Nitride semiconductor light emitting element and optical device containing it

• US 7,012,283 B2
• Filed: 09/17/2001
• Issued: 03/14/2006
• Est. Priority Date: 09/21/2000
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Tsuda, Yuhzoh, Araki, Masahiro, Ito, Shigetoshi
• Primary Examiner(s): Flynn, Nathan
• Assistant Examiner(s): Erdem, Fazli
• Application Number:
  US10/381,113
• Publication Number:
  US 20040026710A1
• Time in Patent Office: 1,639 Days
• Field of Search: 257/103, 257/107, 257/104, 257/96, 257/97, 257/14, 257/17, 257/79, 257/25, 257/80, 257/81, 257/77, 257/78
• US Class Current: 257/103
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/305 characterised by the doping materials used in the laser structure
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: H01S 5/34346 characterised by the materials of the barrier layers

Abstract

According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer (106) having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaN_{1−x−y−z}As_xP_ySb_z (0<x+y+z≦0.3), and the barrier layer is formed of a nitride semiconductor containing In.

Claims

1. A nitride semiconductor light emitting device formed on a substrate of a hexagonal crystal system,

comprising a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately, wherein

one or more of said quantum well layers is formed of InGaN or InAlGaN, and

one or more of said barrier layers is formed of a nitride semiconductor layer containing As,

wherein a concentration of said As in each of said barrier layers is more than 1×

10¹⁸/cm ³, and said As is less than 20% of group V elements present in each of said barrier layers.

2. The nitride semiconductor light emitting device according to claim 1, wherein at least one of a first adjacent semiconductor layer in contact with a first one of main surfaces of said light emitting layer closer to said substrate and a second adjacent semiconductor layer in contact with a second one of the main surfaces of said light emitting layer farther from said substrate is formed of a nitride semiconductor containing Al.

3. The nitride semiconductor light emitting device according to claim 2, wherein one of said well layers is in direct contact with one of said first adjacent semiconductor layer and said second adjacent semiconductor layer.

4. The nitride semiconductor light emitting device according to claim 1, wherein said light emitting layer includes at least two and at most ten said well layers.

5. The nitride semiconductor light emitting device according to claim 1, wherein each of said well layers has a thickness of more than 0.4 nm and less than 20 nm.

6. The nitride semiconductor light emitting device according to claim 1, wherein each of said barrier layers has a thickness of more than 1 nm and less than 20 nm.

9. The nitride semiconductor light emitting device according to claim 1, wherein at least one of said well layers and said barrier layers contains at least one dopant selected from a group consisting of Si, O, S, C, Ge, Zn, Cd and Mg.

10. The nitride semiconductor light emitting device according to claim 9, wherein a concentration of said dopant is in a range of 1×

10¹⁶/cm³ to 1×

10²⁰/cm³.

11. The nitride semiconductor light emitting device according to claim 1, wherein said substrate is formed of GaN.

12. An optical device including the nitride semiconductor light emitting device of claim 1.

23. The nitride semiconductor light emitting device according to claim 2, further comprising a nitride semiconductor layer containing Al in contact with one of main surfaces of said light emitting layer farther from said substrate, and a p type GaN layer in contact with said nitride semiconductor layer containing Al.

24. The nitride semiconductor light emitting device according to claim 2, further comprising a nitride semiconductor layer containing Al in contact with one of main surfaces of said light emitting layer closer to said substrate, and an n type GaN layer in contact with said nitride semiconductor layer containing Al.

26. A method of forming the nitride semiconductor light emitting device of claim 1, wherein a growth break interval of at least 1 second and at most 180 seconds is provided between crystal growth of said well layer and crystal growth of said barrier layer.

39. A nitride semiconductor light emitting device according to claim 1, wherein each of said quantum well layers of the light emitting layer is formed of InGaN or InAlGaN.

40. A nitride semiconductor light emitting device according to claim 1, wherein each of said barrier layers of the light emitting layer is formed of said nitride semiconductor layer containing As.

7. A nitride semiconductor light emitting device formed on a substrate of a hexagonal crystal system.

comprising a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately, wherein

one or more of said quantum well layers is formed of InGaN or InAlGaN, and

one or more of said barrier layers is formed of a nitride semiconductor layer containing P.

wherein a concentration of said P in each of said barrier layers is more than 1×

10¹⁹/cm³, and the P is less than 25% of group V elements present an each of said barrier layers.

30. The nitride semiconductor light emitting device according to claim 7, wherein at least one of a first adjacent semiconductor layer in contact with a first one of main surfaces of said light emitting layer closer to said substrate and a second adjacent semiconductor layer in contact with a second one of the main surfaces of said light emitting layer farther from said substrate is formed of a nitride semiconductor containing Al.

31. An optical device including the nitride semiconductor light emitting device of claim 7.

32. The nitride semiconductor light emitting device according to claim 7, further comprising a light guide layer, wherein said light guide layer is formed of GaN₁₋

x−

y−

zAs_xP_ySb_z (0≦

x≦

0.075, 0≦

y≦

0.1, 0≦

z≦

0.025, 0<

x+y+z).

33. A method of forming the nitride semiconductor light emitting device of claim 7, wherein a growth break interval of at least 1 second and at most 180 seconds is provided between crystal growth of said well layer and crystal growth of said barrier layer.

41. A nitride semiconductor light emitting device according to claim 7, wherein each of said quantum well layers of the light emitting layer is formed of InGaN or InAlGaN.

42. A nitride semiconductor light emitting device according to claim 7, wherein each of said barrier layers of the light emitting layer is formed of said nitride semiconductor layer containing P.

