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Transistor device having a delafossite material

  • US 7,026,713 B2
  • Filed: 12/17/2003
  • Issued: 04/11/2006
  • Est. Priority Date: 12/17/2003
  • Status: Active Grant
First Claim
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1. A transistor device, comprising:

  • a channel of p-type substantially transparent delafossite material;

    a source contact interfaced to said channel;

    a drain contact interfaced to said channel;

    a gate contact; and

    a gate dielectric between said gate contact and said channel.

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