Micro-mechanical capacitive inductive sensor for wireless detection of relative or absolute pressure

• US 7,017,419 B2
• Filed: 08/31/2004
• Issued: 03/28/2006
• Est. Priority Date: 06/18/2002
• Status: Active Grant

• Current Assignee: Corporation for National Research Initiatives
• Original Assignee: Corporation for National Research Initiatives
• Inventors: Pedersen, Michael, Huff, Michael A., Ozgur, Mehmet
• Primary Examiner(s): OEN, WILLIAM L
• Application Number:
  US10/929,446
• Publication Number:
  US 20050028601A1
• Time in Patent Office: 574 Days
• Field of Search: 737/18, 737/24, 737/53, 737/14, 361/283.1, 361/283.2, 361/283.3, 361/283.4
• US Class Current: 73/718
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A micro-mechanical pressure transducer is disclosed in which a capacitive transducer structure is integrated with an inductor coil to form a LC tank circuit, resonance frequency of which may be detected remotely by imposing an electromagnetic field on the transducer. The capacitive transducer structure comprises a conductive movable diaphragm, a fixed counter electrode, and a predetermined air gap between said diaphragm and electrode. The diaphragm deflects in response to an applied pressure differential, leading to a change of capacitance in the structure and hence a shift of resonance frequency of the LC tank circuit. The resonance frequency of the LC circuit can be remotely detected by measuring and determining the corresponding peak in electromagnetic impedance of the transducer.

Claims

1. A method of forming a micro-mechanical pressure sensor comprising the steps of:

providing a first substrate,

depositing a first masking layer on the first substrate,

patterning the first masking layer on a front side of the first substrate,

etching a cavity on the front side of the first substrate,

removing the first masking layer from the first substrate,

forming a bulk layer in the front side of the first substrate,

depositing a second masking layer on the bulk layer,

patterning the second masking layer on the back side of the first substrate to form an opening,

etching a second cavity on the back side of the first substrate, thereby forming a diaphragm in the first substrate,

removing the second masking layer from the first substrate,

depositing a conductive layer on the front side of the first substrate to provide a highly conductive diaphragm,

providing a second substrate formed from a plurality of dielectric layers and a plurality of conductive layers forming an inductive coil,

polishing the front side of the second substrate to achieve a smooth surface,

depositing a second conductive layer on the front side of the second substrate,

patterning the second conductive layer to form a counter electrode and a bonding area, and

bonding the first and second substrates together to form an air gap between the conductive diaphragm and the counter electrode.

2. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the first substrate is single crystal silicon.

3. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the first substrate is silicon on insulator (SOI).

4. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the second substrate is a low-temperature co-fired ceramic (LTCC).

5. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the second substrate is a high-temperature co-fired ceramic (HTCC).

6. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the second substrate is sequentially-build-up (SBU) multi-layer printed circuit boards.

7. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the diaphragm is formed in the first substrate by chemical etching.

8. The method of forming a micro-mechanical pressure sensor as recited in claim 7, wherein the chemical etching is performed in a solution of water and potassium hydroxide (KOH).

9. The method of forming a micro-mechanical pressure sensor as recited in claim 7, wherein the chemical etching is performed by deep reactive ion etching (DRIE).

10. The method of forming a micro-mechanical pressure sensor as recited in claim 7, wherein the bulk layer is formed in the first substrate to provide a natural termination for the chemical etching.

11. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the bulk layer is formed by the diffusion of boron in the first substrate at an elevated temperature.

12. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the conductive layer on the diaphragm is formed from at least one metal selected from the group consisting of aluminum, silver, tin, lead, copper, gold, platinum, palladium, nickel, chromium, titanium, and alloys thereof.

13. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the first and second substrates are bonded together using thermo-compression bonding.

14. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the first and second substrates are bonded together using eutectic bonding.

15. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein a top surface of the second substrate is polished in preparation for the formation of the counter electrode.

16. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the polishing of the top surface of the second electrode is mechanical polishing.

17. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the counter electrode is formed from at least one metal selected from the group consisting of aluminum, silver, tin, lead, copper, gold, platinum, palladium, nickel, chromium, titanium, and alloys thereof.

18. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the first masking layer is formed from a material selected from the group consisting of silicon dioxide, silicon nitride, and photoresist.

19. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the step of etching the cavity on the front side of the first substrate is performed using an etchant selected from the group consisting of potassium hydroxide (KOH), tetramethyl ammonium hydroxide (TMAH), cesium hydroxide (CsOH), ethylenediamene pyrocatecol (EDP), and deep reactive ion etching (DRIE).

20. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the step of etching the cavity on the back side of the first substrate is performed using an etchant selected from the group consisting of potassium hydroxide (KOH) and isoprophyalcohol (IPA), tetramethyl ammonium hydroxide (TMAH), cesium hydroxide (CsOH), ethylenediamene pyrocatecol (EDP), and deep reactive ion etching (DRIE).

21. The method of forming a micro-mechanical pressure sensor as recited in claim 1, wherein the first substrate is hermetically bonded to the second substrate.