Transistor device having a delafossite material
First Claim
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1. A transistor device, comprising:
- a channel of p-type substantially transparent delafossite material;
a source contact interfaced to said channel;
a drain contact interfaced to said channel;
a gate contact; and
a gate dielectric between said gate contact and said channel.
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Accused Products
Abstract
A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel.
55 Citations
36 Claims
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1. A transistor device, comprising:
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a channel of p-type substantially transparent delafossite material; a source contact interfaced to said channel; a drain contact interfaced to said channel; a gate contact; and a gate dielectric between said gate contact and said channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A thin film transistor device, comprising:
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a thin film channel of undoped or lightly doped p-type delafossite material, the delafossite material being substantially transparent; and means for controlling conduction in said thin film channel. - View Dependent Claims (26, 27, 28, 29)
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30. A thin film transistor device, comprising:
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a thin film channel of substantially transparent p-type material; a thin film source contact interfaced to said channel; a thin film drain contact interfaced to said channel; a thin film gate contact; and a thin film gate dielectric between said thin film gate contact and said channel;
wherein materials for said thin film channel, said thin film source contact, and said thin film drain contact are selected so that a work function of materials of the thin film source and drain contacts is nearly equal to or greater than an ionization potential of the p-type material of the thin film channel. - View Dependent Claims (31, 32, 33, 34, 35, 36)
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Specification