Intensified hybrid solid-state sensor

• US 7,015,452 B2
• Filed: 04/14/2004
• Issued: 03/21/2006
• Est. Priority Date: 10/09/2001
• Status: Expired due to Term

• Current Assignee: Elbit Systems of America LLC (Elbit Systems Limited)
• Original Assignee: ITT Manufacturing Enterprises, Inc. (ITT, Inc.)
• Inventors: Thomas, Nils I., Smith, Arlynn W., Benz, Rudolph G.
• Primary Examiner(s): Porta, David
• Assistant Examiner(s): Ko, Tony
• Application Number:
  US10/824,084
• Publication Number:
  US 20050167575A1
• Time in Patent Office: 706 Days
• Field of Search: 250/214.VT, 250/208.1, 250/370.09, 250/370.11, 348/162, 313/313.R, 313/103, 313/103.R
• US Class Current: 250/214.0VT
• CPC Class Codes: G01T 1/2957 using channel multiplier arrays channel multipliers H01J43/18; G01T1/1645 takes precedence
• CPC Class Codes: H01J 2231/50068 Electrical
• CPC Class Codes: H01J 2231/5016 Michrochannel plates [MCP]
• CPC Class Codes: H01J 31/26 Image pick-up tubes having an input of visible light and electric output tubes without defined electron beams and having a light ray scanning photo-emissive screen H01J40/20
• CPC Class Codes: H01J 31/48 Tubes with amplification of output effected by electron multiplier arrangements within the vacuum space
• CPC Class Codes: H01J 31/49 Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation

Abstract

An intensified solid-state imaging sensor includes a photo cathode for converting light from an image into electrons, an electron multiplying device for receiving electrons from the photo cathode, and a solid-state image sensor including a plurality of pixels for receiving the electrons from the electron multiplying device through a plurality of channels of the electron multiplying device. The solid-state image sensor generates an intensified image signal from the electrons received from the electron multiplying device. The plurality of channels are arranged in a plurality of channel patterns, and the plurality of pixels are arranged in a plurality of pixel patterns. Each of the plurality of channel patterns is mapped to a respective one of the plurality of pixel patterns such that electron signals from each of the plurality of channel patterns is substantially received by the single respective one of the plurality of pixel patterns.

Claims

1. An intensified solid-state imaging sensor comprising:

a photo cathode for converting light from an image into electrons;

an electron multiplying device for receiving electrons from the photo cathode, the electron multiplying device outputting a greater number of electrons than the electron multiplying device receives from the photo cathode; and

a solid-state image sensor including a plurality of pixels for receiving the electrons from the electron multiplying device through a plurality of channels of the electron multiplying device, the solid-state image sensor generating an intensified image signal from the electrons received from the electron multiplying device,

the plurality of channels being arranged in a plurality of channel patterns, and the plurality of pixels being arranged in a plurality of pixel patterns, each of the plurality of channel patterns being mapped to a respective one of the plurality of pixel patterns and

each of the pixels and each of the channels includes, respectively, a pixel face surface and a channel face surface in opposing relationship to each other,

the pixel and channel face surfaces each having a linear boundary,

wherein respective linear boundaries of the plurality of channels are arranged so that they do not cross respective linear boundaries of the plurality of pixels.

2. The intensified solid-state imaging sensor of claim 1 wherein each of the plurality of channel patterns comprises a single channel, and each of the plurality of pixel patterns comprises a single pixel.

3. The intensified solid-state imaging sensor of claim 2 wherein each of the plurality of channel patterns is substantially the same size and shape as the respective one of the plurality of pixel patterns.

4. The intensified solid-state imaging sensor of claim 1 wherein each of the plurality of channel patterns comprises a plurality of channels, and each of the plurality of pixel patterns comprises a single pixel.

5. The intensified solid-state imaging sensor of claim 1 wherein each of the plurality of channel patterns comprises a single channel, and each of the plurality of pixel patterns comprises a plurality of pixels.

6. The intensified solid-state imaging sensor of claim 1 wherein each of the plurality of channel patterns comprises a plurality of channels, and each of the plurality of pixel patterns comprises a plurality of pixels.

7. The intensified solid-state imaging sensor of claim 1 wherein each of the plurality of channel patterns is rotationally and translationally aligned with the respective one of the plurality of pixel patterns.

8. The intensified solid-state imaging sensor of claim 1 wherein the electron multiplying device comprises a multi-channel plate, and the plurality of channels comprises a plurality of pores of the multi-channel plate.

9. The intensified solid-state imaging sensor of claim 1 wherein the solid-state image sensor is CCD device.

10. The intensified solid-state imaging sensor of claim 1 wherein the solid-state image sensor is a CMOS device.