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Semiconductor light emitting device and method

  • US 7,015,054 B2
  • Filed: 11/10/2003
  • Issued: 03/21/2006
  • Est. Priority Date: 12/22/1999
  • Status: Expired due to Fees
First Claim
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1. A method for making semiconductor light emitting device chips, comprising the steps of:

  • providing a substrate of substantially transparent silicon carbide;

    forming a semiconductor structure on one side of said substrate, said semiconductor structure having a plurality of semiconductor layers and an active region within said layers;

    applying electrodes to semiconductor layers of said structure on said one side of said substrate to four semiconductor light emitting devices; and

    dicing said substrate and devices into a plurality of chipswherein said substrate has a refractive index n>

    2.3 and a light absorption coefficient α

    , at an emission wavelength of said active region, of α

    <

    3 cm

    1
    .

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