Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof

• US 7,008,858 B2
• Filed: 10/28/2004
• Issued: 03/07/2006
• Est. Priority Date: 07/04/2003
• Status: Expired due to Term

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Liu, Wen-Huang, Hsieh, Min-Hsun, Tseng, Tzu-Feng, Wang, Jen-Shui, Yeh, Ting-Wei
• Primary Examiner(s): Hu, Shouxiang
• Application Number:
  US10/904,190
• Publication Number:
  US 20050077544A1
• Time in Patent Office: 495 Days
• Field of Search: 438/22, 438/24, 438 46- 47, 438/28, 438/455, 438458-459, 257 79-103
• US Class Current: 438/455
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.

Claims

1. A method for manufacturing a light emitting diode comprising the steps of:

forming an LED stack over a first substrate;

forming a reflective layer over said LED stack;

forming a first reaction layer over said reflective layer;

forming a second reaction layer over a second substrate; and

holding together said first reaction layer and said second reaction layer by means of an adhesive layer,

wherein each of the first and second reaction layers comprises at least a material selected from the group consisting of SiN_x, Ti, and Cr, and is formed to enhance an adhesion provided by the adhesive layer; and

wherein said adhesive layer comprises a material selected from the group consisting of polymide (PI), benzocyclobutene (BCB), and perfluorocyclobutane (PFCB).

2. A method for manufacturing a light emitting diode according to claim 1, wherein said reflective layer is a reflective metal layer.

3. A method for manufacturing a light emitting diode according to claim 1, wherein said reflective layer is a reflective oxide layer.

4. A method for manufacturing a light emitting diode according to claim 2, wherein said reflective metal layer comprises a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, and AuZn.

5. A method for manufacturing a light emitting diode according to claim 3, wherein said reflective oxide layer comprises a material selected from the group consisting of SiN_x, SiO₂, Al₂O₃, TiO₂, and MgO.

6. A method for manufacturing a light emitting diode according to claim 1 wherein the method further comprises the step of removing said first substrate.