Method of manufacturing semiconductor device

• US 7,033,871 B2
• Filed: 02/22/2005
• Issued: 04/25/2006
• Est. Priority Date: 01/18/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koezuka, Junichi, Murakami, Satoshi, Nakamura, Osamu, Yamazaki, Shunpei, Dairiki, Koji, Kajiwara, Masayuki
• Primary Examiner(s): LEE, HSIEN MING
• Application Number:
  US11/061,780
• Publication Number:
  US 20050142818A1
• Time in Patent Office: 427 Days
• Field of Search: 438/162, 438/166, 438/473, 438/486, 438/508
• US Class Current: 438/162
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/3226 of silicon on insulator
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78624 the source and the drain regions being asymmetrical
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added, are formed in a semiconductor film having a crystalline structure, using a mask, and gettering for segregating a metal element contained in the semiconductor film to the impurity region by heat treatment. Thereafter, pattering is conducted using the mask, whereby a semiconductor layer made of the semiconductor film having a crystalline structure is formed.

Claims

1. A method of manufacturing a semiconductor device, comprising:

forming a semiconductor film having an amorphous structure;

adding a metal element to the semiconductor film having an amorphous structure;

crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;

forming an insulating film over the semiconductor film having a crystalline structure;

forming a resist mask over the insulating film;

patterning the insulating film by using the resist mask for forming a mask;

removing the resist mask;

selectively adding a rare gas element to the semiconductor film having a crystalline structure by using the mask to form an impurity region;

gettering the metal element to the impurity region; and

removing the impurity region,

wherein the step of selectively adding the rare gas element is conducted in an atmosphere containing the rare gas element and water vapor.

2. A method according to claim 1, wherein one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added in addition to the rare gas element and water vapor.

3. A method of manufacturing a semiconductor device, comprising:

forming a semiconductor film having an amorphous structure;

adding a metal element to the semiconductor film having an amorphous structure;

crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;

forming an insulating film over the semiconductor film having a crystalline structure;

forming a resist mask over the insulating film;

selectively adding a rare gas element to the semiconductor film having a crystalline structure by using the resist mask to form an impurity region;

removing the resist mask;

gettering the metal element to the impurity region;

removing the insulating film; and

removing the impurity region.

4. A method according to claim 3, wherein one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added in addition to the rare gas element.

5. A method according to claim 3, wherein the step of selectively adding a rare gas element is conducted in an atmosphere containing a rare gas element and water vapor.

6. A method of manufacturing a semiconductor device, comprising:

forming a semiconductor film having an amorphous structure;

adding a metal element to the semiconductor film having an amorphous structure;

crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;

forming an insulating film over the semiconductor film having a crystalline structure;

forming a resist mask over the insulating film;

patterning the insulating film by using the resist mask for forming a mask;

selectively adding a rare gas element to the semiconductor film having a crystalline structure by using the resist mask and the mask to form an impurity region;

removing the resist mask;

gettering the metal element to the impurity region; and

removing the impurity region.

7. A method according to claim 6, wherein one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added in addition to the rare gas element.

8. A method according to claim 6, wherein the step of selectively adding a rare gas element is conducted in an atmosphere containing a rare gas element and water vapor.