Athermal zero-shear interferometer

• US 7,030,993 B2
• Filed: 04/24/2003
• Issued: 04/18/2006
• Est. Priority Date: 04/24/2002
• Status: Expired due to Fees

• Current Assignee: Zygo Corporation (Ametek Incorporated)
• Original Assignee: Zygo Corporation (Ametek Incorporated)
• Inventors: Carlson, Andrew Eric
• Primary Examiner(s): Turner, Samuel A.
• Application Number:
  US10/422,615
• Publication Number:
  US 20040004722A1
• Time in Patent Office: 1,090 Days
• Field of Search: 356/487, 356/493, 356/498, 356/500
• US Class Current: 356/493
• CPC Class Codes: G01B 2290/15 Cat eye, i.e. reflection always parallel to incoming beam
• CPC Class Codes: G01B 2290/70 Using polarization in the interferometer
• CPC Class Codes: G01B 9/02061 Reduction or prevention of effects of tilts or misalignment
• CPC Class Codes: G03F 7/70775 Position control, e.g. interferometers or encoders for determining the stage position

Abstract

An interferometer for receiving a measurement beam from a target location on a stage of a semiconductor lithography machine and a reference beam from a reference location separated from the target location by a separation distance. The interferometer has a reference path to be traversed by the reference beam within the interferometer and a measurement path to be traversed by the measurement beam within the interferometer. Both the measurement path and the reference path are at least as long as the separation distance between the reference location and the target location.

Claims

1. An interferometer comprising:

a first polarizing beam splitter configured to direct an input beam in a direction that depends on a polarization state of the input beam;

a first retroreflector in optical communication with the first polarizing beam splitter;

a second polarizing beam splitter configured to receive an output beam from the first polarizing beam splitter and to direct the received output beam in a direction that depends on a polarization state thereof; and

a second retroreflector in optical communication with the second polarizing beam splitter,

wherein the first polarizing beam-splitter comprises;

a first beam-splitting plane oriented to reflect light having a first polarization toward the second polarizing beam splitter, and

a second beam-splitting plane in optical communication with the first beam-splitting plane, the second beam-splitting plane being oriented to transmit light having a second polarization received from the first beam-splitting plane to the first retroreflector and oriented to reflect light received from the first retroreflector and having the first polarization toward the second polarizing beam splitter.

2. The interferometer of claim 1, further comprising a polarization rotator on an optical path between the first and second polarizing beam splitters for rotating the polarization of the output beam received from the first polarizing beam splitter.

3. The interferometer of claim 2, wherein the polarization rotator comprises a half-wave plate.

4. The interferometer of claim 1, further comprising a steering wedge disposed on an optical path between the first and second polarizing beam splitters.

5. The interferometer of claim 1, further comprising:

a first reflective polarization-rotator in optical communication with the first retroreflector;

a second reflective polarization-rotator in optical communication with the second retroreflector.

6. The interferometer of claim 5, wherein at least one of the first and second reflective polarization-rotators comprises a mirror in optical communication with a quarter-wave plate.

7. A semiconductor lithography system comprising:

an interferometer as recited in claim 1; and

a semiconductor lithography machine having

a base in optical communication with one of the polarizing beam splitters of the interferometer and supporting a corresponding one of the retroreflectors, and

a stage moveable relative to the base, the stage being in optical communication with the other one of the polarizing beam splitters of the interferometer and supporting the other one of the retroreflectors.

8. The semiconductor lithography system of claim 7, wherein the base is a projection optics column and the stage is a reticle stage.

9. An interferometer comprising:

a first polarizing beam splitter in optical communication with a first retroreflector;

a first reflective polarization-rotator on an optical path extending from the first polarizing beam-splitter and including the first retroreflector;

a second polarizing beam-splitter in optical communication with a second retroreflector;

a second reflective polarization-rotator on an optical path extending from the second polarizing beam-splitter and including the second retroreflector; and

a third polarization rotator on an optical path between the first and second polarizing beam-splitters,

wherein the first polarizing beam-splitter comprises;

a first beam-splitting plane oriented to reflect light having a first polarization toward the third polarization rotator, and

a second beam-splitting plane in optical communication with the first beam-splitting plane, the second beam-splitting plane being

oriented to transmit light having a second polarization received from the first beam-splitting plane to the first retroreflector, and

oriented to reflect light received from the first retroreflector and having the first polarization toward the third polarization rotator.

10. The interferometer of claim 9, further comprising a steering wedge on the optical path between the first polarizing beam splitter and the second polarizing beam splitter.

11. The interferometer of claim 9, wherein the third polarization-rotator comprises a half-wave plate.

12. The interferometer of claim 9, wherein at least one of the first and second reflective polarization-rotators comprises a mirror in optical communication with a quarter-wave plate.

13. The interferometer of claim 9, wherein reflective portions of the first and second reflective polarization-rotators are defined by a common mirror.

14. An interferometer comprising:

a first polarizing beam splitter in optical communication with a first retroreflector;

a first reflective polarization-rotator on an optical path extending from the first polarizing beam-splitter and including the first retroreflector;

a second polarizing beam-splitter in optical communication with a second retroreflector;

a second reflective polarization-rotator on an optical path extending from the second polarizing beam-splitter and including the second retroreflector; and

a third polarization rotator on an optical path between the first and second polarizing beam-splitters,

wherein the second polarizing beam-splitter comprises

a mirror plane oriented to redirect light received from the first polarizing beam-splitter; and

a third beam-splitting plane in optical communication

with the mirror plane,

with the second retroreflector, and

with the first polarizing beam-splitter,

the third beam-splitting plane being

oriented to transmit light received from the mirror plane toward the second retroreflector,

oriented to transmit, toward a detector, light received from the second retroreflector and having the first polarization, and

oriented to transmit, toward the detector, light received from the first polarizing beam-splitter and having the second polarization.

15. A semiconductor lithography system comprising:

an interferometer comprising;

a first polarizing beam splitter in optical communication with a first retroreflector,

a first reflective polarization-rotator on an optical path extending from the first polarizing beam-splitter and including the first retroreflector,

a second polarizing beam-splitter in optical communication with a second retroreflector,

a second reflective polarization-rotator on an optical path extending from the second polarizing beam-splitter and including the second retroreflector, and

a third polarization rotator on an optical path between the first and second polarizing beam-splitters; and

a semiconductor lithography machine having

a base on which is mounted the second retroreflector;

a stage on which is mounted the first retroreflector, the stage being moveable relative to the base.

16. The semiconductor lithography system of claim 15, wherein the base is a projection optics column and the stage is a reticle stage.

17. A semiconductor lithography system comprising:

a base defining a reference location;

a stage defining a target location, the stage being moveable relative to the base;

a reference retroreflector mounted on the base at the reference location;

a measurement retroreflector mounted on the stage at the target location; and

an interferometer comprising;

a first polarizing beam splitter configured to direct an input beam in a direction that depends on a polarization state of the input beam, the first polarizing beam splitter in optical communication with one of the retroreflectors, and

a second polarizing beam splitter configured to receive an output beam from the first polarizing beam splitter and to direct the received output beam in a direction that depends on a polarization state thereof, the second polarizing beam splitter in optical communication with the other of the retroreflectors.

18. The semiconductor lithography system of claim 17, wherein the interferometer further comprises a steering wedge disposed on an optical path between the first and second polarizing beam splitters.

19. The semiconductor lithography system of claim 17, wherein the interferometer further comprises a first polarization-rotator on an optical path extending from the first polarizing beam-splitter and including the first one of the retroreflectors, a second polarization-rotator on an optical path extending from the second polarizing beam-splitter and including the second one of the retroreflectors, and a third polarization rotator on an optical path between the first and second polarizing beam-splitters.

20. The semiconductor lithography system of claim 19, wherein the first and second polarization-rotators each include a reflective surface defined by a common mirror.

21. The semiconductor lithography system of claim 17, wherein the base is a projection optics column and the stage is a reticle stage.

22. An interferometer comprising:

a first polarizing beam splitter configured to direct an input beam in a direction that depends on a polarization state of the input beam;

a first retroreflector in optical communication with the first polarizing beam splitter;

a second polarizing beam splitter configured to receive an output beam from the first polarizing beam splitter and to direct the received output beam in a direction that depends on a polarization state thereof;

a second retroreflector in optical communication with the second polarizing beam splitter; and

a common reflective surface in optical communication with each of the retroreflectors and positioned to redirect a beam received from each retroreflector back to that retroreflector and onto its corresponding polarizing beam splitter.

23. The interferometer of claim 22, further comprising a first polarization-rotator on an optical path between the common reflective surface and the first retroreflector, a second polarization-rotator on an optical path between the common reflective surface and the second retroreflector, and a third polarization rotator on an optical path between the first and second polarizing beam-splitters.

24. A semiconductor lithography system comprising:

the interferometer of claim 22;

a base supporting one of the retroreflectors; and

a stage movable relative to the base and supporting the other of the retroreflectors.

25. The semiconductor lithography system of claim 24, wherein the base is a projection optics column and the stage is a reticle stage.