8. A nitride semiconductor light emitting device formed on a substrate of a hexagonal crystal system,

comprising a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately, wherein

one or more of said quantum well layers is formed of InGaN or InAlGaN, and

one or more of said barrier layers is formed of a nitride semiconductor layer containing Sb,

wherein a concentration of said Sb in each of said barrier layers is more than 1×

10¹⁷/cm³, and the Sb is less than 15% of group V elements present in each of said barrier layers.

34. The nitride semiconductor light emitting device according to claim 8, wherein at least one of a first adjacent semiconductor layer in contact with a first one of main surfaces of said light emitting layer closer to said substrate and a second adjacent semiconductor layer in contact with a second one of the main surfaces of said light emitting layer farther from said substrate is formed of a nitride semiconductor containing Al.

35. An optical device including the nitride semiconductor light emitting device of claim 8.

36. The nitride semiconductor light emitting device according to claim 8, further comprising a light guide layer, wherein said light guide layer is formed of GaN₁₋

x−

y−

zAs_xP_ySb_z (0≦

x≦

0.075, 0≦

y≦

0.1, 0≦

z≦

0.025, 0<

x+y+z).

37. A method of forming the nitride semiconductor light emitting device of claim 8, wherein a growth break interval of at least 1 second and at most 180 seconds is provided between crystal growth of said well layer and crystal growth of said barrier layer.

43. A nitride semiconductor light emitting device according to claim 8, wherein each of said quantum well layers of the light emitting layer is formed of InGaN or InAlGaN.

44. A nitride semiconductor light emitting device according to claim 8, wherein each of said barrier layers of the light emitting layer is formed of said nitride semiconductor layer containing Sb.

13. A nitride semiconductor light emitting device formed on a substrate of a hexagonal crystal system,

comprising a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately, wherein

one or more of said well layers is formed of GaN₁₋

x−

y−

zAs_xP_ySb_z (0<

x+y+z≦

0.3), and

one or more of said barrier layers is formed of a nitride semiconductor layer having an In content of more than 0.1% and less than 15% of group III elements.

14. The nitride semiconductor light emitting device according to claim 13, wherein at least one of As, P and Sb is included in said one or more barrier layers.

15. The nitride semiconductor light emitting device according to claim 14, wherein a total of the As, P and Sb in said one or more of said barrier layers is more than 2×

10<sup>−

5</sup>% and less than 20% of group V elements present in each of said barrier layers.

16. The nitride semiconductor light emitting device according to claim 14, wherein each of said barrier layers includes all constituent elements of said one or more well layers.

17. The nitride semiconductor light emitting device according to claim 13, wherein the number of said one or more well layers included in said light emitting layer is at least 2 and at most 10.

18. The nitride semiconductor light emitting device according to claim 13, wherein said substrate is formed of GaN.

19. The nitride semiconductor light emitting device according to claim 13, wherein each of said one or more well layers has a thickness of more than 3 nm and less than 20 nm, and each of said one or more barrier layers has a thickness of more than 3 nm and less than 20 nm.

20. The nitride semiconductor light emitting device according to claim 18, wherein each of said one or more well layers has a thickness of more than 0.4 nm and less than 20 nm, and each of said one or more barrier layers has a thickness of more than 1 nm and less than 20 nm.

21. The nitride semiconductor light emitting device according to claim 13, wherein at least one impurity selected from a group consisting of Si, O, S, Ge, Zn, Cd and Mg is added in said light emitting layer at a total concentration of more than 1×

10¹⁶/cm³ and less than 1×

10²⁰/cm³.

22. An optical device including the nitride semiconductor light emitting device of claim 13.

27. The nitride semiconductor light emitting device according to claim 13, further comprising a light guide layer, wherein said barrier layer has a bandgap energy smaller than that of said light guide layer.

28. The nitride semiconductor light emitting device according to claim 13, further comprising a nitride semiconductor layer containing Al, a p type GaN layer and a p type AlGaN layer formed in this order on a main surface of said light emitting layer farther from said substrate, wherein a first surface of said p type GaN layer contacts said nitride semiconductor layer containing Al, and wherein a second surface of said p type GaN layer contacts said p type AlGaN layer.

29. A method of forming the nitride semiconductor light emitting device according to claim 15, wherein a growth break interval of at least 1 second and at most 180 seconds is provided between crystal growth of said well layer and crystal growth of said barrier layer.

45. A nitride semiconductor light emitting device according to claim 13, wherein each of said well layers of the light emitting layer is formed of GaN₁₋

x−

y−

zAs_xP_ySb_z (0<

x+y+z≦

0.3).

46. A nitride semiconductor light emitting device according to claim 13, wherein each of said barrier layers of the light emitting layer is formed of said nitride semiconductor layer having In.

25. A nitride semiconductor light emitting device formed on a substrate of a hexagonal crystal system,

comprising a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately, wherein

one or more of said quantum well layers is formed of InGaN or InAlGaN, and

one or more of said barrier layers is formed of a nitride semiconductor layer containing As, P or Sb,

further comprising a light guide layer formed of GaN₁₋

x−

y−

zAs_xP_ySb_z (0≦

x≦

0.075, 0≦

y≦

0.1, 0≦

z≦

0.025, 0<

x+y+z), wherein said barrier layer has a bandgap energy smaller than that of said light guide layer.

38. A method of forming a nitride semiconductor light emitting device formed on a substrate of a hexagonal crystal system,

comprising a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately, wherein

one or more of said quantum well layers is formed of InGaN or InAlGaN, and

one or more of said barrier layers is formed of a nitride semiconductor layer containing As, P or Sb,

further comprising a light guide layer, wherein said barrier layer has a bandgap energy smaller than that of said light guide layer,

wherein said method comprises growing a well layer and growing a barrier layer, and wherein a growth break interval of at least 1 second and at most 180 seconds is provided between crystal growth of said well layer and crystal growth of said barrier layer.