Comprehensive erase verification for non-volatile memory
First Claim
1. A method of erasing non-volatile memory, comprising:
- erasing a group of non-volatile storage elements during user operation;
performing an erase verification operation to determine if said group of non-volatile storage elements is erased, said performing determines whether there is a first current flow above a first minimum current level in a first direction through said group;
reading said group of non-volatile storage elements for an erased state, said reading determines whether there is a second current flow above a second minimum current level in a second direction through said group; and
verifying that said group is erased if said erase verification operation determines that said group is erased and said step of reading reads said group as erased.
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Accused Products
Abstract
Systems and methods in accordance with various embodiments can provide for comprehensive erase verification and defect detection in non-volatile semiconductor memory. In one embodiment, the results of erasing a group of storage elements is verified using a plurality of test conditions to better detect defective and/or insufficiently erased storage elements of the group. For example, the results of erasing a NAND string can be verified by testing charging of the string in a plurality of directions with the storage elements biased to turn on if in an erased state. If a string of storage elements passes a first test process or operation but fails a second test process or operation, the string can be determined to have failed the erase process and possibly be defective. By testing charging or conduction of the string in a plurality of directions, defects in any transistors of the string that are masked under one set of conditions may be exposed under a second set of bias conditions. For example, a string may pass an erase verification operation but then be read as including one or more programmed storage elements. Such a string can be defective and mapped out of the memory device.
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Citations
59 Claims
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1. A method of erasing non-volatile memory, comprising:
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erasing a group of non-volatile storage elements during user operation; performing an erase verification operation to determine if said group of non-volatile storage elements is erased, said performing determines whether there is a first current flow above a first minimum current level in a first direction through said group; reading said group of non-volatile storage elements for an erased state, said reading determines whether there is a second current flow above a second minimum current level in a second direction through said group; and verifying that said group is erased if said erase verification operation determines that said group is erased and said step of reading reads said group as erased. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A memory system, comprising:
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a group of non-volatile storage elements located in a host system, said group includes a source side and a drain side; and a managing circuit in communication with said group, said managing circuit causes an erase operation to be performed for said group, said managing circuit performs an erase verification operation to determine whether said group is erased and reads at least one non-volatile storage element of said group for an erased state after erasing said group, said managing circuit reads said at least one non-volatile storage element for an erased state by applying a first voltage sufficient to turn on an erased storage element to each non-volatile storage element of said group, applying a second voltage at said source side, and applying a third voltage at said drain side, said third voltage is greater than said second voltage, wherein said managing circuit verifies that said group is erased when said erase verification operation determines that said group is erased and said at least one non-volatile storage element is read as erased. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37)
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38. A method of operating non-volatile memory, comprising:
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performing a plurality of programming operations to store user data in a memory system; and performing a plurality of erase operations to erase said user data, wherein at least one of said erase operations includes the steps of; erasing a group of non-volatile storage elements of said memory system; performing an erase verification operation to determine whether said group is erased after said step of erasing, said performing includes determining whether a charge at a first portion of said group is above a minimum level, reading at least one non-volatile storage element of said group for an erased state, said reading includes determining whether a charge at a second portion of said group is below a maximum level, and verifying that said group is erased if said step of performing an erase verification operation determines that said group is erased and said step of reading reads said at last one storage element as erased. - View Dependent Claims (39, 40, 41, 42, 43)
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44. A method of erasing non-volatile memory, comprising:
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erasing a group of non-volatile storage elements during user operation; performing an erase verification operation to determine if said group of non-volatile storage elements is erased; reading said group of non-volatile storage elements for an erased state, said reading includes applying a first voltage sufficient to turn on an erased storage element to each non-volatile storage element of said group, applying a second voltage at a source side of said group, and applying a third voltage at a drain side of said group, said third voltage is greater than said second voltage; and verifying that said group is erased if said erase verification operation determines that said group is erased and said step of reading reads said group as erased. - View Dependent Claims (45, 46, 47, 48, 49)
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50. A non-volatile memory system, comprising:
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a group of non-volatile storage elements located in a host system; and a managing circuit in communication with said group, said managing circuit causes an erase operation to be performed for said group, said managing circuit performs an erase verification operation to determine whether said group is erased and reads at least one non-volatile storage element of said group for an erased state after erasing said group, said managing circuit reads said at least one non-volatile storage element by testing conduction in a first direction through said group and performs said erase verification operation by testing conduction in a second direction through said group, said managing circuit verifies that said group is erased when said erase verification operation determines that said group is erased and said at least one non-volatile storage element is read as erased. - View Dependent Claims (51, 52, 53, 54)
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55. A method of operating non-volatile memory, comprising:
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performing a plurality of programming operations to store user data in a memory system; and performing a plurality of erase operations to erase said user data, wherein at least one of said erase operations includes the steps of; erasing a group of non-volatile storage elements of said memory system; performing an erase verification operation to determine whether said group is erased after said step of erasing, said erase verification operation tests conduction in a first direction through said group, reading at least one non-volatile storage element of said group for an erased state, said reading tests conduction in a second direction through said group, and verifying that said group is erased if said step of performing an erase verification operation determines that said group is erased and said step of reading reads said at last one storage element as erased. - View Dependent Claims (56, 57, 58, 59)
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Specification