Magnetoelectric magnetic field sensor with longitudinally biased magnetostrictive layer

• US 7,023,206 B2
• Filed: 10/20/2003
• Issued: 04/04/2006
• Est. Priority Date: 10/18/2002
• Status: Expired due to Fees

• Current Assignee: Virginia Tech Intellectual Properties, Inc.
• Original Assignee: Virginia Tech Intellectual Properties, Inc.
• Inventors: Viehland, Dwight, Li, Jie-Fang, Dong, Shu-Xiang
• Primary Examiner(s): LEDYNH, BOT L
• Application Number:
  US10/687,970
• Publication Number:
  US 20040126620A1
• Time in Patent Office: 897 Days
• Field of Search: 324/109, 324/151.R, 324173-174, 324/244, 324/249, 324260-263
• US Class Current: 324/249
• CPC Class Codes: G01R 33/02 Measuring direction or magnitude of magnetic fields or magnetic flux G01R33/20 takes precedence
• CPC Class Codes: H10N 30/00 Piezoelectric or electrostrictive devices integrated devices or assemblies of multiple devices H10N39/00

Abstract

A magnetoelectric magnetic field sensor has one or more laminated magnetostrictive layers and piezoelectric layers. The magnetostrictive layers are magnetized by a bias magnetic field in a longitudinal, in-plane direction. The piezoelectric layers can be poled in the longitudinal direction or perpendicular direction. The longitudinal magnetization of the magnetostrictive layers provides greatly increased sensitivity at lower bias fields compared to other magnetoelectric sensors. Perpendicular poling of the piezoelectric layers tends to provide higher sensitivity at lower detection frequency (e.g. less than 1 Hz). Longitudinal poling tends to provide higher sensitivity at high detection frequency (e.g. above 10 Hz). Also included are embodiments having relative thicknesses for the magnetostrictive layers that are optimized for sensitivity. Equations are provided for calculating the best relative thickness for the magnetostrictive layer for maximum sensitivity.

Claims

1. A magnetoelectric magnetic field sensor, comprising:

a) a magnetostrictive layer having a longitudinal bias magnetic field, wherein the magnetostrictive layer has a L/T aspect ratio greater than 1;

b) a piezoelectric layer bonded to the magnetostrictive layer; and

c) a means for creating the longitudinal bias magnetic field in the magnetostrictive layer.

2. The magnetoelectric magnetic field sensor of claim 1, wherein the bias magnetic field is in the range of 100–

1000 Oersteds.

3. The magnetoelectric magnetic field sensor of claim 1, wherein the piezoelectric layer is poled in the perpendicular direction.

4. The magnetoelectric magnetic field sensor of claim 1, wherein the piezoelectric layer is poled in the longitudinal direction.

5. The magnetoelectric magnetic field sensor of claim 1, wherein the magnetostrictive layer has an L/T aspect ratio of at least 2.

6. The magnetoelectric magnetic field sensor of claim 1, wherein the magnetostrictive layer has an L/T aspect ratio in the range of 1.2–

1000.

7. The magnetoelectric magnetic field sensor of claim 1, further comprising a second magnetostrictive layer bonded to the piezoelectric layer.

8. The magnetoelectric magnetic field sensor of claim 1, further comprising a plurality of alternating magnetostrictive layers and piezoelectric layers.

9. The magnetoelectric magnetic field sensor of claim 1, further comprising a voltage detector electrically connected to the piezoelectric layer, and wherein a piezoelectric capacitance and an internal resistance of the voltage detector have an RC cutoff frequency of less than 1 Hz.

10. The magnetoelectric magnetic field sensor of claim 1, wherein the piezoelectric layer is perpendicularly poled, and a ratio of $\frac{\mathrm{total}}{}$

⁢

magnetostrictive⁢

⁢

layer⁢

⁢

thicknesstotal⁢

⁢

device⁢

⁢

thickness

is in a range that provides a sensitivity within 70% of a maximum sensitivity calculated according to Equation (1).

11. The magnetoelectric magnetic field sensor of claim 1, wherein the piezoelectric layer is longitudinally poled, and a ratio of $\frac{\mathrm{total}}{}$

⁢

magnetostrictive⁢

⁢

layer⁢

⁢

thicknesstotal⁢

⁢

device⁢

⁢

thickness

is in a range that provides a sensitivity within 70% of a maximum sensitivity according to Equation (1).

12. The magnetoelectric magnetic field sensor of claim 1, wherein the piezoelectric layer is perpendicularly poled, and a ratio of $\frac{\mathrm{total}}{}$

⁢

magnetostrictive⁢

⁢

layer⁢

⁢

thicknesstotal⁢

⁢

device⁢

⁢

thickness

is in a range that provides a sensitivity within 85% of a maximum sensitivity calculated according to Equation (1).

13. The magnetoelectric magnetic field sensor of claim 1, wherein the piezoelectric layer is longitudinally poled, and a ratio of $\frac{\mathrm{total}}{}$

⁢

magnetostrictive⁢

⁢

layer⁢

⁢

thicknesstotal⁢

⁢

device⁢

⁢

thickness

is in a range that provides a sensitivity within 85% of a maximum sensitivity according to Equation (3).

14. The magnetoelectric magnetic field sensor of claim 1, wherein the piezoelectric layer is longitudinally poled, and a ratio of $\frac{\mathrm{total}}{}$

⁢

magnetostrictive⁢

⁢

layer⁢

⁢

thicknesstotal⁢

⁢

device⁢

⁢

thickness

is in the range 0.5–

0.8.

20. The magnetoelectric magnetic field sensor of claim 1, further comprising a voltage detector operable for detecting a voltage created by the piezoelectric layer.

15. A magnetoelectric magnetic field sensor, comprising:

a) one or more magnetostrictive layers having a longitudinal magnetization;

b) one or more piezoelectric layers bonded to the magnetostrictive layer, and

wherein a thickness ratio of adjacent magnetostrictive and piezoelectric layers is within 50% of a value given by the equation $n_{\mathrm{optim}}=\frac{1}{1+\sqrt{\mathrm{\alpha <br><br>}}}.$

16. The magnetoelectric magnetic field sensor of claim 15, wherein the piezoelectric layer is perpendicularly poled, and $\alpha$

=(1-k31,p2)⁢

s11Es33H.

17. The magnetoelectric magnetic field sensor of claim 15, wherein the piezoelectric layer is longitudinally poled, and $\alpha$

=s33Ds33H.

18. The magnetoelectric magnetic field sensor of claim 15, wherein a thickness ratio of adjacent magnetostrictive and piezoelectric layers is within 25% of a value given by the equation $n_{\mathrm{optim}}=\frac{1}{1+\sqrt{\alpha }}$

.

21. The magnetoelectric magnetic field sensor of claim 15, further comprising a voltage detector operable for detecting a voltage created by the piezoelectric layer.

19. A magnetoelectric magnetic field sensor, comprising:

a) a magnetostrictive layer having a longitudinal bias magnetic field, wherein the magnetostrictive layer has a L/T aspect ratio greater than 1.5;

b) a piezoelectric layer bonded to the magnetostrictive layer; and

c) a permanent magnet for creating the longitudinal bias magnetic field in the magnetostrictive layer.

22. The magnetoelectric magnetic field sensor of claim 19, further comprising a voltage detector operable for detecting a voltage created by the piezoelectric layer.