Post treatment of low k dielectric films
First Claim
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1. A method of processing a substrate, comprising:
- depositing a low dielectric constant film comprising silicon and carbon on a substrate in the presence of RF power; and
post-treating the depositing low dielectric constant film by a process comprising;
heating the low dielectric constant film to a desired temperature of at least about 600°
C. at a rate of at least about 10°
C./sec, wherein the low dielectric constant film is maintained at the desired temperature for about five seconds or less; and
then cooling the low dielectric constant film at a rate of at least about 10°
C./sec.
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Abstract
A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.
555 Citations
20 Claims
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1. A method of processing a substrate, comprising:
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depositing a low dielectric constant film comprising silicon and carbon on a substrate in the presence of RF power; and
post-treating the depositing low dielectric constant film by a process comprising;
heating the low dielectric constant film to a desired temperature of at least about 600°
C. at a rate of at least about 10°
C./sec, wherein the low dielectric constant film is maintained at the desired temperature for about five seconds or less; and
thencooling the low dielectric constant film at a rate of at least about 10°
C./sec. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of processing a substrate, comprising:
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depositing a low dielectric constant film comprising silicon and carbon on a substrate in the presence of RF power; and
post-treating the deposited low dielectric constant film by a process comprising;
heating the low dielectric constant film from a temperature of between about 25°
C. and about 250°
C. to a temperature of between about 600°
C. and about 1000°
C., wherein the low dielectric constant film is heated at the temperature of between about 600°
C. and about 1000°
C. for about five seconds or less; and
thencooling the low dielectric constant film from a temperature of between about 600°
C. and about 1000°
C., wherein the low dielectric constant film is heated and cooled within a time period of about 0.5 minutes to about 5 minutes. - View Dependent Claims (13, 14, 15, 16)
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17. A method of processing a substrate, comprising:
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depositing a low dielectric constant film comprising silicon and carbon on a substrate in the presence of RF power; and
post-treating the deposited low dielectric constant film by a process comprising;
heating the low dielectric constant film to a desired temperature at a rate of at least about 10°
C./sec, wherein the low dielectric constant film is maintained at the desired temperature for about five seconds or less; and
thencooling the low dielectric constant film at a rate of at least about 10°
C./sec, wherein the low dielectric constant film is heated and cooled within a time period of about 0.5 minutes to about 5 minutes. - View Dependent Claims (18, 19, 20)
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Specification