Temperature stable voltage reference circuit using a metal-silicon Schottky diode for low voltage circuit applications

• US 7,009,444 B1
• Filed: 02/02/2004
• Issued: 03/07/2006
• Est. Priority Date: 02/02/2004
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: ON Semiconductor Corporation
• Inventors: Scott, Greg
• Primary Examiner(s): Zweizig, Jeffrey
• Application Number:
  US10/770,233
• Time in Patent Office: 764 Days
• Field of Search: 327/512, 327/513, 327/534, 327/535, 327/537, 327/538, 327/539, 327/540, 327/541, 327/542, 327/543
• US Class Current: 327/535
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence

Abstract

Silicon-based voltage reference circuits that generate a temperature independent voltage reference that is less than even the silicon bandgap potential. The voltage reference circuit includes a diode-connected metal-silicon Schottky diode that is biased with a current. In this configuration, the anode terminal of the Schottky diode is a CTAT voltage source in this configuration. The anode terminal has a voltage at zero degrees Kelvin at the barrier height of the Schottky diode, which may differ depending on the metal chosen, but in most cases is less than the bandgap potential of silicon. The voltage reference circuit also includes a PTAT voltage source. The PTAT voltage may be generated in a variety of ways. An amplifier amplifies the PTAT voltage, and a summer adds the CTAT voltage to the amplified PTAT voltage to generate the temperature stable voltage reference.

Claims

1. A silicon-based voltage reference circuit that generates a reference voltage that is less than the bandgap potential of silicon, and that is stable with temperature and supply voltage fluctuations, the voltage reference circuit comprising the following:

a metal-silicon Schottky diode;

a current source configured during operation to supply a current through the metal-silicon Schottky diode to a low voltage supply such that the metal-silicon Schottky diode has a current density;

a PTAT voltage source configured to generate a PTAT voltage; and

a summer having a first input terminal coupled to the PTAT voltage source so as to receive the PTAT voltage, and having a second input terminal coupled to the anode terminal of the metal-silicon Schottky diode to thereby sum the PTAT voltage with the voltage at the anode terminal of the metal-silicon Schottky diode.

2. A silicon-based voltage reference circuit in accordance with claim 1, wherein the current source is a first current source, the current density is a first current density, the metal-silicon Schottky diode is a first metal-silicon Schottky diode, the PTAT voltage source comprising the following:

a second metal-silicon Schottky diode;

a second current source configured during operation to supply a current through the second metal-silicon Schottky diode to a second low voltage supply such that the second metal-silicon Schottky diode has a second current density different than the first current density; and

an amplifier having a negative input terminal coupled to the anode terminal of the second metal-silicon Schottky diode, and a positive input terminal coupled to the anode terminal of the first metal-silicon Schottky diode.

3. The silicon-based bandgap voltage reference circuit in accordance with claim 2, wherein the first current source is configured during operation to pass a current through only one Schottky diode, the first metal-silicon Schottky diode.

4. The silicon-based bandgap voltage reference circuit in accordance with claim 3, wherein the second current source is configured during operation to pass a current through only one Schottky diode, the second metal-silicon Schottky diode.

5. A silicon-based voltage reference circuit in accordance with claim 1, wherein the current source is a first current source, the current density is a first current density, and the PTAT voltage source comprises the following:

a first bipolar transistor;

a second current source configured during operation to provide a current through the first bipolar transistor such that the base-emitter terminal of the first bipolar transistor has a second current density;

a second bipolar transistor;

a third current source configured during operation to provide a current through the second bipolar transistor such that the base-emitter terminal of the second bipolar transistor has a third current density that is different than the second current density; and

an amplifier having a negative input terminal coupled to the emitter terminal of the first bipolar transistor, and a positive input terminal coupled to the emitter terminal of the second bipolar transistor.

6. A silicon-based voltage reference circuit in accordance with claim 1, wherein the current source is a first current source, the current density is a first current density, and the PTAT voltage source comprises the following:

a bipolar transistor;

a second current source configured to supply a current through the bipolar transistor during a first time period such that the base-emitter terminal of the bipolar transistor has a second current density, and configured to supply a current through the bipolar transistor during a second time period that is non-overlapping with the first time period such that the base-emitter terminal of the bipolar transistor has a third current density that is different than the second current density;

a first capacitor configured to sample a voltage at the emitter terminal of the bipolar transistor during the first time period;

a second capacitor configured to sample a voltage at the emitter terminal of the emitter terminal of the metal-silicon Schottky diode during the second time period; and

an amplifier having a negative input terminal coupled to the second capacitor so as to receive the voltage sampled by the second capacitor, and a positive input terminal coupled to the first capacitor so as to receive the voltage sampled by the first capacitor.

7. The silicon-based bandgap voltage reference circuit in accordance with claim 1, wherein the current source is configured during operation to pass a current through only one Schottky diode, the metal-silicon Schottky diode.

8. The silicon-based bandgap voltage reference circuit in accordance with claim 1, wherein the current density is a first current density, the current source being configured to supply a current through the metal-silicon Schottky diode during a first time period such that the anode terminal of the metal-silicon Schottky diode has the first current density, and configured to supply a current through the metal-silicon Schottky diode during a second time period that is non-overlapping with the first time period such that the anode terminal of the metal-silicon Schottky diode has a second current density that is different than the first current density, the silicon-based voltage reference circuit further comprising the following:

a first capacitor configured to sample a voltage at the anode terminal of the metal-silicon Schottky diode during the first time period;

a second capacitor configured to sample a voltage at the anode terminal of the metal-silicon Schottky diode during the second time period;

an amplifier having a negative input terminal coupled to the second capacitor so as to receive the voltage sampled by the second capacitor, and a positive input terminal coupled to the first capacitor so as to receive the voltage sampled by the first capacitor; and

a summer having a first input terminal coupled to an output terminal of the amplifier, and having a second input terminal coupled to the positive terminal of the amplifier.

9. A silicon-based bandgap voltage reference in accordance with claim 8, wherein the current source comprises the following:

a first switch that is configured to be closed during the first time period;

a second switch that is configured to be closed during the second time period;

a first current source configured when the first switch is closed to supply a current through the metal-silicon Schottky diode such that the metal-silicon Schottky diode has the first current density; and

a second current source configured when the second switch is closed to supply a current through the metal-silicon Schottky diode such that the metal-silicon Schottky diode has the second current density.

10. A silicon-based bandgap voltage reference in accordance with claim 8, wherein the current source comprises the following:

a first switch that is configured to be closed during the second time period;

a first current source configured to supply a current through the metal-silicon Schottky diode such that the metal-silicon Schottky diode has the first current density; and

a second current source configured when the first switch is closed to supply a current through the metal-silicon Schottky diode such that the metal-silicon Schottky diode has a third current density, wherein the first current density added to the third current density is equal to the second voltage.

11. A silicon-based voltage reference in accordance with claim 1, wherein the metal-silicon Schottky diode is composed of TiSi2 as the metal.