Electronic device manufacture

• US 7,018,678 B2
• Filed: 06/03/2003
• Issued: 03/28/2006
• Est. Priority Date: 06/03/2002
• Status: Expired due to Fees

• Current Assignee: Shipley Company, LLC (Dow, Inc.)
• Original Assignee: Shipley Company, LLC (Dow, Inc.)
• Inventors: Prokopowicz, Gregory P., Gallagher, Michael K., Calvert, Jeffrey M., Adams, Timothy G., Gronbeck, Dana A.
• Primary Examiner(s): CAMERON, ERMA C
• Application Number:
  US10/453,337
• Publication Number:
  US 20040033700A1
• Time in Patent Office: 1,029 Days
• Field of Search: 427/387
• US Class Current: 427/387
• CPC Class Codes: C09D 183/04 Polysiloxanes
• CPC Class Codes: C09D 183/14 in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms C09D183/10 takes precedence
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: Y10T 428/249987 With nonvoid component of specified composition

Abstract

Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.

Claims

1. A method for depositing an organic polysilica cap layer on a dielectric material comprising the steps of:

a) disposing a cap layer composition on a dielectric material, the cap layer composition comprising one or more B-staged organic polysilica resins and one or more coating enhancers; and

b) at least partially curing the B-staged organic polysilica resin to form a cap layer;

wherein the coating enhancer is present in an amount sufficient to provide a pinhole-free cap layer and wherein the cap layer has an etch selectivity of 3;

1 greater as compared to the dielectric material.

2. The method of claim 1 wherein at least one coating enhancer is chosen from high boiling solvents, surfactants, removable polymers and mixtures thereof.

3. The method of claim 2 wherein the removable polymer is a polymeric porogen particle comprising as polymerized units at least one monomer chosen from silyl-containing monomers and poly(alkylene oxide) monomers.

4. The method of claim 3 wherein the removable polymer further comprises as polymerized units one or more cross-linking agents.

5. The method of claim 1 wherein the coating enhancer is present in an amount of >

3 to 25 wt %.

6. The method of claim 1 further comprising an organic solvent.

7. The method of claim 1 wherein the cap layer composition further comprises an inorganic compound chosen from silica, alumina, titania, ceria, zirconia and mixtures thereof.

8. The method of claim 1 wherein the dielectric material comprises an organic polysilica material.

9. The method of claim 1 further comprising the step of removing the one or more coating enhancers from the cap layer prior to or during the step of at least partially curing the organic polysilica resin.

10. The method of claim 1 wherein the dielectric material has a dielectric constant of ≦

3.

11. A method for manufacturing a device comprising the steps of:

a) providing a dielectric material;

b) disposing a cap layer composition on the dielectric material, the cap layer composition comprising one or more B-staged organic polysilica resins and one or more removable porogens; and

b) at least partially curing the one or more B-staged organic polysilica resin to form a cap layer;

wherein the one or more removable porogens are present in an amount sufficient to provide a pinhole-free cap layer, and wherein the can layer has an etch selectivity of 3;

1 or greater as compared to the dielectric material.

12. A method for depositing an organic polysilica cap layer on a dielectric material comprising the steps of:

a) disposing a cap layer composition on a dielectric material having a dielectric constant of ≦

3, the cap layer composition comprising one or more B-staged organic polysilica resins and one or more coating enhancers; and

b) at least partially curing the B-staged organic polysilica resin to form a cap layer;

wherein the coating enhancer is present in an amount sufficient to provide a pinhole-free cap layer, and wherein the cap layer has an etch selectivity of 3;

1 or greater as compared to the dielectric material.

13. The method of claim 12 wherein at least one coating enhancer is chosen from high boiling solvents, surfactants, removable polymers and mixtures thereof.

14. The method of claim 12 wherein the coating enhancer is present in an amount of 1 to 90 wt %.

15. The method of claim 12 further comprising the step of removing the one or more coating enhancers from the cap layer prior to or during the step of at least partially curing the organic polysilica resin.