Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
First Claim
1. A light-emitting semiconductor device comprising:
- a blue-light-emitting diode which emits blue light, the blue-light-emitting diode having a light extraction surface; and
a luminescent layer which includes a yellow/yellowish phosphor that absorbs blue light emitted by the blue-light-emitting diode to emit a yellow/yellowish fluorescence,wherein the luminescent layer is exposed on the blue-light-emitting diode,the yellow/yellowish phosphor contains a compound expressed by the chemical formula;
(Sr1−
a1−
b2−
xBaa1Cab2Eux)2SiO4(where 0≦
a1≦
0.3, 0≦
b2≦
0.6, 0.005 <
x<
0.1),the yellow/yellowish phosphor has a particle size in the range from 0.5 μ
m to 30 μ
m, both inclusive, and is made of a silicate phosphor having an orthorhombic structure, anda portion of the luminescent layer located at least on the light extraction surface of the blue-light-emitting diode has a substantial thickness in the range from 50 μ
m to 1000 μ
m, both inclusive.
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Accused Products
Abstract
A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1−a1−b1−xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.
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Citations
19 Claims
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1. A light-emitting semiconductor device comprising:
-
a blue-light-emitting diode which emits blue light, the blue-light-emitting diode having a light extraction surface; and a luminescent layer which includes a yellow/yellowish phosphor that absorbs blue light emitted by the blue-light-emitting diode to emit a yellow/yellowish fluorescence, wherein the luminescent layer is exposed on the blue-light-emitting diode, the yellow/yellowish phosphor contains a compound expressed by the chemical formula;
(Sr1−
a1−
b2−
xBaa1Cab2Eux)2SiO4(where 0≦
a1≦
0.3, 0≦
b2≦
0.6, 0.005 <
x<
0.1),the yellow/yellowish phosphor has a particle size in the range from 0.5 μ
m to 30 μ
m, both inclusive, and is made of a silicate phosphor having an orthorhombic structure, anda portion of the luminescent layer located at least on the light extraction surface of the blue-light-emitting diode has a substantial thickness in the range from 50 μ
m to 1000 μ
m, both inclusive.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
(where 0≦
a3≦
1, 0≦
b3≦
1, 0<
x<
1).
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14. The light-emitting semiconductor device of claim 10, wherein the luminescent layer includes a plurality of said silicate phosphors each of which emits yellow/yellowish light having a main emission peak in the wavelength range from 550 nm to 600 nm, both inclusive and mutually differs in composition.
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15. The light-emitting semiconductor device of claim 10, wherein the blue-light-emitting diode is a flip-chip-type blue-light-emitting diode,
the flip-chip-type blue-light-emitting diode is mounted on a submount element to be electrically connected thereto, and the luminescent layer within which particles of the yellow/yellowish phosphor exist encapsulates the flip-chip-type blue-light-emitting diode. -
16. The light-emitting semiconductor device of claim 10, wherein the blue-light-emitting diode is mounted in a cup provided in a mount lead to be electrically connected to the cup,
the luminescent layer within which particles of the yellow/yellowish phosphor exist is provided in the cup. -
17. The light-emitting semiconductor device of claim 10, wherein the blue-light-emitting diode is placed in a casing, and
the luminescent layer within which particles of the yellow/yellowish phosphor exist is provided in the casing. -
18. The light-emitting semiconductor device of claim 10, wherein the surface of the portion of the luminescent layer located at least on the main light-extracting surface of the blue-light-emitting diode is flat and parallel to the main light-extracting surface.
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19. A light-emitting semiconductor system comprising the light-emitting semiconductor device of claim 1.
Specification