Epitaxy/substrate release layer

• US 7,033,961 B1
• Filed: 07/15/2003
• Issued: 04/25/2006
• Est. Priority Date: 07/15/2003
• Status: Expired due to Term

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: RF Micro Devices Incorporated (Qorvo, Inc.)
• Inventors: Shealy, Jeffrey B., Gibb, Shawn, Grider, David, Hosse, Brook, Smart, Joseph
• Primary Examiner(s): Nadav, Ori
• Application Number:
  US10/620,205
• Time in Patent Office: 1,015 Days
• Field of Search: 438/22, 438/46, 438/47, 438/308, 438795-799, 117/3
• US Class Current: 438/796
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/66462 with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Abstract

The present invention relates to an epitaxial structure having one or more structural epitaxial layers, including a gallium nitride (GaN) layer, which is deposited on a substrate, and a method of growing the epitaxial structure, wherein the structural epitaxial layers can be separated from the substrate. In general, a sacrificial epitaxial layer is deposited on the substrate between the substrate and the structural epitaxial layers, and the structural epitaxial layers are deposited on the sacrificial layer. After growth, the structural epitaxial layers are separated from the substrate by oxidizing the sacrificial layer. The structural epitaxial layers include a nucleation layer deposited on the sacrificial layer and a gallium nitride layer deposited on the nucleation layer. Optionally, the oxidation of the sacrificial layer may also oxidize the nucleation layer.

Claims

1. A method of growing a gallium nitride (GaN) epitaxial structure and fabricating an electronic device comprising:

a) depositing a sacrificial epitaxial layer on a substrate, wherein the sacrificial epitaxial layer is essentially aluminum gallium nitride;

b) depositing one or more structural epitaxial layers including a GaN buffer layer on the sacrificial epitaxial layer; and

c) oxidizing the sacrificial epitaxial layer to separate the substrate from the one or more structural epitaxial layers, wherein oxidizing the sacrificial epitaxial layer alters the chemical composition of the sacrificial epitaxial layer such that an ability of the sacrificial layer to adhere the substrate to the one or more epitaxial layers is substantially reduced.

2. The method of claim 1 further comprising fabricating an electronic device using the epitaxial layers.

3. The method of claim 1 wherein the one or more structural epitaxial layers further comprises a nucleation layer, further wherein the depositing the one or more structural epitaxial layers step comprises depositing the nucleation layer on the sacrificial epitaxial layer.

4. The method of claim 3 wherein the oxidizing step further oxidizes the nucleation layer.

5. The method of claim 3 wherein the depositing the one or more structural epitaxial layers step further comprises depositing the GaN buffer layer on the nucleation layer.

6. The method of claim 5 wherein the one or more structural epitaxial layers further comprise a barrier layer and a cap layer, further wherein the depositing the one or more structural epitaxial layers step further comprises:

a) depositing the barrier layer on the GaN buffer layer; and

b) depositing the cap layer on the barrier layer.

7. The method of claim 6 further comprising:

a) forming an ohmic source contact on the cap layer;

b) forming an ohmic drain contact on the cap layer; and

c) forming a gate contact on the cap layer between the source contact and the drain contact,

wherein the source, gate, and drain contacts are separate contacts.

8. The method of claim 6 wherein the one or more structural epitaxial layers further comprises an insulation layer, further wherein the depositing the one or more structural epitaxial layers step further comprises depositing the insulation layer on the cap layer.

9. The method of claim 8 further comprising:

a) forming a source contact on the cap layer;

b) forming a drain contact on the cap layer; and

c) forming a gate contact on the insulation layer between the source contact and the drain contact,

wherein the source, gate, and drain contacts are separate contacts.

