Nitrogen passivation of interface states in SiO2/SiC structures
First Claim
1. A method of processing a nitrided oxide layer on a silicon carbide layer, the method comprising:
- annealing the nitrided oxide layer in a substantially oxygen-free nitrogen containing ambient, wherein the substantially oxygen-free nitrogen containing ambient comprises a NH3 containing ambient, wherein the substantially oxygen-free nitrogen containing ambient comprises NH3 and SiH4.
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Abstract
A nitrided oxide layer on a silicon carbide layer is processed by annealing the nitrided oxide layer in a substantially oxygen-free nitrogen containing ambient. The anneal may be carried out at a temperature of greater than about 900° C., for example, a temperature of about 1100° C., a temperature of about 1200° C. or a temperature of about 1300° C. Annealing the nitrided oxide layer may be carried out at a pressure of less than about 1 atmosphere, for example, at a pressure of from about 0.01 to about 1 atm or, in particular, at a pressure of about 0.2 atm. The nitrided oxide layer may be an oxide layer that is grown in a N2O and/or NO containing ambient, that is annealed in a N2O and/or NO containing ambient or that is grown and annealed in a N2O and/or NO containing ambient.
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6 Claims
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1. A method of processing a nitrided oxide layer on a silicon carbide layer, the method comprising:
annealing the nitrided oxide layer in a substantially oxygen-free nitrogen containing ambient, wherein the substantially oxygen-free nitrogen containing ambient comprises a NH3 containing ambient, wherein the substantially oxygen-free nitrogen containing ambient comprises NH3 and SiH4. - View Dependent Claims (2, 3, 4, 5, 6)
Specification