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Nitride semiconductor light emitting element and optical device containing it

  • US 7,012,283 B2
  • Filed: 09/17/2001
  • Issued: 03/14/2006
  • Est. Priority Date: 09/21/2000
  • Status: Expired due to Fees
First Claim
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1. A nitride semiconductor light emitting device formed on a substrate of a hexagonal crystal system,comprising a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately, wherein one or more of said quantum well layers is formed of InGaN or InAlGaN, and one or more of said barrier layers is formed of a nitride semiconductor layer containing As, wherein a concentration of said As in each of said barrier layers is more than 1×

  • 1018/cm 3, and said As is less than 20% of group V elements present in each of said barrier layers.

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