Adhesion improvement for low k dielectrics
First Claim
1. A method for processing a substrate, comprising:
- positioning the substrate in a processing chamber, wherein the substrate has a barrier layer comprising at least silicon and carbon;
introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber;
generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on the barrier layer;
introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber; and
depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
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Abstract
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.
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Citations
20 Claims
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1. A method for processing a substrate, comprising:
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positioning the substrate in a processing chamber, wherein the substrate has a barrier layer comprising at least silicon and carbon; introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber; generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on the barrier layer; introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber; and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for processing a substrate, comprising:
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positioning the substrate in a processing chamber, wherein the substrate has a barrier layer comprising silicon, nitrogen, and carbon; introducing an inert gas into the processing chamber; generating a first plasma from a single-frequency RE power source to modify a surface of the barrier layer; introducing an organosilicon compound and an oxidizing gas in a ratio of about 1;
1 into the processing chamber;generating a second plasma from a dual-frequency RE power source to form an initiation layer on the barrier layer; introducing the organosilicon compound and the oxidizing gas in a ratio of greater than or equal to about 10;
1 into the processing chamber; anddepositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less. - View Dependent Claims (10, 11, 12)
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13. A method for processing a substrate, comprising:
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positioning the substrate in a processing chamber, wherein the substrate has a barrier layer comprising at least silicon and carbon; introducing an oxidizing gas into the processing chamber; generating a plasma of the oxidizing gas and treating a surface of the barrier layer; introducing an organosilicon compound at a first flow rate; depositing an initiation layer on the barrier layer from the oxidizing gas and the organosilicon compound; introducing the organosilicon compound at a second flow rate greater than the first flow rate; depositing a first dielectric layer adjacent the dielectric initiation layer from the oxidizing gas and the organosilicon compound, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A method for processing a substrate, comprising:
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positioning the substrate in a processing chamber, wherein the substrate has a barrier layer comprising at least silicon and carbon; introducing an oxidizing gas into the processing chamber; generating a plasma of the oxidizing gas; and forming an initiation layer on the barrier layer by exposing the barrier layer to the plasma of the oxidizing gas; introducing an organosilicon compound into the processing chamber after forming the initiation layer; reacting the organosilicon compound and the oxidizing gas; and depositing a first dielectric layer adjacent the initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
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Specification