Etching of high aspect ration structures

• US 7,033,954 B2
• Filed: 09/02/2004
• Issued: 04/25/2006
• Est. Priority Date: 06/28/2001
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Donohoe, Kevin G.
• Primary Examiner(s): Baumeister, B. William
• Assistant Examiner(s): Anya, Igwe U.
• Application Number:
  US10/932,524
• Publication Number:
  US 20050032388A1
• Time in Patent Office: 600 Days
• Field of Search: 438/723, 438/724, 438/719, 438/710, 438/691, 438/692, 438/711, 438/734, 438/637, 216/67, 216/79
• US Class Current: 438/723
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/76804 by forming tapered via holes

Abstract

Plasma etching processes using a plasma containing fluorine as well as bromine and/or iodine are suited for high aspect ratio etching of trenches, contact holes or other apertures in silicon oxide materials. The plasma is produced using at least one fluorine-containing source gas and at least one bromine- or iodine-containing source gas. Bromine/iodine components of the plasma protect the aperture sidewalls from lateral attack by free fluorine, thus advantageously reducing a tendency for bowing of the sidewalls. Ion bombardment suppresses absorption of bromine/iodine components on the etch front, thus facilitating advancement of the etch front without significantly impacting taper.

Claims

1. A method of forming an aperture in a silicon oxide layer, the method comprising:

generating a plasma containing fluorine, wherein the plasma is substantially devoid of bromine or iodine;

accelerating ions from the plasma toward a surface of the silicon oxide layer;

etching an exposed portion of the silicon oxide layer, thereby advancing an etch front into the silicon oxide layer and forming the aperture having sidewalls;

after advancing the etch front into the silicon oxide layer, adding at least one element selected from the group consisting of bromine and iodine to the plasma; and

continuing to advance the etch front after adding the at least one element.

2. The method of claim 1, wherein accelerating ions from the plasma toward a surface of the silicon oxide layer further comprises accelerating ions from the plasma toward a surface of the silicon oxide layer using a bias power of at least approximately 900 watts.

3. The method of claim 1, wherein generating a plasma containing fluorine further comprises generating a plasma having at least one fluorine-containing source gas.

4. The method of claim 3, wherein each fluorine-containing source gas is selected from the group consisting of perfluorocarbons and hydrofluorocarbons.

5. The method of claim 4, wherein each fluorine-containing source gas is selected from the group consisting of trifluoromethane, difluoromethane, pentafluoroethane, perfluoropropene, perfluoropropane and perfluorobutene.

6. The method of claim 1, wherein adding at least one element selected from the group consisting of bromine and iodine to the plasma further comprises adding a source gas selected from the group consisting of hydrogen bromide, bromotrifluoromethane, a bromine-substituted fluorocarbon, a bromine-substituted hydrofluorocarbon, hydrogen iodide, iodotrifluoromethane, an iodine-substituted fluorocarbon and an iodine-substituted hydrofluorocarbon.

7. The method of claim 1, wherein the silicon oxide layer contains a silicon oxide material selected from the group consisting of doped and undoped silicon oxide materials.

8. The method of claim 7, wherein the silicon oxide layer contains a silicon oxide material selected from the group consisting of silicon dioxide, tetraethylorthosilicate, a silicon oxynitride, borosilicate glass, phosphosilicate glass and borophosphosilicate glass.

9. A method of forming an aperture in a silicon oxide layer, the method comprising:

generating a plasma containing at least one fluorine-containing source gas selected from the group consisting of perfluorocarbons and hydrofluorocarbons, wherein the plasma is substantially devoid of bromine or iodine;

accelerating ions from the plasma toward a surface of the silicon oxide layer;

etching an exposed portion of the silicon oxide layer, thereby advancing an etch front into the silicon oxide layer and forming the aperture having sidewalls;

after advancing the etch front into the silicon oxide layer, adding at least one additional source gas selected from the group consisting of hydrogen bromide, bromotrifluoromethane, a bromine-substituted fluorocarbon, a bromine-substituted hydrofluorocarbon, hydrogen iodide, iodotrifluoromethane, an iodine-substituted fluorocarbon and an iodine-substituted hydrofluorocarbon to the plasma; and

continuing to advance the etch front after adding the at least one additional source gas.

10. The method of claim 9, wherein each fluorine-containing source gas is selected from the group consisting of trifluoromethane, difluoromethane, pentafluoroethane, perfluoropropene, perfluoropropane and perfluorobutene.

11. The method of claim 9, wherein the silicon oxide layer contains a silicon oxide material selected from the group consisting of doped and undoped silicon oxide materials.

12. A method of forming an aperture in a silicon oxide layer, the method comprising:

generating a first plasma comprising a fluorine-containing source gas and an inert gas;

accelerating ions from the first plasma toward a surface of the silicon oxide layer;

etching an exposed portion of the silicon oxide layer, thereby exposing sidewalls of the silicon oxide layer;

after exposing sidewalls of the silicon oxide layer, generating a second plasma comprising a fluorine-containing source gas, an inert gas and a source gas comprising at least one element selected from the group consisting of bromine and iodine, wherein the source gas comprising at least one element selected from the group consisting of bromine and iodine is not a component of the first plasma;

accelerating ions from the second plasma toward a surface of the silicon oxide layer; and

continuing to etch the exposed portion of the silicon oxide layer until an aperture having a desired aspect ratio is attained.

13. The method of claim 12, wherein each fluorine-containing source gas is selected from the group consisting of perfluorocarbons and hydrofluorocarbons.

14. The method of claim 12, wherein the source gas comprising at least one element selected from the group consisting of bromine and iodine is selected from the group consisting of hydrogen bromide, bromotrifluoromethane, a bromine-substituted fluorocarbon, a bromine-substituted hydrofluorocarbon, hydrogen iodide, iodotrifluoromethane, an iodine-substituted fluorocarbon and an iodine-substituted hydrofluorocarbon.

15. The method of claim 12, wherein the silicon oxide layer contains a silicon oxide material selected from the group consisting of doped and undoped silicon oxide materials.

16. A method of forming an aperture in a silicon oxide layer, the method comprising:

generating a first plasma comprising an inert gas and a fluorine-containing source gas selected from the group consisting of perfluorocarbons and hydrofluorocarbons;

accelerating ions from the first plasma toward a surface of the silicon oxide layer;

etching an exposed portion of the silicon oxide layer, thereby exposing sidewalls of the silicon oxide layer;

after exposing sidewalls of the silicon oxide layer, generating a second plasma comprising an inert gas, a fluorine-containing source gas, and at least one additional source gas that is not a component of the first plasma, wherein each additional source gas is selected from the group consisting of hydrogen bromide, bromotrifluoromethane, a bromine-substituted fluorocarbon, a bromine-substituted hydrofluorocarbon, hydrogen iodide, iodotrifluoromethane, an iodine-substituted fluorocarbon and an iodine-substituted hydrofluorocarbon;

accelerating ions from the second plasma toward a surface of the silicon oxide layer; and

continuing to etch the exposed portion of the silicon oxide layer until an aperture having a desired aspect ratio is attained.

17. The method of claim 16, wherein the silicon oxide layer contains a silicon oxide material selected from the group consisting of doped and undoped silicon oxide materials.

18. A method of forming an aperture in a silicon oxide layer, the method comprising:

generating a first plasma consisting essentially of a fluorine-containing source gas and an inert gas;

accelerating ions from the first plasma toward a surface of the silicon oxide layer;

etching an exposed portion of the silicon oxide layer, thereby exposing sidewalls of the silicon oxide layer;

after exposing sidewalls of the silicon oxide layer, generating a second plasma consisting essentially of a fluorine-containing source gas, a bromine-containing source gas and an inert gas;

accelerating ions from the second plasma toward a surface of the silicon oxide layer; and

continuing to etch the exposed portion of the silicon oxide layer until an aperture having a desired aspect ratio is attained.

19. A method of forming an aperture in a silicon oxide layer, the method comprising:

generating a first plasma consisting essentially of a fluorine-containing source gas and an inert gas;

accelerating ions from the first plasma toward a surface of the silicon oxide layer;

etching an exposed portion of the silicon oxide layer, thereby exposing sidewalls of the silicon oxide layer;

after exposing sidewalls of the silicon oxide layer, generating a second plasma consisting essentially of a fluorine-containing source gas, a iodine-containing source gas and an inert gas;

accelerating ions from the second plasma toward a surface of the silicon oxide layer; and

continuing to etch the exposed portion of the silicon oxide layer until an aperture having a desired aspect ratio is attained.