Method of removing a via fence

• US 7,021,320 B2
• Filed: 04/11/2003
• Issued: 04/04/2006
• Est. Priority Date: 04/11/2003
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lee, Chou-Feng
• Primary Examiner(s): Goudreau, George A.
• Application Number:
  US10/411,799
• Publication Number:
  US 20040200803A1
• Time in Patent Office: 1,089 Days
• Field of Search: 134/1.3, 216/57, 216/67, 438/704, 438/710, 438/745, 438/725, 438/687
• US Class Current: 134/1.3
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors

Abstract

A method of fabricating a dual damascene structure includes etching a via through a first dielectric layer above a substrate, a barrier layer on the first dielectric layer, and a second dielectric layer on the barrier layer. The via is at least partially filled with a photoresist plug. The plug is etched back. A trench is etched through the second dielectric layer. The trench is aligned with the via. The substrate having the first and second dielectric layers thereon is wet with an acid for a sufficient length of time to remove a via fence formed in the trench. The via and the trench are filled with metal.

Claims

1. In a damascene process of fabricating an interconnect structure in an integrated circuit, a method for removing a via fence, comprising the steps of:

etching back a plug in the interconnect structure using a plug etch back time that is short enough to substantially eliminate a probability of forming a via facet, while providing a high probability of forming a via fence; and

wetting the interconnect structure with an acid for a sufficient length of time to remove the via fence.

2. The method of claim 1, wherein the acid includes HF.

3. The method of claim 2, wherein the acid further includes BOE, CH₃COOH and deionized water.

4. The method of claim 3, wherein the ratio of HF, BOE, CH₃COOH and deionized water in the acid is 1:

14;

10;

3.

5. The method of claim 3, wherein the length of time is approximately 1.5 seconds.

6. The method of claim 1, further comprising removing a photoresist plug from the interconnect structure using a plug etch back over etch time between about 100 seconds and about 155 seconds.

7. A method of fabricating a dual damascene structure, comprising the steps of:

(a);

etching a via through a first dielectric layer above a substrate, a barrier layer on the first dielectric layer, and a second dielectric layer on the barrier layer;

(b);

at least partialy filling the via with a photoresist plug;

(c);

etching back the plug using a plug etch back time that is short enough to substantially eliminate a probability of forming a via facet, while providing a high probability of forming a via fence;

(d);

etching a trench through the second dielectric layer, the trench aligned with the via;

(e);

wetting the substrate having the first and second dielectric layers thereon with an acid for a sufficient length of time to remove the via fence formed in the trench; and

(f);

filling the via and the trench with metal.

8. The method of claim 7, wherein the acid includes HF.

9. The method of claim 8, wherein the acid further includes sufficient BOE, CH₃COOH and deionized water to prevent an excessive etch rate.

10. The method of claim 9, wherein the ratio of HF, BOE, CH₃COOH and deionized water in the acid is 1:

14;

10;

3.

11. The method of claim 8, wherein the length of time is approximately 1.5 seconds.

12. The method of claim 8, step (c):

uses a plug etch-back over etch time between about 100 seconds and about 155 seconds.

13. The method of claim 8, wherein the plug has a height of about 1200 Å

.