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Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification

  • US 7,029,996 B2
  • Filed: 11/13/2002
  • Issued: 04/18/2006
  • Est. Priority Date: 09/03/1999
  • Status: Expired due to Fees
First Claim
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1. A method of annealing a silicon film having an interface with an underlying surface, comprising:

  • growing a silicon grain having a length by completely melting a section of the silicon film to the interface using a first shot of a laser beam having a beam width that is greater than the length of the silicon grain, but less than twice the length of the silicon grain; and

    increasing the length of the grown silicon grain by completely remelting part of the grown silicon grain using a second shot of the laser beam, wherein the remelted part is determined by displacing the laser beam relative to the substrate more than one-half of the beam width of the laser beam.

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