Semiconductor device and method of manufacturing the same

• US 7,023,021 B2
• Filed: 02/02/2001
• Issued: 04/04/2006
• Est. Priority Date: 02/22/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Yamazaki, Shunpei
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): MANDALA, VICTOR A
• Application Number:
  US09/773,543
• Publication Number:
  US 20010030322A1
• Time in Patent Office: 1,887 Days
• Field of Search: 257/98, 257/350, 257/59, 257/70, 257/72, 257/627, 257/79, 438/149
• US Class Current: 257/98
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/133784 by rubbing
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/134336 Matrix
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 : with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 : integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1274 : using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
• CPC Class Codes: H01L 27/1288 : employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/42384 : for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/458 : for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 : for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/786 : Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78621 : with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 : with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H01L 29/78633 : with a light shield
• CPC Class Codes: H01L 29/78645 : with multiple gate
• CPC Class Codes: H01L 29/78675 : with normal-type structure, e.g. with top gate

Abstract

The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.

Claims

1. A semiconductor device comprising:

a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region, and a channel formation region interposed therebetween;

a first insulating film formed on said semiconductor layer;

at least one electrode formed on said first insulating film, and overlapping said channel formation region;

a source wiring formed on said first insulating film;

a second insulating film covering at least said at least one electrode and said source wiring; and

a gate wiring formed over said second insulating film, and connected to said at least one electrode.

2. A semiconductor device according to claim 1, wherein said gate wiring overlaps a portion of said semiconductor layer containing at least said channel formation region.

3. A semiconductor device according to claim 1, wherein said at least one electrode comprises a gate electrode.

4. A semiconductor device according to claim 1, wherein said at least one electrode and said source wiring comprise a same material.

5. A semiconductor device according to claim 1, wherein a material of said gate wiring comprises one or a plurality of elements selected from the group consisting of poly-Si, W, WSi_x, Al, Cu, Ta, Cr and Mo.

6. A semiconductor device according to claim 1, wherein said first insulating film comprises a gate insulating film.

7. A semiconductor device according to claim 1, wherein said second insulating film further comprises a first insulating layer containing silicon as a main component and a second insulating layer containing an organic resin material.

8. A semiconductor device according to claim 1, wherein said semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, a portable telephone, an electronic book, a projector, a head mounted type display, and an electric game appliance.

9. A semiconductor device comprising:

a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region, and a channel formation region interposed therebetween;

a first insulating film formed on said semiconductor layer;

at least one electrode formed on said first insulating film, and overlapping said channel formation region;

a source wiring formed on said first insulating film;

a second insulating film covering at least said at least one electrode and said source wiring;

a gate wiring formed over said second insulating film, and connected to said at least one electrode;

a connection electrode formed over said second insulating film, and connected to said source wiring and said semiconductor layer; and

a pixel electrode formed over said second insulating film, and electrically connected to said semiconductor layer.

10. A semiconductor device according to claim 9, wherein said pixel electrode overlaps said source wiring.

11. A semiconductor device according to claim 9, wherein said gate wiring overlaps a portion of said semiconductor layer containing at least said channel formation region.

12. A semiconductor device according to claim 9, wherein said at least one electrode comprises a gate electrode.

13. A semiconductor device according to claim 9, wherein said at least one electrode and said source wiring comprise a same material.

14. A semiconductor device according to claim 9, wherein said pixel electrode, said connection electrode and said gate wiring comprise a same material.

15. A semiconductor device according to claim 9, wherein a material of said gate wiring comprises one or a plurality of elements selected from the group consisting of poly-Si, W, WSi_x, Al, Cu, Ta, Cr and Mo.

16. A semiconductor device according to claim 9, wherein said first insulating film comprises a gate insulating film.

17. A semiconductor device according to claim 9, wherein said second insulating film further comprises a first insulating layer containing silicon as a main component and a second insulating layer containing an organic resin material.

18. A semiconductor device according to claim 9, wherein one pixel including said pixel electrode forms a storage capacitor between said semiconductor layer connected to said pixel electrode and said at least one electrode connected to a gate wiring of an adjacent pixel, using said first insulating film as a dielectric.

19. A semiconductor device according to claim 9, wherein an impurity element for imparting a p-type conductivity is added to said semiconductor layer connected to said pixel electrode.

20. A semiconductor device according to claim 9, said semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, a portable telephone, an electronic book, a projector, a head mounted type display, and an electric game appliance.

21. A semiconductor device comprising:

a semiconductor layer and at least one electrode including a gate electrode adjacent to said semiconductor layer with a first insulating film interposed therebetween;

a source wiring formed on said first insulating film;

a second insulating film covering at least said at least one electrode and said source wiring;

a gate wiring formed over said second insulating film, and electrically connected to said at least one electrode; and

a pixel electrode electrically connected to said semiconductor layer,

wherein said pixel electrode is formed over said second insulating film.

