Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures
First Claim
1. A method comprisingrecessing an interconnect line relative to a dielectric layer in which the interconnect line is disposed by selectively removing material of the interconnect line relative to material of the dielectric layer;
- electrolessly depositing a conductive material over the recessed interconnect line; and
annealing the electrolessly deposited conductive material by heating in an atmosphere including a trace amount of oxygen.
1 Assignment
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Accused Products
Abstract
Multiple level interconnect structures and methods for fabricating the interconnect structures are disclosed. The interconnect structures may contain an interconnect line, an electrolessly deposited metal layer formed over the interconnect line, a via formed over the metal layer, and a second interconnect line formed over the via. Often the metal layer contains a cobalt or nickel alloy and provides an etch stop layer for formation of an opening corresponding to the via. The metal layer may provide protection to the underlying interconnect line and may replace a traditional protective dielectric layer. The metal layer is conductive, rather than dielectric, and provides a shunt for passage of electrical current between the via and the interconnect line. Similar metal layers may also be used within the interconnect structures as via liner layers and via plugs.
93 Citations
16 Claims
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1. A method comprising
recessing an interconnect line relative to a dielectric layer in which the interconnect line is disposed by selectively removing material of the interconnect line relative to material of the dielectric layer; -
electrolessly depositing a conductive material over the recessed interconnect line; and annealing the electrolessly deposited conductive material by heating in an atmosphere including a trace amount of oxygen.
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2. A method comprising
recessing an interconnect line relative to a dielectric layer in which the interconnect line is disposed by selectively removing material of the interconnect line relative to material of the dielectric layer; -
electrolessly depositing a conductive material over the recessed interconnect line; and cleaning a surface of the electrolessly deposited conductive material by contacting the surface with a cleanser including an etching agent. - View Dependent Claims (3, 4, 5, 6, 7)
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8. A method comprising
electrolessly depositing a conductive material over an interconnect structure that is disposed within a dielectric layer; -
cleaning a surface of the conductive material by contacting the surface with a cleanser including an etching agent to etch the electrolessly deposited conductive material; and after said cleaning, annealing the electrolessly deposited conductive material by heating the electrolessly deposited conductive material in an atmosphere including a trace amount of oxygen.
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9. A method comprising:
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electrolessly depositing a conductive material over an interconnect structure that is disposed within a dielectric layer; and annealing the electrolessly deposited conductive material by heating the electrolessly deposited conductive material in an atmosphere including a trace amount of oxygen. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method comprising:
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electrolessly depositing a via plug in an opening formed in a dielectric layer, wherein the opening is at least partially over a first interconnect line, wherein the via plug includes one or more of boron and phosphorous; electrolessly depositing a liner layer on the electrolessly deposited via plug, wherein the liner layer includes a greater total concentration of boron and phosphorous than the via plug; and forming a second interconnect line on the electrolessly deposited liner layer. - View Dependent Claims (16)
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Specification