Current-controlled CMOS circuits with inductive broadbanding
First Claim
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1. A metal-oxide-semiconductor field-effect transistor (MOSFET) circuit fabricated on a silicon substrate, the MOSFET circuit comprising:
- a first circuitry, implemented using conventional complementary metal-oxide-semiconductor (CMOS) logic wherein substantially zero static current is dissipated, that is operable to;
receive a first plurality of signals;
process the first plurality of signals thereby generating a second plurality of signals such that each signal of the second plurality of signals has a first frequency; and
output the second plurality of signals;
a second circuitry, implemented using current-controlled complementary metal-oxide semiconductor (C3MOS) logic with inductive broadbanding, wherein logic levels are signaled by current steering in one of two or more branches in response to differential input signals that correspond to at least one signal of the second plurality of signals, and wherein first and second series connected RL circuits respectively couple first and second output nodes of a logic element to a power supply node, that is operable to;
receive the second plurality of signals; and
process the second plurality of signals thereby generating at least one output signal that has a second frequency.
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Abstract
Various circuit techniques for implementing ultra high speed circuits use current-controlled CMOS (C3MOS) logic with inductive broadbanding fabricated in conventional CMOS process technology. Optimum balance between power consumption and speed for each circuit application is achieved by combining high speed C3MOS logic with inductive broadbanding/C3MOS logic with low power conventional CMOS logic. The combined C3MOS logic with inductive broadbanding/C3MOS/CMOS logic allows greater integration of circuits such as high speed transceivers used in fiber optic communication systems.
6 Citations
20 Claims
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1. A metal-oxide-semiconductor field-effect transistor (MOSFET) circuit fabricated on a silicon substrate, the MOSFET circuit comprising:
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a first circuitry, implemented using conventional complementary metal-oxide-semiconductor (CMOS) logic wherein substantially zero static current is dissipated, that is operable to; receive a first plurality of signals; process the first plurality of signals thereby generating a second plurality of signals such that each signal of the second plurality of signals has a first frequency; and output the second plurality of signals; a second circuitry, implemented using current-controlled complementary metal-oxide semiconductor (C3MOS) logic with inductive broadbanding, wherein logic levels are signaled by current steering in one of two or more branches in response to differential input signals that correspond to at least one signal of the second plurality of signals, and wherein first and second series connected RL circuits respectively couple first and second output nodes of a logic element to a power supply node, that is operable to; receive the second plurality of signals; and process the second plurality of signals thereby generating at least one output signal that has a second frequency. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A metal-oxide-semiconductor field-effect transistor (MOSFET) circuit fabricated on a silicon substrate, the MOSFET circuit comprising:
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a first circuitry, implemented using conventional complementary metal-oxide-semiconductor (CMOS) logic wherein substantially zero static current is dissipated, that is operable to; receive a first plurality of signals; process the first plurality of signals thereby generating a second plurality of signals such that each signal of the second plurality of signals has a first frequency; and output the second plurality of signals; a second circuitry, implemented using current-controlled complementary metal-oxide semiconductor (C3MOS) logic, wherein logic levels are signaled by current steering in one of two or more branches in response to differential input signals that correspond to at least one signal of the second plurality of signals, that is operable to; receive the second plurality of signals; and process the second plurality of signals thereby generating a third plurality of signals such that each signal of the third plurality of signals has a second frequency; and a third circuitry, implemented using C3MOS logic with inductive broadbanding, wherein logic levels are signaled by current steering in one of two or more branches in response to differential input signals that correspond to at least one signal of the third plurality of signals, and wherein first and second series connected RL circuits respectively couple first and second output nodes of a logic element to a power supply node, that is operable to; receive the third plurality of signals; and process the third plurality of signals thereby generating at least one output signal that has a third frequency. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A metal-oxide-semiconductor field-effect transistor (MOSFET) circuit fabricated on a silicon substrate, the MOSFET circuit comprising:
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a first circuitry, implemented using current-controlled complementary metal-oxide semiconductor (C3MOS) logic, wherein logic levels are signaled by current steering in one of two or more branches in response to differential input signals that correspond to at least one signal of a first plurality of signals, that is operable to; receive the first plurality of signals; and process the first plurality of signals thereby generating a second plurality of signals such that each signal of the second plurality of signals has a first frequency; and a second circuitry, implemented using C3MOS logic with inductive broadbanding, wherein logic levels are signaled by current steering in one of two or more branches in response to differential input signals that correspond to at least one signal of the second plurality of signals, and wherein first and second series connected RL circuits respectively couple first and second output nodes of a logic element to a power supply node, that is operable to; receive the second plurality of signals; and process the second plurality of signals thereby generating at least one output signal that has a second frequency. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification