Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
First Claim
1. A process of fabricating a trench MIS device comprising;
- providing a substrate of a first conductivity type;
forming an epitaxial layer on the substrate, the epitaxial layer being being generally of a second conductivity type, the epitaxial layer having a doping concentration less than a doping concentration of the substrate;
forming a trench in the epitaxial layer, the trench having a bottom in the epitaxial layer;
forming sidewall spacers in the trench;
implanting a dopant of the first conductivity type between the sidewall spacers and through the bottom of the trench, the dopant forming a drain-drift region extending between the bottom of the trench and the substrate;
forming a bottom insulating layer on the bottom of the trench between the sidewall spacers;
removing the sidewall spacers;
forming a gate insulating layer on the sidewalls of the trench, the gate insulating layer being thinner than the bottom insulating layer; and
introducing a conductive material into the trench.
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Accused Products
Abstract
A trench MIS device is formed in a P-epitaxial layer that overlies an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the trench to the substrate. The thick insulating layer reduces the capacitance between the gate and the drain and therefore improves the ability of the device to operate at high frequencies. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The thick bottom oxide layer is formed on the bottom of the trench while the sidewall spacers are still in place. Therefore, in embodiments where the thermal budget of the process is limited following the implant of the drain-drift region, the PN junctions between the drain-drift region and the epitaxial layer are self-aligned with the edges of the thick bottom oxide. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The relatively flat dopant profile in the channel region provides an increased punchthrough voltage and low threshold voltage.
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Citations
15 Claims
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1. A process of fabricating a trench MIS device comprising;
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providing a substrate of a first conductivity type; forming an epitaxial layer on the substrate, the epitaxial layer being being generally of a second conductivity type, the epitaxial layer having a doping concentration less than a doping concentration of the substrate; forming a trench in the epitaxial layer, the trench having a bottom in the epitaxial layer; forming sidewall spacers in the trench; implanting a dopant of the first conductivity type between the sidewall spacers and through the bottom of the trench, the dopant forming a drain-drift region extending between the bottom of the trench and the substrate; forming a bottom insulating layer on the bottom of the trench between the sidewall spacers; removing the sidewall spacers; forming a gate insulating layer on the sidewalls of the trench, the gate insulating layer being thinner than the bottom insulating layer; and introducing a conductive material into the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification