Semiconductor light emitting device and fabrication method thereof
First Claim
1. A semiconductor light emitting device comprising:
- a first GaN based semiconductor layer that has on top thereof a plurality of concave portions formed into a band-like shape with predetermined intervals therebetween;
a second GaN based semiconductor layer formed on the first GaN based semiconductor layer;
a layered structure that is formed on the second GaN based semiconductor layer and that comprises an n-type GaN based semiconductor layer, an active layer, and a p-type GaN based semiconductor layer;
an n-type electrode that is formed on the n-type GaN based semiconductor layer on the portion where the layered structure is partially removed and become exposed; and
a transparent p-type electrode formed on the p-type GaN based semiconductor layer, whereinthe p-type electrode serves as an emission detection surface, andan air layer is formed between the bottom surface of the second GaN based semiconductor layer and the concave portion.
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Accused Products
Abstract
The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
28 Citations
8 Claims
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1. A semiconductor light emitting device comprising:
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a first GaN based semiconductor layer that has on top thereof a plurality of concave portions formed into a band-like shape with predetermined intervals therebetween; a second GaN based semiconductor layer formed on the first GaN based semiconductor layer; a layered structure that is formed on the second GaN based semiconductor layer and that comprises an n-type GaN based semiconductor layer, an active layer, and a p-type GaN based semiconductor layer; an n-type electrode that is formed on the n-type GaN based semiconductor layer on the portion where the layered structure is partially removed and become exposed; and a transparent p-type electrode formed on the p-type GaN based semiconductor layer, wherein the p-type electrode serves as an emission detection surface, and an air layer is formed between the bottom surface of the second GaN based semiconductor layer and the concave portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification