CT detector fabrication process
First Claim
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1. A direct conversion CT detector comprising:
- a plurality of semiconductor layers formed of semiconducting material arranged in a stack; and
a plurality of electrically conductive film layers interspersed within the stack such that each semiconductor layer is in contact with at least two electrically conductive film layers.
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Abstract
A CT detector capable of energy discrimination and direct conversion is disclosed. The detector includes multiple layers of semiconductor material with the layers having varying thicknesses. The detector is constructed to be segmented in the x-ray penetration direction so as to optimize count rate performance as well as avoid saturation.
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Citations
20 Claims
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1. A direct conversion CT detector comprising:
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a plurality of semiconductor layers formed of semiconducting material arranged in a stack; and a plurality of electrically conductive film layers interspersed within the stack such that each semiconductor layer is in contact with at least two electrically conductive film layers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A CT system comprising:
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a gantry having an x-ray positioned therein and configured to project x-rays toward a subject; and a DAS including a detector array comprising a plurality of detectors, wherein each detector includes; a stack of semiconductors designed to be impinged with x-rays and output an electrical signal indicative of the x-rays impinged thereon; and a plurality of electrode layers interspersed within the stack such that each semiconductor is connected to a pair of electrode layers. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A detector comprising:
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a first semiconductor having an electrode layer affixed to an x-ray reception surface thereof; a second semiconductor having an electrode layer affixed to an x-ray reception surface thereof; and wherein the first semiconductor and the second semiconductor are arranged in a stack such that the electrode layer of the second semiconductor is connected to a surface of the first semiconductor that is opposite the x-ray reception surface. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification