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Trench MIS device with thick oxide layer in bottom of gate contact trench

  • US 7,009,247 B2
  • Filed: 11/25/2003
  • Issued: 03/07/2006
  • Est. Priority Date: 07/03/2001
  • Status: Expired due to Term
First Claim
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1. A trench MIS device formed in a semiconductor substrate and comprising and active region and an inactive region, said active region comprising:

  • a first trench containing a first conductive gate material;

    a source region in said substrate; and

    a body region adjacent a side wall of said trench, said trench being lined with a thin insulating layer adjacent said body region;

    said inactive region comprising;

    a second trench containing a second conductive material, said second conductive material being in electrical contact with said first conductive material;

    a relatively thin insulating layer on a side wall of said second trench;

    a relatively thick insulating layer on a bottom of said second trench; and

    a gate bus in contact with said second conductive material.

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