22. A semiconductor device according to claim 21, wherein said gate wiring overlaps a portion of said semiconductor layer containing at least said channel formation region.

23. A semiconductor device according to claim 21, wherein said at least one electrode and said source wiring comprise a same material.

24. A semiconductor device according to claim 21, wherein a material of said gate wiring comprises one or a plurality of elements selected from the group consisting of poly-Si, W, WSi_x, Al, Cu, Ta, Cr and Mo.

25. A semiconductor device according to claim 21, wherein said first insulating film comprises a gate insulating film.

26. A semiconductor device according to claim 21, wherein said second insulating film further comprises a first insulating layer containing silicon as a main component and a second insulating layer containing an organic resin material.

27. A semiconductor device according to claim 21, wherein said semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, a portable telephone, an electronic book, a projector, a head mounted type display, and an electric game appliance.

28. A semiconductor device comprising a pair of substrates and a liquid crystal interposed therebetween, one of said pair of substrates having at least a pixel portion and a driver circuit, said pixel portion comprising:

a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region and a channel formation region interposed therebetween;

a first insulating film formed on said semiconductor layer;

at least one electrode formed on said first insulating film, and overlapping at least said channel formation region;

a source wiring formed on said first insulating film;

a second insulating film covering at least said at least one electrode and said source wiring;

a gate wiring formed over said second insulating film, and connected to said at least one electrode;

a connection electrode formed over said second insulating film, and connected to said source wiring and said semiconductor layer; and

a pixel electrode formed over said second insulating film, and electrically connected to said semiconductor layer, and

wherein the other one of said pair of substrates comprises a light-shielding film in which a red color filter and a blue color filter are laminated so as to overlap said semiconductor layer.

29. A semiconductor device according to claim 28, further comprising a common wiring on said second insulating film, wherein said pixel electrode and said common wiring are arranged so that an electric field substantially parallel to a surface of said substrate is generated.

30. A semiconductor device according to claim 28, said semiconductor device is a reflection-type liquid crystal display device in which said pixel electrode comprises a film containing Al or Ag or a lamination film thereof.

31. A semiconductor device according to claim 28, said semiconductor device is a transmission-type liquid crystal display device in which said pixel electrode comprises a transparent electrically conductive film.

32. A semiconductor device according to claim 28, said semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, a portable telephone, an electronic book, a projector, a head mounted type display, and an electric game appliance.

33. A semiconductor device comprising a pair of substrates and a liquid crystal interposed therebetween, one of said pair of substrates having at least a pixel portion and a driver circuit, said pixel portion comprising:

a semiconductor layer formed on an insulating surface, and having at least a source region, a drain region and a channel formation region interposed therebetween;

a first insulating film formed on said semiconductor layer;

at least one electrode formed on said first insulating film, and overlapping at least said channel formation region;

a source wiring formed on said first insulating film;

a second insulating film covering at least said at least one electrode and said source wiring;

a gate wiring formed over said second insulating film, and connected to said at least one electrode; and

a pixel electrode formed over said second insulating film, and electrically connected to said semiconductor layer.

34. A semiconductor device according to claim 33, further comprising a common wiring on said second insulating film, wherein said pixel electrode and said common wiring are arranged so that an electric field substantially parallel to a surface of said substrate is generated.

35. A semiconductor device according to claim 33, said semiconductor device is a reflection-type liquid crystal display device in which said pixel electrode comprises a film containing Al or Ag or a lamination film thereof.

36. A semiconductor device according to claim 33, said semiconductor device is a transmission-type liquid crystal display device in which said pixel electrode comprises a transparent electrically conductive film.

37. A semiconductor device according to claim 33, said semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, a portable telephone, an electronic book, a projector, a head mounted type display, and an electric game appliance.

38. A semiconductor device comprising:

a semiconductor layer formed over an insulating substrate;

at least one electrode adjacent to said semiconductor layer with a first insulating film interposed therebetween;

a source wiring formed on said first insulating film;

a second insulating film covering at least said at least one electrode and said source wiring; and

a gate wiring formed over said second insulating film, and electrically connected to said at least one electrode.

39. A semiconductor device according to claim 38, wherein said gate wiring overlaps a portion of said semiconductor layer containing at least a channel formation region.

40. A semiconductor device according to claim 38, wherein said at least one electrode and said source wiring comprise a same material.

41. A semiconductor device according to claim 38, wherein a material of said gate wiring comprises one or a plurality of elements selected from the group consisting of poly-Si, W, WSi_x, Al, Cu, Ta, Cr and Mo.

42. A semiconductor device according to claim 38, wherein said first insulating film comprises a gate insulating film.

43. A semiconductor device according to claim 38, wherein said second insulating film further comprises a first insulating layer containing silicon as a main component and a second insulating layer containing an organic resin material.

44. A semiconductor device according to claim 38, wherein said semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, a portable telephone, an electronic book, a projector, a head mounted type display, and an electric game appliance.