10. The method of claim 1 wherein the oxidizing step oxidizes the sacrificial epitaxial layer with steam.

11. The method of claim 1 wherein the oxidizing step oxidizes the sacrificial epitaxial layer with hydrogen peroxide.

12. A method of fabricating an electronic device comprising:

a) depositing a sacrificial epitaxial layer on a substrate, wherein the sacrificial epitaxial layer is essentially aluminum gallium nitride;

b) depositing one or more structural epitaxial layers including a gallium nitride (GaN) buffer layer on the sacrificial epitaxial layer;

c) fabricating an electronic device on the structural epitaxial layers; and

d) oxidizing the sacrificial epitaxial layer to separate the substrate from the electronic device, wherein oxidizing the sacrificial epitaxial layer alters the chemical composition of the sacrificial epitaxial layer such that an ability of the sacrificial layer to adhere the substrate to the one or more epitaxial layers is substantially reduced.

13. The method of claim 12 wherein the one or more structural epitaxial layers further comprises a nucleation layer, further wherein the depositing the one or more structural epitaxial layers step comprises depositing the nucleation layer on the sacrificial epitaxial layer.

14. The method of claim 13 wherein the oxidizing step further oxidizes the nucleation layer.

15. The method of claim 13 wherein the depositing the one or more structural epitaxial layers step further comprises depositing the GaN buffer layer on the nucleation layer.

16. The method of claim 15 wherein the one or more structural epitaxial layers further comprises a barrier layer and a cap layer, further wherein the depositing the one or more structural epitaxial layers step further comprises:

i) depositing the barrier layer on the GaN buffer layer; and

ii) depositing the cap layer on the barrier layer.

17. The method of claim 16 wherein the fabricating step comprises:

i) forming an ohmic source contact on the cap layer;

ii) forming an ohmic drain contact on the cap layer; and

iii) forming a gate contact on the cap layer between the source contact and the drain contact,

wherein the source, gate, and drain contacts are separate contacts.

18. The method of claim 16 wherein the one or more structural epitaxial layers further comprises an insulation layer, further wherein the depositing the one or more structural epitaxial layers step further comprises depositing the insulation layer on the cap layer.

19. The method of claim 18 wherein the fabricating step comprises:

i) forming an ohmic source contact on the cap layer;

ii) forming an ohmic drain contact on the cap layer; and

iii) forming a gate contact on the insulation layer between the source contact and the drain contact,

wherein the source, gate, and drain contacts are separate contacts.

20. The method of claim 12 wherein the oxidizing step oxidizes the sacrificial epitaxial layer with steam.

21. The method of claim 12 wherein the oxidizing step oxidizes the sacrificial epitaxial layer with hydrogen peroxide.

22. A method of growing a gallium nitride (GaN) epitaxial structure and fabricating an electronic device comprising:

a) depositing a sacrificial epitaxial layer on a substrate, wherein the sacrificial epitaxial layer has a high aluminum mole fraction;

b) depositing one or more structural epitaxial layers including a GaN buffer layer on the sacrificial epitaxial layer; and

c) oxidizing the sacrificial epitaxial layer to separate the substrate from the one or more structural epitaxial layers, wherein oxidizing the sacrificial epitaxial layer alters the chemical composition of the sacrificial epitaxial layer such that an ability of the sacrificial layer to adhere the substrate to the one or more epitaxial layers is substantially reduced.

23. The method of claim 22 wherein the aluminum mole fraction is greater than or equal to 0.3.

24. A method of fabricating an electronic device comprising:

a) depositing a sacrificial epitaxial layer on a substrate, wherein the sacrificial epitaxial layer has a high aluminum mole fraction;

b) depositing one or more structural epitaxial layers including a gallium nitride (GaN) buffer layer on the sacrificial epitaxial layer;

c) fabricating an electronic device on the structural epitaxial layers; and

d) oxidizing the sacrificial epitaxial layer to separate the substrate from the electronic device, wherein oxidizing the sacrificial epitaxial layer alters the chemical composition of the sacrificial epitaxial layer such that an ability of the sacrificial layer to adhere the substrate to the one or more epitaxial layers is substantially reduced.

25. The method of claim 24 wherein the aluminum mole fraction is greater than or equal to 0.3.