dependent Claims (2)
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3. A lithographic process comprising:
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exposing a lithographic recording medium to radiation to form a pattern; and developing the pattern; wherein the lithographic recording medium comprises a nanocomposite resist comprising a nanoparticle component and a polymer component, the nanoparticle component comprising a polyhedral oligosilsesquioxane and the polymer component comprising poly(α
-chloroacrylate-co-α
-methyl styrene). - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A polymeric chemically amplified resist comprising:
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a methacrylate component; a polyhedral oligosilsesquioxane component; and a photoacid generating component; wherein the methacrylate component does not comprise a polyhedral oligosilsesquioxane moiety. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A polymeric chemically amplified resist comprising methyl methacrylate, t-butyl methacrylate, methacrylic acid, and 3-(3,5,7,9,11,13,15-heptacyclopentylpentacyclo-[9.5.1.13,9.15,15.17,13]octasiloxane- 1-yl)propyl methacrylate.
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30. A polymeric chemically amplified resist comprising:
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a methacrylate component; and a polymerizable photoacid generating component; wherein the methacrylate component does not comprise a photoacid generating moiety and the polymerizable photoacid generating component comprises [p-CH2═
C(CH3)C(O)OC6H4SMe2]OSO2CF3. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. A polymeric chemically amplified resist comprising methyl methacrylate, t-butyl methacrylate, methacrylic acid, 3-(3,5,7,9,11,13,15-heptacyclopentylpentacyclo-[9.5.1.13,9.15,15.17,13]octasiloxane-1-yl)propyl methacrylate, and [p-CH2═
- C(CH3)C(O)OC6H4SMe2]OSO2CF3.
- View Dependent Claims (49)
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50. A polymeric lithographic resist comprising a photoacid generating component, wherein the photoacid generating component comprises [p-CH2═
- C(CH3)C(O)OC6H4SMe2]OSO2CF3.
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51. A polymeric resist comprising:
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a polyhedral oligosilsesquioxane disilanol component; and a polyacetal component. - View Dependent Claims (52, 53, 54, 55, 56, 57)
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58. A polymeric chemically amplified resist comprising:
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a methacrylate component; a polymerizable photoacid generating component; and a polyhedral oligosilsesquioxane component. - View Dependent Claims (59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75)
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Specification