CT detector fabrication process

• US 7,034,313 B2
• Filed: 06/09/2005
• Issued: 04/25/2006
• Est. Priority Date: 05/11/2004
• Status: Active Grant

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Hoffman, David M.
• Primary Examiner(s): Porta, David
• Assistant Examiner(s): TANINGCO, MARCUS H
• Application Number:
  US11/160,112
• Publication Number:
  US 20050253079A1
• Time in Patent Office: 320 Days
• Field of Search: 250/370.13
• US Class Current: 250/370.13
• CPC Class Codes: G01T 1/242 Stacked detectors, e.g. for depth information constructional or manufacturing details H01L25/00
• CPC Class Codes: G01T 1/249 specially adapted for use in SPECT or PET SPECT imaging G01T1/1642; PET imaging G01T1/2985; detecting prohibited goods, e.g. weapons, explosives, hazardous substances, contraband or smuggled objects G01V5/20

Abstract

A CT detector capable of energy discrimination and direct conversion is disclosed. The detector includes multiple layers of semiconductor material with the layers having varying thicknesses. The detector is constructed to be segmented in the x-ray penetration direction so as to optimize count rate performance as well as avoid saturation.

Claims

1. A direct conversion CT detector comprising:

a plurality of semiconductor layers formed of semiconducting material arranged in a stack; and

a plurality of electrically conductive film layers interspersed within the stack such that each semiconductor layer is in contact with at least two electrically conductive film layers.

2. The detector of claim 1 wherein the plurality of semiconductor layers has a thickness in an x-ray reception direction that is uniform.

3. The detector of claim 2 wherein the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and wherein the first semiconductor layer has a material thickness equal to that of the second semiconductor layer.

4. The detector of claim 1 wherein each of the plurality of semiconductor layers has an x-ray reception surface and an electrically conductive film layer affixed to the x-ray reception surface.

5. The detector of claim 1 wherein the semiconductor material includes CZT.

6. The detector of claim 1 wherein the stack includes at least three semiconductor layers and wherein the semiconductor layer most distal from a source of x-rays has an electrically conductive film layer affixed to an x-ray reception surface thereof and an electrically conductive film layer affixed to a surface opposite the x-ray reception surface.

7. The detector of claim 1 wherein the plurality of electrically conductive film layer includes HV connection film layers and signal collective film layers, and wherein each of the plurality of semiconductor layers is connected to an HV connection film layer and a signal collection film layer.

8. A CT system comprising:

a gantry having an x-ray positioned therein and configured to project x-rays toward a subject; and

a DAS including a detector array comprising a plurality of detectors, wherein each detector includes;

a stack of semiconductors designed to be impinged with x-rays and output an electrical signal indicative of the x-rays impinged thereon; and

a plurality of electrode layers interspersed within the stack such that each semiconductor is connected to a pair of electrode layers.

9. The CT system of claim 8 wherein the plurality of electrode layers includes a number of HV connection film layers and a number of signal collection film layers.

10. The CT system of claim 9 wherein each semiconductor is connected to one HV connection film layer and one signal collection film layer.

11. The CT system of claim 10 wherein each detector includes a charging lead connected to the number of HV connection film layers.

12. The CT system of claim 10 wherein each detector includes a readout lead connected to the number of signal collection film layers.

13. The CT system of claim 8 wherein the semiconductors are formed of CZT.

14. A detector comprising:

a first semiconductor having an electrode layer affixed to an x-ray reception surface thereof;

a second semiconductor having an electrode layer affixed to an x-ray reception surface thereof; and

wherein the first semiconductor and the second semiconductor are arranged in a stack such that the electrode layer of the second semiconductor is connected to a surface of the first semiconductor that is opposite the x-ray reception surface.

15. The detector of claim 14 wherein the second semiconductor has a pair of electrode layers, one of which is affixed to the x-ray reception surface thereof and the other of the pair is affixed to a surface thereof that is opposite the x-ray reception surface thereof.

16. The detector of claim 14 wherein each semiconductor is connected to two electrode layers.

17. The detector of claim 16 wherein each semiconductor is connected to an HV electrode layer and a signal collection electrode layer.

18. The detector of claim 14 wherein the first semiconductor has a thickness that is different than that of the second semiconductor.

19. The detector of claim 14 wherein the first semiconductor and the second semiconductor convert x-rays directly to electrical current.

20. The detector of claim 14 incorporated in a CT scanner.