Nonvolatile semiconductor memory cell and method of manufacturing the same
First Claim
1. A nonvolatile semiconductor memory cell comprising:
- a semiconductor substrate;
a stacked-gate structure that includes a tunnel insulation film, a floating gate electrode, an inter-electrode insulation film and a control gate electrode, which are stacked on the semiconductor substrate, the inter-electrode insulation film having a three-layer structure that includes a first oxidant barrier layer, an intermediate insulation layer and a second oxidant barrier layer; and
gate side-wall insulation films formed on both side surfaces of the stacked-gate structure,wherein a thickness of the gate side-wall insulation film increases, at a side portion of the floating gate electrode, from the inter-electrode insulation film side toward the tunnel insulation film side, and the width of the floating gate electrode in a channel length direction decreases from the inter-electrode insulation film side toward the tunnel insulation film side,wherein a width (Q) of the floating gate electrode in the channel length direction is 50 nm or less on a surface of the tunnel insulation film, and a distance (S) between an end portion of one of the gate side-wall insulation films, which end portion is located on a side opposed to the floating gate electrode, and an end portion of the other gate side-wall insulation film, which end portion is located on a side opposed to the floating gate electrode, is 1.3 or more times as great as the width (Q) of the floating gate electrode in the channel length direction, andwherein a portion of the floating gate contacts the inter-electrode insulation film, and a length (P) of the portion of the floating gate satisfies;
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P<
S.
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Accused Products
Abstract
A stacked-gate structure includes a tunnel insulation film, a floating gate electrode, an inter-electrode insulation film and a control gate electrode, which are stacked on a semiconductor substrate. The inter-electrode insulation film has a three-layer structure that includes a first oxidant barrier layer, an intermediate insulation layer and a second oxidant barrier layer. Gate side-wall insulation films are formed on both side surfaces of the stacked-gate structure. The thickness of the gate side-wall insulation film increases, at a side portion of the floating gate electrode, from the inter-electrode insulation film side toward the tunnel insulation film side. The width of the floating gate electrode in a channel length direction decreases from the inter-electrode insulation film side toward the tunnel insulation film side.
16 Citations
10 Claims
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1. A nonvolatile semiconductor memory cell comprising:
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a semiconductor substrate; a stacked-gate structure that includes a tunnel insulation film, a floating gate electrode, an inter-electrode insulation film and a control gate electrode, which are stacked on the semiconductor substrate, the inter-electrode insulation film having a three-layer structure that includes a first oxidant barrier layer, an intermediate insulation layer and a second oxidant barrier layer; and gate side-wall insulation films formed on both side surfaces of the stacked-gate structure, wherein a thickness of the gate side-wall insulation film increases, at a side portion of the floating gate electrode, from the inter-electrode insulation film side toward the tunnel insulation film side, and the width of the floating gate electrode in a channel length direction decreases from the inter-electrode insulation film side toward the tunnel insulation film side, wherein a width (Q) of the floating gate electrode in the channel length direction is 50 nm or less on a surface of the tunnel insulation film, and a distance (S) between an end portion of one of the gate side-wall insulation films, which end portion is located on a side opposed to the floating gate electrode, and an end portion of the other gate side-wall insulation film, which end portion is located on a side opposed to the floating gate electrode, is 1.3 or more times as great as the width (Q) of the floating gate electrode in the channel length direction, and wherein a portion of the floating gate contacts the inter-electrode insulation film, and a length (P) of the portion of the floating gate satisfies;
Q<
P<
S. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A memory card comprising:
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a memory chip including a plurality of nonvolatile memory cells, and a controller that controls the memory chip, the memory chip and the controller being mounted on a single wiring board, wherein the memory cell comprises; a stacked-gate structure that includes a tunnel insulation film, a floating gate electrode, an inter-electrode insulation film and a control gate electrode, which are stacked on a semiconductor substrate, the inter-electrode insulation film having a three-layer structure that includes a first oxidant barrier layer, an intermediate insulation layer and a second oxidant barrier layer; and gate side-wall insulation films formed on both side surfaces of the stacked-gate structure; wherein a thickness of the gate side-wall insulation film increases, at a side portion of the floating gate electrode, from the inter-electrode insulation film side toward the tunnel insulation film side, and the width of the floating gate electrode in a channel length direction decreases from the inter-electrode insulation film side toward the tunnel insulation film side, wherein a width (Q) of the floating gate electrode in the channel length direction is 50 nm or less on a surface of the tunnel insulation film, and a distance (S) between an end portion of one of the gate side-wall insulation films, which end portion is located on a side opposed to the floating gate electrode, and an end portion of the other gate side-wall insulation film, which end portion is located on a side opposed to the floating gate electrode, is 1.3 or more times as great as the width (Q) of the floating gate electrode in the channel length direction; and wherein a portion of the floating gate contacts the inter-electrode insulation film, and a length (P) of the portion of the floating gate satisfies;
Q<
P<
S.
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Specification