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CT detector fabrication process

  • US 7,034,313 B2
  • Filed: 06/09/2005
  • Issued: 04/25/2006
  • Est. Priority Date: 05/11/2004
  • Status: Active Grant
First Claim
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1. A direct conversion CT detector comprising:

  • a plurality of semiconductor layers formed of semiconducting material arranged in a stack; and

    a plurality of electrically conductive film layers interspersed within the stack such that each semiconductor layer is in contact with at least two electrically conductive film layers.

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