Variable programming of non-volatile memory
First Claim
1. A method of programming non-volatile memory, comprising:
- programming a first set of one or more non-volatile storage elements to a first physical state; and
programming a second set of one or more non-volatile storage elements to said first physical state, said first physical state includes a lower minimum voltage for said second set of one or more non-volatile storage elements than for said first set of one or more non-volatile storage elements.
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Accused Products
Abstract
Systems and methods in accordance with various embodiments can provide for reduced program disturb in non-volatile semiconductor memory. In one embodiment, select memory cells such as those connected to a last word line of a NAND string are programmed using one or more program verify levels or voltages that are different than a corresponding level used to program other cells or word lines. One exemplary embodiment includes using a lower threshold voltage verify level for select physical states when programming the last word line to be programmed for a string during a program operation. Another embodiment includes applying a lower program voltage to program memory cells of the last word line to select physical states. Additional read levels are established for reading the states programmed using lower verify levels in some exemplary implementations. A second program voltage step size that is larger than a nominal step size is used in one embodiment when programming select memory cells or word lines, such as the last word line to be programmed for a NAND string.
860 Citations
43 Claims
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1. A method of programming non-volatile memory, comprising:
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programming a first set of one or more non-volatile storage elements to a first physical state; and programming a second set of one or more non-volatile storage elements to said first physical state, said first physical state includes a lower minimum voltage for said second set of one or more non-volatile storage elements than for said first set of one or more non-volatile storage elements. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of programming non-volatile memory, comprising:
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programming a first set of one or more non-volatile storage elements to a first physical state using a first target minimum voltage for said first physical state; and programming a second set of one or more non-volatile storage elements to said first physical state using a second target minimum voltage for said first physical state, said second target minimum voltage is below said first target minimum voltage. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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25. A non-volatile memory system, comprising:
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a set of non-volatile storage elements, said set of non-volatile storage elements includes a first subset of non-volatile storage elements storing data through a first set of physical states and a second subset of non-volatile storage elements storing data through said first set of physical states, one or more of said first set of physical states are at lower voltages for said second subset of non-volatile storage elements than for said first subset of non-volatile storage elements; and managing circuitry in communication with said non-volatile storage elements. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
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33. A non-volatile memory system, comprising:
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a first set of storage elements coupled to a first word line, said first set of storage elements having a first set of physical states; a second set of storage elements coupled to a second word line, said second word line being programmed subsequent to said first word line during a program operation, said second set of storage elements having said first set of physical states; a managing circuit adapted to program said first set of storage elements and said second set of storage elements, said managing circuit programs said first set of storage elements to one or more of said first set of physical states using one or more first target minimum voltages for said first set of physical states, said managing circuit programs said second set of storage elements to said one or more of said first set of physical states using one or more second target minimum voltages for said first set of physical states, said one or more second target minimum voltages are lower than said one or more first target minimum voltages. - View Dependent Claims (34, 35)
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36. A non-volatile memory system, comprising:
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means for programming a first set of one or more non-volatile storage elements to a first physical state using a first target minimum voltage for said first physical state; and means for programming a second set of one or more non-volatile storage elements to said first physical state using a second target minimum voltage for said first physical state, said second target minimum voltage is below said first target minimum voltage.
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37. A method of programming non-volatile memory, comprising:
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programming a first non-volatile storage element to a first physical state; verifying programming of said first non-volatile storage element to said first physical state using a first value of a verification parameter to determine whether said first non-volatile storage element has reached said first physical state; programming a second non-volatile storage element to said first physical state; and verifying programming of said second non-volatile storage element to said first physical state using a second value of said verification parameter to determine whether said second non-volatile storage element has reached said first physical state. - View Dependent Claims (38, 39, 40)
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41. A method of programming non-volatile memory, comprising:
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applying a program voltage to a non-volatile storage element coupled to a first word line, said non-volatile storage element is part of a string of non-volatile storage elements; determining whether said non-volatile storage element is programmed to a target state; and increasing said program voltage and applying said increased program voltage to said non-volatile storage element if said non-volatile storage element is not programmed to said target state, said step of increasing includes increasing said program voltage by a first amount if said first word line is a last word line to be programmed for said string during a program operation, and increasing said program voltage by a second amount if said first word line is not a last word line to be programmed for said string during a program operation. - View Dependent Claims (42, 43)
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Specification