Magnetic field sensor

• US 7,016,163 B2
• Filed: 02/20/2003
• Issued: 03/21/2006
• Est. Priority Date: 02/20/2003
• Status: Expired due to Fees

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Wan, Hong, Withanawasam, Lakshman S.
• Primary Examiner(s): HEINZ, ALLEN J
• Application Number:
  US10/370,652
• Publication Number:
  US 20040165319A1
• Time in Patent Office: 1,125 Days
• Field of Search: 360/316
• US Class Current: 360/324.1
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/0008 Magnetic conditionning of heads, e.g. biasing

Abstract

A spin valve GMR sensor configured in a bridge configuration is provided. The bridge includes two spin valve element pairs. The spin valve elements include a free layer, a space layer, a pinned layer, and a bias layer. The bias layer includes a first bias layer and a second bias layer. The first and second spin valve element pairs are formed on separate metal layers and a current pulse is applied to the metal layers, which sets the direction of magnetization in the pinned layer of the first pair of spin valve elements to be antiparallel to the direction of magnetization in the pinned layer of the second pair of spin valve elements. The same effect can be accomplished by making the pinned layer substantially thicker than the second bias layer in the first spin valve element pair and the pinned layer is substantially thinner than the second bias layer in the second spin valve element pair and applying a magnetic field to the first and the second spin valve element pairs.

Claims

1. A spin valve giant magnetoresistive sensor in a bridge configuration, comprising in combination:

a first pair of spin valve elements formed on a first dielectric layer, wherein the first dielectric layer is formed on a first metal layer, wherein the first dielectric layer isolates the first pair of spin valve elements from the first metal layer, and wherein a current pulse applied to the first metal layer after fabrication of the sensor sets a direction of magnetization in the first pair of spin valve elements; and

a second pair of spin valve elements formed on a second dielectric layer, wherein the second dielectric layer is formed a second metal layer, wherein the first dielectric layer isolates the second pair of spin valve elements from the second metal layer, and wherein a current pulse applied to the second metal layer after fabrication of the sensor sets a direction of magnetization in the second pair of spin valve elements.

2. The sensor of claim 1, wherein the first metal layer and the second metal layer are connected to electrodes.

3. The sensor of claim 2, wherein the current pulse is applied to the electrodes connected to the first metal layer and the second metal layer.

4. The sensor of claim 1, wherein the current pulse is applied for approximately 1 microsecond and has a peak greater than 100 milliamperes.

5. The sensor of claim 1, wherein the current pulse generates a first magnetic field in the first pair of spin valve elements and a second magnetic field in the second pair of spin valve elements.

6. The sensor of claim 5, wherein the first magnetic field is in a direction substantially opposite to that of the second magnetic field.

7. The sensor of claim 5, wherein the first magnetic field and the second magnetic field set a direction of magnetization in a pinned layer of the first spin valve element pair to be substantially antiparallel to a direction of magnetization in a pinned layer of the second spin valve element pair.