Method for making a semiconductor die package
First Claim
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1. A method for forming a semiconductor die package, the method comprising:
- a) providing a mask having an aperture on a semiconductor substrate, wherein a conductive region is on the semiconductor substrate and the aperture in the mask is disposed over the conductive region;
b) placing a pre-formed conductive column within the aperture; and
c) bonding the pre-formed conductive column to the conductive region, wherein the pre-formed conductive column has substantially the same shape before and after bonding.
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Abstract
A method for processing a semiconductor substrate is disclosed. The method includes providing a mask having an aperture on a semiconductor substrate having a conductive region. An aperture in the mask is disposed over the conductive region. A pre-formed conductive column is placed in the aperture and is bonded to the conductive region.
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Citations
13 Claims
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1. A method for forming a semiconductor die package, the method comprising:
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a) providing a mask having an aperture on a semiconductor substrate, wherein a conductive region is on the semiconductor substrate and the aperture in the mask is disposed over the conductive region; b) placing a pre-formed conductive column within the aperture; and c) bonding the pre-formed conductive column to the conductive region, wherein the pre-formed conductive column has substantially the same shape before and after bonding. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for forming a semiconductor die package, the method comprising:
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a) forming a passivation layer comprising a first aperture on a conductive region on a semiconductor substrate, wherein the aperture in the mask is disposed over the conductive region; b) forming an adhesion layer on the passivation layer and on the conductive region; c) forming a seed layer on the adhesion layer; d) forming a patterned photoresist layer comprising a second aperture on the passivation layer, wherein the second aperture is over the conductive region and is aligned with the first aperture; e) electroplating a conductive layer within the second aperture and on the seed layer; f) depositing solder paste containing a flux within the second aperture and on the electroplated conductive layer; g) inserting a pre-formed conductive column into the second aperture; h) placing the pre-formed conductive column on the conductive layer within the second aperture; i) removing the patterned photoresist layer; j) etching portions of the adhesion layer and the seed layer disposed around the bonded pre-formed conductive column; and k) heating the solder paste to bond the pre-formed conductive column to the conductive region on the semiconductor substrate. - View Dependent Claims (12, 13)
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Specification