Beam source and beam processing apparatus
First Claim
1. A beam source comprising:
- a plasma generating chamber;
a gas inlet port for introducing a gas into said plasma generating chamber;
a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 1010 ions/cm3 and negative ions from the gas;
a plasma potential adjustment electrode disposed in said plasma generating chamber;
a grid electrode having a plurality of beam extraction holes formed therein, said beam extraction holes having a size of at least 0.5 mm;
a first power supply for applying a voltage of at most 500 V between said plasma potential adjustment electrode and said grid electrode;
a coil disposed near said plasma generating chamber; and
a second power supply for intermittently supplying a high-frequency voltage to said coil.
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0 Petitions
Accused Products
Abstract
A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 1010 ions/cm3 and negative ions from the gas. The beam source also includes a plasma potential adjustment electrode disposed in the plasma generating chamber and a grid electrode having a plurality of beam extraction holes formed therein. The beam extraction holes have a diameter of at least 0.5 mm. The beam source has a first power supply for applying a voltage of at most 500 V between the plasma potential adjustment electrode and the grid electrode.
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Citations
24 Claims
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1. A beam source comprising:
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a plasma generating chamber; a gas inlet port for introducing a gas into said plasma generating chamber; a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 1010 ions/cm3 and negative ions from the gas; a plasma potential adjustment electrode disposed in said plasma generating chamber; a grid electrode having a plurality of beam extraction holes formed therein, said beam extraction holes having a size of at least 0.5 mm; a first power supply for applying a voltage of at most 500 V between said plasma potential adjustment electrode and said grid electrode; a coil disposed near said plasma generating chamber; and a second power supply for intermittently supplying a high-frequency voltage to said coil. - View Dependent Claims (2)
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3. A beam source comprising:
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a plasma generating chamber; a gas inlet port for introducing a gas into said plasma generating chamber; a plasma generator for generating positive-negative ion plasma containing positive ions and negative ions from the gas; a plurality of grid electrodes each having a plurality of beam extraction holes formed therein; a first power supply for applying a voltage between said plurality of grid electrodes to accelerate the positive ions or the negative ions so as to pass through said beam extraction holes formed in said grid electrodes and to extract a neutralized beam from the positive ions or the negative ions or an ion beam; a coil disposed near said plasma generating chamber; and a second power supply for intermittently supplying a high-frequency voltage to said coil. - View Dependent Claims (4, 5, 6, 7, 8)
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9. A beam processing apparatus comprising:
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a vacuum chamber; a holder disposed in said vacuum chamber for holding a workpiece; and a beam source for applying a beam to the workpiece held by said holder, said beam source comprising; a plasma generating chamber; a gas inlet port for introducing a gas into said plasma generating chamber; a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 1010 ions/cm3 and negative ions from the gas; a plasma potential adjustment electrode disposed in said plasma generating chamber; a grid electrode having a plurality of beam extraction holes formed therein, said beam extraction holes having a size of at least 0.5 mm; a first power supply for applying a voltage of at most 500 V between said plasma potential adjustment electrode and said grid electrode; a coil disposed near said plasma generating chamber; and a second power supply for intermittently supplying a high-frequency voltage to said coil. - View Dependent Claims (10)
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11. A beam processing apparatus comprising:
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a vacuum chamber; a holder disposed in said vacuum chamber for holding a workpiece; and a beam source for applying a beam to the workpiece held by said holder, said beam source comprising; a plasma generating chamber; a gas inlet port for introducing a gas into said plasma generating chamber; a plasma generator for generating positive-negative ion plasma containing positive ions and negative ions from the gas; a plurality of grid electrodes each having a plurality of beam extraction holes formed therein; a first power supply for applying a voltage between said plurality of grid electrodes to accelerate the positive ions or the negative ions so as to pass through said beam extraction holes formed in said grid electrodes and to extract a neutralized beam from the positive ions or the negative ions or an ion beam; a coil disposed near said plasma generating chamber; and a second power supply for intermittently supplying a high-frequency voltage to said coil. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A beam source comprising:
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a plasma generating chamber; a gas inlet port for introducing a gas into said plasma generating chamber; a plasma generator for generating positive-negative ion plasma containing positive ions and negative ions from the gas; a plurality of grid electrodes each having a plurality of beam extraction holes formed therein; a first power supply for applying a voltage between said plurality of grid electrodes to accelerate the positive ions or the negative ions so as to pass through said beam extraction holes formed in said grid electrodes and to extract a neutralized beam from the positive ions or the negative ions or an ion beam; a plasma potential adjustment electrode disposed in said plasma generating chamber; and a plasma potential adjustment power supply for applying a voltage between said plasma potential adjustment electrode and at least one of said grid electrodes. - View Dependent Claims (18, 19, 20)
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21. A beam processing apparatus comprising:
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a vacuum chamber; a holder disposed in said vacuum chamber for holding a workpiece; and a beam source for applying a beam to the workpiece held by said holder, said beam source comprising; a plasma generating chamber; a gas inlet port for introducing a gas into said plasma generating chamber; a plasma generator for generating positive-negative ion plasma containing positive ions and negative ions from the gas; a plurality of grid electrodes each having a plurality of beam extraction holes formed therein; a first power supply for applying a voltage between said plurality of grid electrodes to accelerate the positive ions or the negative ions so as to pass through said beam extraction holes formed in said grid electrodes and to extract a neutralized beam from the positive ions or the negative ions or an ion beam; a plasma potential adjustment electrode disposed in said plasma generating chamber; and a plasma potential adjustment power supply for applying a voltage between said plasma potential adjustment electrode and at least one of said grid electrodes. - View Dependent Claims (22, 23, 24)
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Specification