Gallium nitride-based light emitting device and method for manufacturing the same
First Claim
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1. A gallium nitride-based light emitting device, comprising:
- a substrate;
a GaN-based layer formed on the substrate;
an AlGaN-based layer formed on the GaN-based layer; and
a light emitting layer formed on the AlGaN-based layer,wherein a surface of the GaN-based layer at a boundary relative to the AlGaN-based layer comprises a plurality of island shapes defining a plurality of inclined faces, such that tensile stress formed in the AlGaN-based layer along the inclined faces of the island shapes is not parallel to a direction along which the AlGaN-based layer lies.
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Abstract
For a light emitting device using gallium nitride (GaN), on a substrate are sequentially formed a GaN-based layer, an AlGaN-based layer, and a light emitting layer. To prevent cracks in the AGaN-based layer, the AlGaN-based layer is formed before planarization of the surface of the GaN layer on a surface of the GaN layer which is not planar. For a laser, the AlGaN-based layers serve as clad layers which sandwich the light emitting layer.
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Citations
14 Claims
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1. A gallium nitride-based light emitting device, comprising:
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a substrate; a GaN-based layer formed on the substrate; an AlGaN-based layer formed on the GaN-based layer; and a light emitting layer formed on the AlGaN-based layer, wherein a surface of the GaN-based layer at a boundary relative to the AlGaN-based layer comprises a plurality of island shapes defining a plurality of inclined faces, such that tensile stress formed in the AlGaN-based layer along the inclined faces of the island shapes is not parallel to a direction along which the AlGaN-based layer lies. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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2. A gallium nitride-based light emitting device, comprising:
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a substrate; a GaN-based layer formed on the substrate; an AlGaN-based layer formed on the GaN-based layer; and a light emitting layer formed on the AlGaN-based layer, wherein the AlGaN-based layer is formed on the GaN-based layer before a surface of the GaN-based layer has grown to be planar. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification