Method for forming thin film and method for fabricating liquid crystal display using the same

• US 7,011,981 B2
• Filed: 02/05/2004
• Issued: 03/14/2006
• Est. Priority Date: 11/13/2000
• Status: Expired due to Term

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Bae, Jong Uk, Kim, Jae Jeong, Kim, Soo Kil
• Primary Examiner(s): NGUYEN, HA T
• Application Number:
  US10/771,292
• Publication Number:
  US 20040157352A1
• Time in Patent Office: 768 Days
• Field of Search: 438/22, 438/30, 438/586, 438/678, 438/687, 438/688
• US Class Current: 438/20
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76852 the layer also covering the sidewalls of the conductive structure
• CPC Class Codes: H01L 21/76861 Post-treatment or after-treatment not introducing additional chemical elements into the layer
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

A method for forming a thin film and a method for fabricating a liquid crystal display device using the same are provided. The method provides a process that is simplified. Uniform thin film characteristics can be obtained. The method for forming a thin film includes the steps of forming a diffusion barrier film on a substrate, forming a metal seed layer on the diffusion barrier film, removing a metal oxide film formed on a surface of the metal seed layer using an electric plating method, and depositing metal on the metal seed layer in which the metal oxide film is removed.

Claims

1. A method for fabricating a liquid crystal display device comprising:

forming a first metal seed layer on a glass substrate;

depositing a first metal layer on the first metal seed layer using an electric plating method;

patterning the first metal seed layer and the first metal layer to form a gate line and a gate electrode;

forming a gate insulating film on an entire surface including the gate line;

forming a semiconductor layer on the gate electrode;

forming a second metal seed layer on the entire surface including the semiconductor layer;

depositing a second metal layer on the second metal seed layer using the electric plating method;

patterning the second metal seed layer and the second metal layer to form a data line crossing the gate line and source/drain electrodes on the semiconductor layer; and

forming a pixel electrode connected with the drain electrode, on a passivation film formed on the entire surface including the data line,

wherein the electric plating method includes the steps of;

arranging the substrate in a tub containing an electrolytic solution;

removing a metal oxide, wherein removing the metal oxide includes applying a first negative potential to the substrate;

providing a deposition solution to the tub having the electrolytic solution;

depositing a metal by applying a negative potential to the substrate, wherein depositing the metal includes applying a second negative potential to the substrate.

2. The method of claim 1, wherein the electric plating method is performed in such a manner that pH and potential of the electrolytic solution are controlled.

3. The method of claim 1, wherein the step of removing the metal oxide film and the step of depositing the metal are performed within different chambers in the tub.

4. The method of claim 1, wherein the electrolytic solution reduces the metal oxide film formed on the surfaces of the first and second metal seed layers to metal layers.

5. The method of claim 1, wherein the electric plating method is performed at a temperature of about 25˜

100°

C.

6. The method of claim 1, wherein the electric plating method is performed within the range of current of about 10˜

100 μ

A.

7. The method of claim 1, wherein the deposition solution includes a metal which is the same as the metal of the first and second metal seed layer and does not react with the electrolytic solution.

8. The method of claim 1, further comprising the steps of forming another substrate to oppose the glass substrate and forming a liquid crystal between the two substrates.

9. The method of claim 1, wherein the first and second metal seed layers are formed of a metal material containing metal of the first and second metal layers.

10. The method of claim 1, wherein the first and second metal layers are formed of any one of Cu, Al, Cr, Mo, W, or an Al alloy.