Optical device and method of manufacture thereof

• US 7,008,805 B2
• Filed: 12/05/2003
• Issued: 03/07/2006
• Est. Priority Date: 12/10/2002
• Status: Active Grant

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: TriQuint Technology Holding Co (Qorvo, Inc.)
• Inventors: Peticolas, Justin L., Ougazzaden, Abdallah, Ketelsen, Leonard Jan-Peter
• Primary Examiner(s): TRAN, MAI HUONG C
• Application Number:
  US10/729,090
• Publication Number:
  US 20040121500A1
• Time in Patent Office: 823 Days
• Field of Search: 438/22, 257/432, 257/436, 257/451, 257/461, 372/46
• US Class Current: 438/22
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01S 5/2227 special thin layer sequence
• CPC Class Codes: H01S 5/2275 mesa created by etching

Abstract

The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.

Claims

1. A method of manufacturing an optical device, comprising:

forming a mesa structure from said substrate, said mesa structure having a cladding layer located thereover; and

isolating an end of a first layer from said cladding layer by encapsulating said end between second and third layers located adjacent said mesa structure, wherein said first layer comprises indium phosphide and said encapsulating includes forming said first layer having said isolated end in the presence phosphorous trichloride.

2. The method as recited in claim 1 wherein said second and third layers comprise indium phosphide and said encapsulating includes forming said second and third layers in an atmosphere substantially free of phosphorous trichioride.

3. The method as recited in claim 1 wherein said isolating includes forming said first layer in the presence of a compound containing chlorine or bromine.

4. The method as recited in claim 1 wherein said second and third layers are doped with an n-type dopant.

5. The method as recited in claim 1 further including a fourth layer wherein said second layer is located between said first and fourth layers and said fourth layer is doped with a p-type dopant.

6. The method as recited in claim 1 wherein said first layer is doped with a metal capable of diffusing into said cladding layer.

7. A method of manufacturing an optical device, comprising:

forming a mesa structure from said substrate, said mesa structure having a cladding layer located thereover; and

isolating an end of a first layer from said cladding layer by encapsulating said end between second and third layers located adjacent said mesa structure, wherein said second and third layers comprise indium phosphide and said encapsulating includes forming said second and third layers in an atmosphere substantially free of phosphorous trichioride.

8. The method as recited in claim 7 wherein said first layer comprises indium phosphide and said encapsulating includes forming said first layer having said isolated end in the presence phosphorous trichloride.

9. The method as recited in claim 7 wherein said isolating includes forming said first layer in the presence of a compound containing chlorine or bromine.

10. The method as recited in claim 7 wherein said second and third layers are doped with an n-type dopant.

11. The method as recited in claim 7 further including a fourth layer wherein said second layer is located between said first and fourth layers and said fourth layer is doped with a p-type dopant.

12. The method as recited in claim 7 wherein said first layer is doped with a metal capable of diffusing into said cladding layer.

13. A method of manufacturing an optical device, comprising:

forming a mesa structure from said substrate, said mesa structure having a cladding layer located thereover; and

isolating an end of a first layer from said cladding layer by encapsulating said end between second and third layers located adjacent said mesa structure, wherein said isolating includes forming said first layer in the presence of a compound containing chlorine or bromine.

14. The method as recited in claim 13 wherein said first layer comprises indium phosphide and said encapsulating includes forming said first layer having said isolated end in the presence phosphorous trichloride.

15. The method as recited in claim 13 wherein said second and third layers comprise indium phosphide and said encapsulating includes forming said second and third layers in an atmosphere substantially free of phosphorous trichioride.

16. The method as recited in claim 13 wherein said second and third layers are doped with an n-type dopant.

17. The method as recited in claim 13 further including a fourth layer wherein said second layer is located between said first and fourth layers and said fourth layer is doped with a p-type dopant.

18. The method as recited in claim 13 wherein said first layer is doped with a metal capable of diffusing into said cladding layer.