Method and device for photo-electrochemically etching a semiconductor sample, especially gallium nitride

• US 7,026,255 B2
• Filed: 10/24/2003
• Issued: 04/11/2006
• Est. Priority Date: 12/04/2002
• Status: Active Grant

• Current Assignee: Thomas Wolff
• Original Assignee: Thomas Wolff
• Inventors: Wolff, Thomas
• Primary Examiner(s): Norton, Nadine G.
• Assistant Examiner(s): CHEN, ERIC BRICE
• Application Number:
  US10/693,771
• Publication Number:
  US 20040110386A1
• Time in Patent Office: 900 Days
• Field of Search: None
• US Class Current: 438/746
• CPC Class Codes: C25F 3/12 of semiconducting materials
• CPC Class Codes: H01L 21/30612 Etching of AIIIBV compounds
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

In a method for photo-electrochemical etching of a semiconductor sample, the semiconductor sample is brought in contact with an electrolyte liquid. The contact area formed thereby is illuminated through the electrolyte liquid with UV light. The photo-current created by UV light irradiation at the contact area is measured. To increase the etching quality, a jet of fresh electrolyte liquid is repeatedly applied to the contact area. A device for carrying out the method includes a container to be filled with an electrolyte liquid, a UV source for illuminating the semiconductor sample with UV light through the electrolyte liquid, and a measuring instrument for measuring the photo-current created during UV light irradiation of the contact area. Further provided are an inlet for supplying fresh electrolyte liquid, directed towards the semiconductor sample, and a device attached to the inlet for repeated production of electrolyte fluid jets, directed towards the semiconductor sample.

Claims

1. A method for photo-electrochemically etching a semiconductor sample, comprising the steps of:

bringing a semiconductor sample in contact with an electrolyte liquid, thereby forming a contact area,

irradiating the contact area of the semiconductor sample repeatedly through the electrolyte liquid with UV light irradiation for a predetermined time, whereby a waiting time is generated between each of said UV light irradiations, thereby generating a photo current during each of said UV light irradiations,

measuring the photo current, and

repeatedly subjecting the contact area to a jet of fresh electrolyte liquid, wherein said jet of fresh electrolyte liquid is applied to said contact area in said waiting time between two of said UV light irradiations.

2. The method of claim 1, wherein the semiconductor sample is made of gallium nitride.

3. The method of claim 1, wherein the predetermined time is between 5 and 20 seconds.

4. The method of claim 1, wherein the predetermined time is 10 seconds.

5. The method of claim 1, wherein the waiting time is in the range between 1 and 10 seconds.

6. The method of claim 1, wherein the jet of fresh electrolyte liquid is applied at the start of the waiting time.

7. The method of claim 1, wherein the jet of fresh electrolyte liquid is created by a pump in form of a pressure surge.

8. The method of claim 1, wherein the semiconductor sample is held replaceable in a vertical position.

9. The method of claim 1, wherein the contact area has a diameter of 1 to 4 mm.

10. The method of claim 1, and further comprising the steps of providing a reference electrode at the semiconductor sample, and applying a voltage of −

0.5 V to +0.5 V between the semiconductor sample and the reference electrode.

11. The method of claim 1, wherein the jet of fresh electrolyte liquid is applied for 0.1 to 2.0 seconds to the contact area.

12. The method of claim 1, wherein the electrolyte liquid is an aqueous diluted caustic potash solution (KOH) having a concentration in the range of 0.002M to 0.1M.