CMOS process silicon waveguides
First Claim
1. An optical waveguide on a substrate, where the optical waveguide is comprised of:
- a core comprised of monocrystalline silicon, where the core and a silicon body of a transistor are formed from the same layer of monocrystalline silicon on the same substrate, anda cladding comprised of a plurality of dielectric materials, where at least one of the plurality of dielectric materials is comprised of a salicide block layer used during the fabrication of a transistor on the same substrate.
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Accused Products
Abstract
A standard CMOS process is used to fabricate optical and electronic devices at the same time on a monolithic integrated circuit. In the process, a layer of metallic salicide can be depsoited on those selected portions of an integrated circuit, where it is desired to have metallic contacts for electronic components, such as transistors. The deposition of a salicide into the core of an optical waveguide will damage the waveguide and prevent the passage of light through that section of the waveguide. Prior to the deposition of the salicide, a salicide blocking layer is deposited on those parts of an integrated circuit, such as on an optical waveguide, which are to be protected from damage by the deposition of salicide. The salicide blocking layer is used as one layer of the cladding of a silicon waveguide.
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Citations
18 Claims
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1. An optical waveguide on a substrate, where the optical waveguide is comprised of:
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a core comprised of monocrystalline silicon, where the core and a silicon body of a transistor are formed from the same layer of monocrystalline silicon on the same substrate, and a cladding comprised of a plurality of dielectric materials, where at least one of the plurality of dielectric materials is comprised of a salicide block layer used during the fabrication of a transistor on the same substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification