Method for cutting a block of material and forming a thin film

• US 7,029,548 B2
• Filed: 07/11/2001
• Issued: 04/18/2006
• Est. Priority Date: 07/12/2000
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Aspar, Bernard, Lagache, Chrystelle
• Primary Examiner(s): Osele, Mark A.
• Application Number:
  US10/312,864
• Publication Number:
  US 20030234075A1
• Time in Patent Office: 1,742 Days
• Field of Search: 156/239, 156/344, 156/529, 156/584, 438/455, 438/458, 831/77
• US Class Current: 156/239
• CPC Class Codes: B81C 1/0038 Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
• CPC Class Codes: B81C 2201/0191 Transfer of a layer from a carrier wafer to a device wafer
• CPC Class Codes: B81C 2201/0192 by cleaving the carrier wafer
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: Y10T 156/1153 Temperature change for delamination [e.g., heating during delaminating, etc.]
• CPC Class Codes: Y10T 156/1158 Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
• CPC Class Codes: Y10T 156/1184 Piercing layer during delaminating [e.g., cutting, etc.]
• CPC Class Codes: Y10T 156/1911 Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
• CPC Class Codes: Y10T 156/1967 Cutting delaminating means

Abstract

A process for cutting out a block of material includes a step of introducing ions in the block thereby forming an embrittled zone and defining at least one superficial part of the block. The method also includes a step of forming at least one separation initiator at the level of the embrittled zone, wherein the step of forming the separation initiator includes implanting ions of an ionic nature different from that introduced during the preceding step. The method further includes a step of separating at the level of the embrittled zone the superficial part of the block from a remaining part of the block from the separation initiator, wherein the separation step includes at least one of a thermal treatment and the application of mechanical forces acting between the superficial part and the embrittled zone.

Claims

1. A process for cutting out a block of material, comprising:

introducing ions in said block thereby forming an embrittled zone and defining at least one superficial part of the block,

performing a thermal treatment to increase an embrittlement of the embrittled zone after said introducing,

forming at least one separation initiator at a level of the embrittled zone after said performing, by implanting ions of an ionic species different from that introduced during said introducing,

placing the at least one superficial part of the block in contact with a stiffener, and

separating, at the level of the embrittled zone, the superficial part of the block from a remaining part of the block, from the separation initiator, wherein said separating comprises at least one of a thermal treatment and an application of mechanical forces acting between the superficial part and the embrittled zone.

2. A process according to claim 1, wherein the separation initiator is formed over all or part of the periphery of the block.

3. A process according to claim 1, wherein the embrittled zone extends closely parallel to a closely plane face of the block, to define in the block a superficial thin film.

4. A process according to claim 1, wherein the forming said at least one separation initiator and the separating are concomitant.

5. A process according to claim 1, wherein said forming said at least one separation initiator comprises a local implantation with an overdose.

6. A process according to claim 1, wherein said separating comprises applying mechanical forces applied from outside the block.

7. A process according to claim 3, further comprising:

depositing at least one layer on the superficial thin film of a material forming said stiffener.

8. A process according to claim 3, wherein the superficial thin film is made integral with said stiffener.

9. A process according to claim 1, further comprising:

re-using the remaining part of the block of material by cutting out a new superficial part after said separating.

10. A process according to claim 1, further comprising:

re-using the remaining part of the block of material as a stiffener for a superficial part of another block after said separating.

11. A process according to claim 1, wherein the separation initiator is formed on local internal zones of the block.

12. A process according to claim 3, further comprising:

gluing together the superficial thin film and the stiffener.

13. A process according to claim 3, further comprising:

coupling together the superficial thin film and the stiffener via molecular contact adhesion.