Semiconductor device and method of manufacturing the same
First Claim
Patent Images
1. A semiconductor device comprising:
- a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region, and a channel formation region interposed therebetween;
a first insulating film formed on said semiconductor layer;
at least one electrode formed on said first insulating film, and overlapping said channel formation region;
a source wiring formed on said first insulating film;
a second insulating film covering at least said at least one electrode and said source wiring; and
a gate wiring formed over said second insulating film, and connected to said at least one electrode.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.
-
Citations
44 Claims
-
1. A semiconductor device comprising:
-
a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region, and a channel formation region interposed therebetween; a first insulating film formed on said semiconductor layer; at least one electrode formed on said first insulating film, and overlapping said channel formation region; a source wiring formed on said first insulating film; a second insulating film covering at least said at least one electrode and said source wiring; and a gate wiring formed over said second insulating film, and connected to said at least one electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A semiconductor device comprising:
-
a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region, and a channel formation region interposed therebetween; a first insulating film formed on said semiconductor layer; at least one electrode formed on said first insulating film, and overlapping said channel formation region; a source wiring formed on said first insulating film; a second insulating film covering at least said at least one electrode and said source wiring; a gate wiring formed over said second insulating film, and connected to said at least one electrode; a connection electrode formed over said second insulating film, and connected to said source wiring and said semiconductor layer; and a pixel electrode formed over said second insulating film, and electrically connected to said semiconductor layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
-
21. A semiconductor device comprising:
-
a semiconductor layer and at least one electrode including a gate electrode adjacent to said semiconductor layer with a first insulating film interposed therebetween; a source wiring formed on said first insulating film; a second insulating film covering at least said at least one electrode and said source wiring; a gate wiring formed over said second insulating film, and electrically connected to said at least one electrode; and a pixel electrode electrically connected to said semiconductor layer, wherein said pixel electrode is formed over said second insulating film. - View Dependent Claims (22, 23, 24, 25, 26, 27)
-
-
28. A semiconductor device comprising a pair of substrates and a liquid crystal interposed therebetween, one of said pair of substrates having at least a pixel portion and a driver circuit, said pixel portion comprising:
-
a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region and a channel formation region interposed therebetween; a first insulating film formed on said semiconductor layer; at least one electrode formed on said first insulating film, and overlapping at least said channel formation region; a source wiring formed on said first insulating film; a second insulating film covering at least said at least one electrode and said source wiring; a gate wiring formed over said second insulating film, and connected to said at least one electrode; a connection electrode formed over said second insulating film, and connected to said source wiring and said semiconductor layer; and a pixel electrode formed over said second insulating film, and electrically connected to said semiconductor layer, and wherein the other one of said pair of substrates comprises a light-shielding film in which a red color filter and a blue color filter are laminated so as to overlap said semiconductor layer. - View Dependent Claims (29, 30, 31, 32)
-
-
33. A semiconductor device comprising a pair of substrates and a liquid crystal interposed therebetween, one of said pair of substrates having at least a pixel portion and a driver circuit, said pixel portion comprising:
-
a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region and a channel formation region interposed therebetween; a first insulating film formed on said semiconductor layer; at least one electrode formed on said first insulating film, and overlapping at least said channel formation region; a source wiring formed on said first insulating film; a second insulating film covering at least said at least one electrode and said source wiring; a gate wiring formed over said second insulating film, and connected to said at least one electrode; and a pixel electrode formed over said second insulating film, and electrically connected to said semiconductor layer. - View Dependent Claims (34, 35, 36, 37)
-
-
38. A semiconductor device comprising:
-
a semiconductor layer formed over an insulating substrate; at least one electrode adjacent to said semiconductor layer with a first insulating film interposed therebetween; a source wiring formed on said first insulating film; a second insulating film covering at least said at least one electrode and said source wiring; and a gate wiring formed over said second insulating film, and electrically connected to said at least one electrode. - View Dependent Claims (39, 40, 41, 42, 43, 44)
-
Specification