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Capacitive resonators and methods of fabrication

  • US 7,023,065 B2
  • Filed: 07/31/2003
  • Issued: 04/04/2006
  • Est. Priority Date: 08/07/2002
  • Status: Expired due to Term
First Claim
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1. A method for fabricating micro-electro-mechanical system (MEMS) capacitive resonators, the method comprising:

  • forming trenches in a semiconductor-on-insulator substrate;

    conformally coating sidewalls of the trenches with an oxide;

    filling the coated trenches with polysilicon, wherein electrodes are derived from the polysilicon;

    forming release openings and removing the polysilicon and at least a portion of the semiconductor-on-silicon substrate; and

    removing the conformally coated oxide and an oxide of the semiconductor-on-insulator substrate, wherein a capacitive gap is formed, wherein a resonating element of one of the capacitive resonators is released.

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