Deformable mirror method and apparatus including bimorph flexures and integrated drive

• US 7,019,434 B2
• Filed: 11/07/2003
• Issued: 03/28/2006
• Est. Priority Date: 11/08/2002
• Status: Expired due to Fees

• Current Assignee: Iris Ao, Inc.
• Original Assignee: Iris Ao, Inc.
• Inventors: Helmbrecht, Micheal Albert
• Primary Examiner(s): Wood, Kimberly
• Assistant Examiner(s): STERLING, AMY JO
• Application Number:
  US10/703,391
• Publication Number:
  US 20040165243A1
• Time in Patent Office: 872 Days
• Field of Search: 248/346.01, 248/548, 248/549, 248/466, 248/474, 248/476, 310/309, 310/306, 310/32, 359/223, 359/224
• US Class Current: 310/309
• CPC Class Codes: G02B 26/06 for controlling the phase of light G02B26/08 takes precedence , measuring optical phase difference G01J9/00
• CPC Class Codes: G02B 26/0825 the reflecting element being a flexible sheet or membrane, e.g. for varying the focus flexible mirrors for cosmetic use A45D42/24

Abstract

An apparatus comprising a substrate; and a platform elevated above the substrate and supported by curved flexures. The curvature of said flexures results substantially from variations in intrinsic residual stress within said flexures. In one embodiment the apparatus is a deformable mirror exhibiting low temperature-dependence, high stroke, high control resolution, large number of degrees of freedom, reduced pin count and small form-factor. Structures and methods of fabrication are disclosed that allow the elevation of mirror segments to remain substantially constant over a wide operating temperature range. Methods are also disclosed for integrating movable mirror segments with control and sense electronics to a produce small-form-factor deformable mirror.

Claims

1. A microelectromechanical (MEMS) structure on a substrate, comprising:

a platform connected with a set of one or more bimorph flexures; and

the set of bimorph flexures connecting the platform with the substrate, each bimorph flexure comprising a first layer comprised of a first material and a second layer comprised of a second material, the first and second materials having particular intrinsic residual stress (IRS) characteristics and coefficients of thermal expansion (CTEs), each bimorph flexure having a curvature resulting from a first component proportional to the difference in IRS characteristics of the first and second materials and a second component proportional to the difference in CTEs of the first and second materials, the first component being larger than the second component.

2. The MEMS structure of claim 1, wherein the curvature of each bimorph flexure results predominantly from the first component.

3. The MEMS structure of claim 1, wherein the curvature of each bimorph flexure is not substantially sensitive to changes in temperature.

4. The MEMS structure of claim 1, wherein, the first component is larger than the second component by a factor of approximately one thousand or more.

5. The MEMS structure of claim 4, wherein the first component is larger than the second component by a factor of approximately one thousand or more at normal operating temperatures of the MEMS structure.

6. The MEMS structure of claim 1, wherein the first material comprises silicon and the second material comprises silicon nitride, or the first material comprises polysilicon and the second material comprises ceramic, SiC, or silicon nitride (SixNy).

7. The MEMS structure of claim 1, wherein the second layer extends over a portion of the first layer that is less than the entire length of the first layer, the second layer being affixed to the first layer along the entire length of the second layer.

8. The MEMS structure of claim 7, wherein the second layer provides a residual stress difference between the top and bottom portions of the first layer.

9. The MEMS structure of claim 1, wherein:

the set of bimorph flexures elevates the platform above the substrate; and

the platform is an actuator segment or mirror segment.

10. The MEMS structure of claim 1, wherein the first and second layers are formed under conditions that produce substantially different IRS characteristics in the first and second materials.

11. The MEMS structure of claim 1, wherein the first and second materials comprise polysilicon.