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Post treatment of low k dielectric films

  • US 7,018,941 B2
  • Filed: 04/21/2004
  • Issued: 03/28/2006
  • Est. Priority Date: 04/21/2004
  • Status: Active Grant
First Claim
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1. A method of processing a substrate, comprising:

  • depositing a low dielectric constant film comprising silicon and carbon on a substrate in the presence of RF power; and

    post-treating the depositing low dielectric constant film by a process comprising;

    heating the low dielectric constant film to a desired temperature of at least about 600°

    C. at a rate of at least about 10°

    C./sec, wherein the low dielectric constant film is maintained at the desired temperature for about five seconds or less; and

    then cooling the low dielectric constant film at a rate of at least about 10°

    C./sec.

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