Magnetic field sensing device

• US 7,034,651 B2
• Filed: 01/29/2003
• Issued: 04/25/2006
• Est. Priority Date: 05/27/1998
• Status: Expired due to Term

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Bohlinger, Michael J.
• Primary Examiner(s): Lee, Kyung
• Application Number:
  US10/353,620
• Publication Number:
  US 20030141957A1
• Time in Patent Office: 1,182 Days
• Field of Search: 338/32.R, 324/247
• US Class Current: 338/100
• CPC Class Codes: G01R 33/09 Magnetoresistive devices
• CPC Class Codes: G01R 33/096 anisotropic magnetoresistance sensors

Abstract

Two sensor units are formed from magnetoresistive material. Elements of the first sensor unit have a total anisotropy field in a first direction. Elements of the second sensor unit have a total anisotropy field in a second direction. An integral coil sets a direction of magnetization in the elements of the first and second sensor units. An output of the first sensor unit is representative of magnetic field components perpendicular to the first direction and an output of the second sensor is representative of magnetic field components perpendicular to the second direction.

Claims

1. An integrated device for measuring magnetic fields comprising:

a first sensor unit comprising a first full bridge circuit and a second sensor unit comprising a second full bridge circuit;

said first sensor unit and said second sensor unit comprising magneto resistive material formed directly on a single substrate and having the same crystal anisotropy field;

said first sensor unit comprising at least one sensing element having an elongated shape and having a total anisotropy field in a first direction;

said first sensor unit having an output related to magnetic field components perpendicular to said first direction;

said second sensor unit comprising at least one sensing element having an elongated shape and having a total anisotropy field in a second direction with said second direction being substantially perpendicular to said first direction;

said second sensor unit having an output related to magnetic field components in a direction substantially perpendicular to said second direction; and

said integrated device being independent of a biasing magnet.

2. The integrated device of claim 1 wherein said single substrate is a semiconductor substrate.

3. The integrated device of claim 1 further comprising means for setting a direction of magnetization in at least a portion of said first sensor unit and for setting a direction of magnetization in at least a portion of said second sensor unit.

4. The integrated device of claim 1 wherein said direction of magnetization set in said portion of said first sensor unit and said direction of magnetization set in said portion of said second sensor unit are substantially perpendicular.

5. The integrated device of claim 4 wherein said first sensor unit and said second sensor unit are formed in a common plane and said means for setting a direction of magnetization is a conductor located in a plane spaced from said common plane.

6. The integrated device of claim 5 further comprising biasing means selected to change an angle between a current in said bridge elements and a direction of magnetization in said bridge elements.

7. The integrated device of claim 6 wherein said biasing means comprises angled strips of a conductive material extending across at least a portion of said bridge elements.

8. The integrated device of claim 7 wherein said bridge elements are non perpendicular to said conductor and said angled strips form an angle about 45 degrees with said coil.

9. The integrated device of claim 7 wherein said bridge elements are perpendicular to said conductor.