Silicon substrate as a light modulator sacrificial layer

• US 7,027,202 B1
• Filed: 02/28/2003
• Issued: 04/11/2006
• Est. Priority Date: 02/28/2003
• Status: Active Grant

• Current Assignee: Silicon Light Machines Corporation (SCREEN Holdings Co., Ltd.)
• Original Assignee: Silicon Light Machines Corporation (SCREEN Holdings Co., Ltd.)
• Inventors: Gudeman, Christopher S., Hunter, James
• Primary Examiner(s): Epps, Georgia
• Assistant Examiner(s): CHOI, WILLIAM C
• Application Number:
  US10/377,994
• Time in Patent Office: 1,138 Days
• Field of Search: 359/223, 359/224, 359/230, 359/231, 359290-292, 359/295, 359/298, 359/572, 359/573
• US Class Current: 359/291
• CPC Class Codes: G02B 26/0808 by means of one or more diffracting elements
• CPC Class Codes: G02B 5/1857 using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams

Abstract

An optical MEM device is fabricated with a patterned device layer formed on a silicon wafer. Preferably, the patterned device layer is patterned with plurality of ribbons and/or access trenches. The central portion of the ribbon is released from the silicon wafer using a selective etch process, wherein a cavity is formed under the central portion of the ribbon, while opposing ribbon ends remain attached to the wafer. The selective etching process preferably utilizes an enchant comprising xenon difluoride. In accordance with further embodiments, the silicon wafer is doped, patterned or otherwise modified to enhance the selectivity of the etching process.

Claims

1. A device comprising a substrate structure having a cavity with an edge region and micro-structures suspended over the cavity and coupled to the edge region, wherein a member of the micro-structures has an access hole in a central portion thereof that is used during the formation of the cavity to facilitate etching under said central portion, wherein the micro-structures include elongated ribbons coupled to the edge region through opposing ends of the elongated ribbons.

2. The device of claim 1, wherein the substrate comprises silicon and an oxide under-layer.

3. The device of claim 2, wherein the elongated ribbons are coupled to the edge region through support features coupled to the oxide under-layer.

4. The device of claim 1, wherein the elongated ribbons have lengths in a range of about 50 to about 500 microns and widths in a range of 4.0 to 40 microns.

5. A device comprising a substrate structure having a cavity with an edge region and micro-structures suspended over the cavity and coupled to the edge region, wherein the micro-structures include elongated ribbons coupled to the edge region through opposing ends of the elongated ribbons, wherein the substrate comprises silicon and an oxide under-layer, and wherein a portion of the silicon is doped with a dopant selected from the group consisting of boron and phosphorous.

6. A device comprising a substrate structure having a cavity with an edge region and micro-structures suspended over the cavity and coupled to the edge region, wherein a member of the micro-structures has an access hole in a central portion thereof that is used during the formation of the cavity to facilitate etching under said central portion, and wherein the micro-structures comprise a layer of silicon nitride in a range of about 200 to about 2000 Angstroms thick and a layer of aluminum in a range of about 250 to about 2000 Angstroms thick.

7. An optical (micro electro mechanical) MEM device comprising:

a. means to modulate light comprising a plurality of reflective ribbons suspended over a substrate cavity by opposing ends through securing regions; and

b. means to move a first set of reflective ribbons relative to a second set of the reflective ribbons, said means comprising a driver circuit coupled to at least one of the first set and second set of ribbons,

wherein a reflective ribbon includes an access hole in a center portion thereof that is used during formation of the substrate cavity to facilitate etching under said center portion.

8. The optical MEM device of claim 7, wherein the reflective ribbons comprise a layer of silicon nitride in a range of about 200 to about 2000 Angstroms thick and a layer of aluminum in a range of about 250 to about 2000 Angstroms thick.

9. The optical MEM device of claim 7, wherein the securing regions comprise support structures selected from the group consisting of posts and anchor support structures.

10. The optical MEM device of claim 9, wherein the substrate comprises an oxide under-layer and wherein the support structures couple to the oxide under-layer.

11. A method of making a release structure, comprising:

a. forming a device layer on a silicon wafer; and

b. forming a cavity in the silicon wafer under a portion of the device layer, such that the device layer is suspended over the cavity and attached at opposing ends of the cavity,

wherein a suspendable feature is patterned into the device layer prior to forming the cavity,

wherein the suspendable feature includes an access hole in a central portion thereof that is used during the formation of the cavity to facilitate etching under said central portion, and

wherein forming the device layer comprises depositing a layer of silicon nitride in a range of about 200 to about 2000 Angstroms thick.

12. The method of claim 11, wherein forming the device layer further comprises depositing a layer of aluminum in a range of about 250 to about 2000 Angstroms thick.

13. A method of making a release structure, comprising:

a. forming a device layer on a silicon wafer; and

b. forming a cavity in the silicon wafer under a portion of the device layer, such that the device layer is suspended over the cavity and attached at opposing ends of the cavity,

wherein forming the device layer comprises depositing a layer of silicon nitride in a range of about 200 to about 2000 Angstroms thick,

wherein forming the device layer further comprises depositing a layer of aluminum in a range of about 250 to about 2000 Angstroms thick, and

wherein forming the device layer further comprises depositing a layer of oxide in a range of about 800 to about 1200 Angstroms thick.