Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification

• US 7,029,996 B2
• Filed: 11/13/2002
• Issued: 04/18/2006
• Est. Priority Date: 09/03/1999
• Status: Expired due to Fees

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: Sposili, Robert S., Im, James S., Crowder, Mark A.
• Primary Examiner(s): Lebentritt, Michael
• Assistant Examiner(s): ISAAC, STANETTA D
• Application Number:
  US10/294,001
• Publication Number:
  US 20030096489A1
• Time in Patent Office: 1,252 Days
• Field of Search: 438/482, 438486-488, 438/308, 438/378, 438/795, 219/121.61, 219/121.69, 219/121.7, 219/121.72, 359/9, 359/15, 359/559, 359/569, 359/599, 430/17, 430/170, 430/273.1, 430/320, 430/332
• US Class Current: 438/487
• CPC Class Codes: B23K 26/0622 by shaping pulses
• CPC Class Codes: B23K 26/0626 Energy control of the laser beam B23K26/0622 takes precedence
• CPC Class Codes: B23K 26/066 by using masks
• CPC Class Codes: G03F 7/70041 by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
• CPC Class Codes: G03F 7/70725 control
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0268 Shape of mask
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30

Abstract

Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

Claims

1. A method of annealing a silicon film having an interface with an underlying surface, comprising:

growing a silicon grain having a length by completely melting a section of the silicon film to the interface using a first shot of a laser beam having a beam width that is greater than the length of the silicon grain, but less than twice the length of the silicon grain; and

increasing the length of the grown silicon grain by completely remelting part of the grown silicon grain using a second shot of the laser beam, wherein the remelted part is determined by displacing the laser beam relative to the substrate more than one-half of the beam width of the laser beam.

2. The method of annealing a silicon film according to claim 1, wherein the silicon film is scanned by the laser beam.

3. The method of annealing a silicon film according to claim 2, wherein the silicon film is scanned by repeated steps of growing silicon grains, displacing the laser beam relative to the silicon film, remelting part of the grown silicon grains, and then again displacing the laser beam relative to the silicon film.

4. The method of annealing a silicon film according to claim 1, wherein the length of the silicon grain grown by the first shot of the laser beam is about 2 to 4 micrometers.

5. The method of annealing a silicon film according to claim 4, wherein the length of the silicon grain is increased to about 4 to 8 micrometers by the second shot of the laser beam.

6. The method of annealing a silicon film according to claim 1, wherein the silicon film is amorphous silicon before the first shot of the laser beam.

7. The method of annealing a silicon film according to claim 1, wherein the silicon grain is grown and lengthened at atmospheric pressure.

8. The method of annealing a silicon film according to claim 1, wherein the laser beam has a beam width less than 10 micrometers.