Apparatus and method for fabricating arrays of atomic-scale contacts and gaps between electrodes and applications thereof

• US 7,030,452 B2
• Filed: 03/04/2004
• Issued: 04/18/2006
• Est. Priority Date: 11/30/2001
• Status: Expired due to Fees

• Current Assignee: Arizona Science and Technology Enterprises LLC
• Original Assignee: Arizona Board of Regents (University of Arizona)
• Inventors: Tao, Nongjian, Boussaad, Salah
• Primary Examiner(s): MENZ, LAURA MARY
• Application Number:
  US10/795,151
• Publication Number:
  US 20040169243A1
• Time in Patent Office: 775 Days
• Field of Search: 257/414, 438/689, 438/17, 205/775, 435/6
• US Class Current: 257/414
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 15/00 Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• CPC Class Codes: G01R 33/06 using galvano-magnetic devices
• CPC Class Codes: H10K 10/701 Organic molecular electronic devices
• CPC Class Codes: H10N 99/05 Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors

Abstract

A method for forming atomic-scale contacts and atomic-scale gaps between two electrodes is disclosed. The method provides for applying a voltage between two electrodes in a circuit with a resistor. The applied voltage etches metal ions off one electrode and deposits the metal ions onto the second electrode. The metal ions are deposited on the sharpest point of the second electrode, causing the second electrode to grow towards the first electrode until an atomic-scale contact is formed. By increasing the magnitude of the resistor, the etching and deposition process will terminate prior to contact, forming an atomic-scale gap. The atomic-scale contacts and gaps formed according to this method are useful as a variety of nanosensors including chemical sensors, biosensors, hydrogen ion sensors, heavy metal ion sensors, magnetoresistive sensors, and molecular switches.

Claims

1. A nanosensor, comprising:

a first electrode; and

a second electrode, separated from the first electrode by a first gap, wherein a second gap was decreased to form the first gap by;

electrically coupling a resistor in series with the second electrode to form a circuit including the first electrode, the second electrode and the resistor;

applying a bias voltage across the circuit, the bias voltage having a magnitude sufficient to etch ions from the first electrode and deposit the etched ions onto the second electrode; and

maintaining the application of the bias voltage at least until the etching and deposition of the ions substantially ceases.

2. The nanosensor in claim 1, further comprising a means for determining conductance between the first electrode and the second electrode.

3. The nanosensor in claim 1, wherein the gap is decreased to molecular-scale.

4. The nanosensor in claim 1, wherein the gap is decreased to atomic-scale.

5. The nanosensor in claim 1, wherein the gap is decreased to approximately zero.

6. The nanosensor in claim 1, wherein the gap is decreased until a contact is formed between the first electrode and the second electrode.

7. The nanosensor in claim 1, wherein the nanosensor is used to detect the presence of a chemical, wherein the nanosensor detects the presence of the chemical by the conductance determining means indicating a change in conductance.

8. The nanosensor in claim 1, wherein the nanosensor is used to detect the presence of hydrogen, wherein the nanosensor detects the presence of hydrogen by the conductance determining means indicating a change in conductance.

9. The nanosensor in claim 8, wherein the first electrode and the second electrode comprise palladium.

10. The nanosensor in claim 1, wherein the nanosensor is used to detect the presence of heavy metals ions, wherein the nanosensor detects the presence of the heavy metal ions by the conductance determining means indicating a change in conductance.

11. The nanosensor in claim 1, wherein the nanosensor is used to detect the presence of biological molecules, wherein the nanosensor detects the presence of the biological molecules by the conductance determining means indicating a change in conductance.

12. The nanosensor in claim 1, further comprising:

a metal oxide disposed between the first electrode and the second electrode, wherein the metal oxide substantially bridges the gap between the first electrode and the second electrode;

an organic layer disposed adjacent to the metal oxide; and

a biological receptor disposed adjacent to the organic layer.

13. The nanosensor in claim 1, wherein the first electrode and the second electrode comprise a metal with magnetoresistance.

14. The nanonsensor in claim 13, wherein the nanosensor is used to detect a change in magnetic field.

15. The nanosensor in claim 1, wherein a material with magnetoresistance substantially bridges the gap between the first electrode and the second electrode.

16. The nanosensor in claim 15, wherein the nanosensor is used to detect a change in magnetic field.