Method for making a semiconductor device comprising a superlattice channel vertically stepped above source and drain regions
First Claim
1. A method for making a semiconductor device comprising:
- providing a semiconductor substrate; and
forming at least one metal oxide semiconductor field-effect transistor (MOSFET) byforming a superlattice channel comprising a plurality of stacked groups of layers on the semiconductor substrate, each group of layers of the superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, and the energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor,forming a gate overlying the superlattice channel, andforming source and drain regions in the semiconductor substrate on opposing sides of the superlattice channel so that the superlattice channel has upper surface portions vertically stepped above adjacent upper surface portions of the source and drain regions.
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Abstract
A method for making a semiconductor device may include providing a semiconductor substrate and forming at least one metal oxide semiconductor field-effect transistor (MOSFET). The at least one MOSFET may be formed by forming a superlattice channel including a plurality of stacked groups of layers on the semiconductor substrate. Each group of layers of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor. The method may further include forming a gate overlying the superlattice channel, and forming source and drain regions in the semiconductor substrate on opposing sides of the superlattice channel so that the superlattice channel has upper surface portions vertically stepped above adjacent upper surface portions of the source and drain regions.
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Citations
48 Claims
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1. A method for making a semiconductor device comprising:
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providing a semiconductor substrate; and forming at least one metal oxide semiconductor field-effect transistor (MOSFET) by forming a superlattice channel comprising a plurality of stacked groups of layers on the semiconductor substrate, each group of layers of the superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, and the energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor, forming a gate overlying the superlattice channel, and forming source and drain regions in the semiconductor substrate on opposing sides of the superlattice channel so that the superlattice channel has upper surface portions vertically stepped above adjacent upper surface portions of the source and drain regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for making a semiconductor device comprising:
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providing a semiconductor substrate; and forming at least one metal oxide semiconductor field-effect transistor (MOSFET) by forming a superlattice channel comprising a plurality of stacked groups of layers on the semiconductor substrate, each group of layers of the superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, and the energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor, forming a gate comprising a gate oxide layer overlying the superlattice channel and a gate electrode thereover, the superlattice channel being aligned with the gate electrode, forming an underlying portion of the substrate aligned with the superlattice channel, and forming source and drain regions in the semiconductor substrate on opposing sides of the superlattice channel so that the superlattice channel has upper surface portions vertically stepped above adjacent upper surface portions of the source and drain regions. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A method for making a semiconductor device comprising:
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providing a semiconductor substrate; and forming at least one metal oxide semiconductor field-effect transistor (MOSFET) by forming a superlattice channel comprising a plurality of stacked groups of layers on the semiconductor substrate, each group of layers of the superlattice channel comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, and the energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor, forming a gate comprising a gate oxide layer overlying the superlattice channel, a gate electrode thereover, and sidewall spacers on opposing sides of the gate electrode, the superlattice channel being aligned with the sidewall spacers, and forming an underlying portion of the substrate aligned with the superlattice channel, and forming source and drain regions in the semiconductor substrate on opposing sides of the superlattice channel so that the superlattice channel has upper surface portions vertically stepped above adjacent upper surface portions of the source and drain regions. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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Specification